IXBH 40N160. I C25 = 33 A V CES = 1600 V V CE(sat) = 6.2 V typ. t fi = 40 ns. Monolithic Bipolar MOS Transistor. N-Channel, Enhancement Mode TO-247 AD

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1 High Voltage BIMOSFET TM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode C 25 = 33 A S = V (sat) = 6.2 V typ. t fi = ns TO-247 AD G E G C E G = Gate, C = Collector, E = Emitter, TAB = Collector C (TAB) Symbol Conditions Maximum Ratings S to 1 C V V CGR to 1 C; R GE = 1 MΩ V S Continuous ± V M Transient ± V 25 T C 33 A 9 T C = 9 C A M T C, 1 ms A SSOA = 15 V, T VJ, R G = 22 Ω =.8 S M = A (RBSOA) Clamped inductive load, L = µh P C T C 3 W C M 1 C T stg C T L 1.6 mm (.63 in) from case for s C M d Mounting torque 1.15/Nm/lb.in. Weight 6 g Symbol Conditions Characteristic Values min. typ. max. BS = 1 ma, = V V (th) = 2 ma, = 4 8 V ES =.8 S µa = V 3 ma Features International standard package JEDEC TO-247 AD High Voltage BIMOSFET TM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective R DS(on) Monolithic construction - high blocking voltage capability - very fast turn-off characteristics MOS Gate turn-on - drive simplicity Intrinsic diode Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies CRT deflection Lamp ballasts Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density I GES = V, = ± V ± na (sat) = 9, = 15 V V 7.8 V 6 IXYS All rights reserved 1-4

2 Symbol Conditions Characteristic Values min. typ. max. C ies 3 pf C oes = 25 V, = V, f = 1 MHz 2 pf C res pf Q g = A, = V, = 15 V 1 nc t d(on) ns Inductive load, T t J ri ns t d(off) = 9, = 15 V, L = µh, 2 ns V t CE = 9 V, R G = 22 Ω fi ns R thjc.35 K/W R thck.25 K/W Reverse Conduction Characteristic Values Symbol Conditions min. typ. max. V F I F = 9, = V, Pulse test V t < µs, duty cycle d < 2% TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A B C D E F G H J K L M N IXYS All rights reserved 2-4

3 = 17V 15V 13V = 17V 15V 13V Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics = V I F V F Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction = V = A M 1 T J K < S IXBH N Q G - nanocoulombs.1 8 Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Based Safe Operating Area RBSOA 6 IXYS All rights reserved 3-4

4 t fi - nanoseconds = 9V = 15V R G = 22Ω t d(off) - nanoseconds = 9V = 15V = A Fig. 7 Typ. Fall Time R G - Ohms Fig. 8 Typ. Turn Off Delay Time 1.1 Z thjc - K/W.1.1 Single Pulse.1 IXBH Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance 6 IXYS All rights reserved 4-4

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