Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
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1 Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch no diode FEATURES NPT Generation V IGBT technology Square RBSOA Positive V CE(on) temperature coefficient Fully isolated package Speed 8 khz to 6 khz Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plug-in compatible with other SOT-7 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () T C = 5 C 9 C T C = 9 C 9 A Pulsed collector current I CM Clamped inductive load current I LM Gate to emitter voltage V GE ± V T C = 5 C 86 Power dissipation, IGBT P D T C = 9 C W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do exceed the maximum temperature of terminals ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa - - V GE = 5 V, I C = 75 A -..8 Collector to emitter voltage V CE(on) V GE = 5 V, I C = 75 A, T J = 5 C V V GE = 5 V, I C = 75 A, T J = 5 C V CE = V GE, I C = 5 μa 5 6 Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa, T J = 5 C -. - Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) mv/ C Collector to emitter leakage current I CES V GE = V, V CE = V, T J = 5 C -. V GE = V, V CE = V, T J = 5 C ma V GE = V, V CE = V μa Gate to emitter leakage current I GES V GE = ± V - - ± 5 na Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VS-GB9SAU SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g Gate to emitter charge (turn-on) Q ge I C = 5 A, V CC = 6 V, V GE = 5 V nc Gate to collector charge (turn-on) Q gc Turn-on switching loss -. - Turn-off switching loss E off -. - mj Total switching loss E tot I C = 75 A, V CC = 6 V, -. - Turn-on delay time t d(on) V GE = 5 V, R g = L = 5 μh, T J = 5 C Rise time t r Energy losses Turn-off delay time t d(off) include tail ns Fall time t f and diode Turn-on switching loss recovery Turn-off switching loss E Diode used off mj HFA6PB Total switching loss E tot I C = 75 A, V CC = 6 V, Turn-on delay time t d(on) V GE = 5 V, R g = Rise time t r L = 5 μh, T J = 5 C Turn-off delay time t d(off) ns Fall time t f - - Reverse bias safe operating area RBSOA T J = 5 C, I C = A, R g = V GE = 5 V to V, V CC = 9 V, V P = V, L = 5 μh Fullsquare THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg C Thermal resistance junction to case R thjc Thermal resistance case to heatsink R thcs Flat, greased surface C/W Weight - - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink - -. (.5) Nm (lbf.in) Case style SOT-7 Allowable Case Temperature ( C) DC I C - Collector-to-Emitter Current (A) 5 5 V GE = 5 V T J = 5 C T J = 5 C T J = 5 C I C - Continuous Collector Current (A) V CE - Collector-to-Emitter Voltage (V) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature Fig. - Typical Collector to Emitter Current Output Characteristics of IGBT Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VS-GB9SAU I C - Collector-to-Emitter Current (A) T J = 5 C 5 T J = 5 C V GE - Gate-to-Emitter Voltage (V) Fig. - Typical IGBT Transfer Characteristics V CE - Collector-to-Emitter Voltage (V) I C = A I C = 75 A I C = 5 A I C = 5 A T J - Junction Temperature ( C) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V I CES - Collector-to-Emitter Current (A) T J = 5 C T J = 5 C.. T. J = 5 C. 6 8 Switching Energy (mj) E off V CES - Collector-to-Emitter Voltage (V) I C - Collector Current (A) Fig. - Typical IGBT Zero Gate Voltage Collector Current Fig. 7 - Typical IGBT Energy Losses vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V, Diode used HFA6PB 6 V GE(th) Threshold Voltage (V) T J = 5 C T J = 5 C Switching Time (μs). t d(on) t r t d(off) t f I C (A). 6 8 I C - Collector Current (A) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical IGBT Switching Time vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V, Diode used HFA6PB Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VS-GB9SAU Energy Losses (mj) 8 6 E off Switching Time (µs) t f t r t d(on) t d(off) 5 R g (Ω) 5 R G (Ω) Fig. 9 - Typical IGBT Energy Loss vs. R g, T J = 5 C, I C = 75 A, L = 5 μh, V CC = 6 V, V GE = 5 V, Diode used HFA6PB Fig. - Typical IGBT Switching Time vs. R g T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V Z thjc - Thermal Impedance Junction to Case ( C/W) DC P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t..... Rectangular Pulse Duration (s) Fig. - Maximum Thermal Impedance Z thjc Characteristics (IGBT) I C (A) V CE (V) Fig. - IGBT Reverse Bias SOA, TJ = 5 C, V GE = 5 V Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VS-GB9SAU 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max.) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. a - Clamped Inductive Load Test Circuit Fig. b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L V R g D.U.T./ driver + - V CC Fig. a - Switching Loss Test Circuit 9 % % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E off E ts = ( + E off ) Fig. b - Switching Loss Waveforms Test Circuit Revision: -May-6 5 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VS-GB9SAU ORDERING INFORMATION TABLE Device code VS- G B 9 S A U product - Insulated Gate Bipolar Transistor (IGBT) - B = IGBT Generation 5 - Current rating (9 = 9 A) - Circuit configuration (S = Single switch without antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed/type (U = Ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING (C) Lead Assignment Single switch, no antiparallel diode S (G), (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: -May-6 6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø. (.6) Ø. (.69) 8. (.58) 7.8 (.88) -A- x M nuts.5 (.9). (.5) 6.5 (.6) 6.5 (.56) 5.7 (.).7 (.97) -B- 7.5 (.9) 7.6 (.99).5 (.) 9.8 (.7).9 (.587) 5. (.598) R full. (.8). (.87).5 (.). (.6) 8. (.7) x 7.7 (.).5 (.) M C A M B M. (.87).9 (.75). (.6).5 (.77) -C-. (.5). (.8).7 (.6) 5. (.98) 5.5 (.) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 95 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
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