L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

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1 MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania (7) Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit Diagram 5/5 P X Q Q OT F O F O C1 E G E1/C Dimensions Inches Millimeters A.±. 1.±1. B 1.97±.1 5.±.3 C 1.1 ±.3 1.±. D.33±.1 11.±.3 E.±..±1. F.3±. 59.±.5 G.9±. 119.±.5 H. 15. J.3 1. K L.. M. Dia. 5.5 Dia. N 1.±.3 3.±. R R S Z 1 G(L) F O (L) BB BB BB X T Y DETAIL "A" AA SIGNAL TERMINAL 3 E(L) V D 5 G(H) F O (H) 7 E(H) OPEN Dimensions Inches Millimeters P M M Q.79±.3.±. R 1.±.3.±. S 1.±.3 3.7±. T. Rad.. Rad. U.. V W.1±.3 1.5±. X / /+1. Y 1. -./ /+1. Z.1 Dia. 3. Dia. AA 1.±.3 5.±. BB..5 Description: Powerex s are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge confi guration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifi ed system assembly and thermal management. Features: Over-Current and Over-Temperature Protection Low V CE(sat) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG3QYSA is a 1V (V CES ), 3 Ampere Compact IGBT Series Module. Type Current Rating V CES Amperes Volts (x ) MG 3 1

2 Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania (7) MG3QYSA 3 Amperes/1 Volts Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol MG3QYSA Units Power Device Junction Temperature T j - to 15 C Storage Temperature T stg - to 15 C Operating Temperature Range T ope - ~ 1 C Mounting Torque, M5 Mounting Screws 31 in-lb Mounting Torque, M Main Terminal Screws in-lb Module Weight (Typical) 375 Grams Isolation Voltage, AC 1 minute, Hz Sinusoidal V ISO 5 Volts IGBT Inverter Sector Collector-Emitter Voltage V CES 1 Volts Gate-Emitter Voltage V GES ± Volts Collector Current (T C = 5 C) I C 3 Amperes Peak Collector Current (T C = 5 C) I CP Amperes Emitter Current (T C = 5 C) I E 3 Amperes Peak Emitter Current (T C = 5 C) I EM Amperes Collector Dissipation (T C = 5 C) P C Watts IGBT Control Sector Control Voltage (OT) V D Volts Fault Input Voltage VF O Volts Fault Input Current IF O ma Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Gate Leakage Current I GES V GE = ±V, V CE = V - / +3 ma V GE = 1V, V CE = V 1 na Collector-Emitter Cutoff Current I CES V CE = 1V, V GE = V 1. ma Gate-Emitter Cutoff Voltage V GE(off) V CE = 5V, I C = 3mA. 7.. Volts Collector-Emitter Saturation Voltage V CE(sat) V GE = 15V, I C = 3A,.. Volts V GE = 15V, I C = 3A, 3. Volts Input Capacitance C ies V CE = 1V, V GE = V, f = 1MHz 1, pf Inductive Load t d(on).1 1. µs Switching t off, I C = 3A,. µs Times t f,.5 µs Reverse Recovery Time t rr.5 µs Emitter-Collector Voltage V EC I E = 3A.1. Volts 5/5

3 Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania (7) MG3QYSA 3 Amperes/1 Volts Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Fault Output Current O C V GE = 15V 3 A Over-Temperature O T 1 15 C Fault Output Delay Time t d(fo), µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)q IGBT (Per 1/ Module). C/Watt R th(j-c)d FWDi (Per 1/ Module). C/Watt Contact Thermal Resistance R th(c-f).13 C/Watt Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across C1-E Terminals 75 Volts Gate Voltage V GE 1. ~ 17 Volts Gate Resistance R G. Ω Switching Frequency f C ~ khz 3 1 OUTPUT CHARACTERISTICS VOLTAGE, V CE(sat), (VOLTS) OUTPUT CHARACTERISTICS 15V V V GE = V V 1V GE = V 1V 1V 9V V 3 1 1V 9V V VOLTAGE, V CE(sat), (VOLTS) FORWARD CURRENT, I F, (AMPERES) 3 1 FREE-WHEEL DIODE CHARACTERISTICS V GE = V Tj = - C FORWARD VOLTAGE, V F, (VOLTS) SATURATION VOLTAGE, V CE(sat), (VOLTS) 1 1 SATURATION VOLTAGE CHARACTERISTICS I C = 3A I C = 15A I C = A SATURATION VOLTAGE, V CE(sat), (VOLTS) 1 1 SATURATION VOLTAGE CHARACTERISTICS I C = 3A I C = 15A I C = A SATURATION VOLTAGE, V CE(sat), (VOLTS) 1 1 SATURATION VOLTAGE CHARACTERISTICS T j = - C I C = 3A I C = 15A I C = A /5 3

4 Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania (7) MG3QYSA 3 Amperes/1 Volts TRANSFER CHARACTERISTICS V CE = 5V T j = - C SWITCHING TIME, t off, (µs) 1 TURN-OFF TIME VS SWITCHING TIME, t on, (µs) 1 TURN-ON TIME VS SWITCHING TIME, t d(off), (µs) 1 TURN-OFF DELAY TIME VS SWITCHING TIME, t d(on), (µs) 1 TURN-ON DELAY TIME VS SWITCHING TIME, t f, (µs) FALL TIME VS. SWITCHING TIME, t r, (µs) RISE TIME VS SWITCHING TIME, t off, (µs) 1 TURN-OFF TIME VS. I C = 3A , R G, (Ω) SWITCHING TIME, t on, (µs) 1 I C = 3A TURN-ON TIME VS , R G, (Ω) 5/5

5 Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania (7) MG3QYSA 3 Amperes/1 Volts TURN-OFF DELAY TIME VS. TURN-ON DELAY TIME VS. FALL TIME VS. SWITCHING TIME, t d(off), (µs) 1 I C = 3A SWITCHING TIME, t d(on), (µs) 1 I C = 3A SWITCHING TIME, t f, (µs) I C = 3A , R G, (Ω) , R G, (Ω) , R G, (Ω) RISE TIME VS. SWITCHING LOSS (OFF) VS. SWITCHING LOSS (ON) VS. SWITCHING TIME, t r, (µs) I C = 3A SWITCHING LOSS, E off, (mj/pulse) 1 1 SWITCHING LOSS, E on, (mj/pulse) , R G, (Ω) SWITCHING LOSS (OFF) VS. SWITCHING LOSS (ON) VS. REVERSE RECOVERY CURRENT SWITCHING LOSS, E off, (mj/pulse) , R G, (Ω) SWITCHING LOSS, E on, (mj/pulse) , R G, (Ω) REVERSE RECOVERY CURRENT, I rr, (AMPERES) EMITTER CURRENT, I E, (AMPERES) 5/5 5

6 Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania (7) MG3QYSA 3 Amperes/1 Volts REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY TIME EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY LOSS, E dsw, (mj/pulse) REVERSE RECOVERY LOSS VS. FORWARD CURRENT EMITTER CURRENT, I E, (AMPERES) CAPACITANCE, C ies, C oes, C res, (pf) CAPACITANCE VS. VOLTAGE C ies C oes C res V GE = V f = 1MHz T C = 5 C VOLTAGE, V CE, (VOLTS), I ic, (AMPERES) 1 1 REVERSE BIAS SAFE OPERATION AREA T j 15 C VOLTAGE, V CE, (VOLTS) VOLTAGE, V CE, (VOLTS) 1 VOLTAGE VS. GATE CHARGE I C = 3A R L = Ω T j = 5C GATE CHARGE, Q G, (nc) 1 1 V GATE-EMITTER VOLTAGE VS. GATE CHARGE I C = 3A R L = Ω T j = 5C V V V CE = V GATE CHARGE, Q G, (nc) 1 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 1 T C = 5 C T C = 5 C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) TRANSIENT IMPEDANCE, Rth (j-c) SINGLE PULSE STANDARD VALUE = R th(j-c) Q =. C/W TIME, (s) TRANSIENT IMPEDANCE, Rth (j-c) SINGLE PULSE STANDARD VALUE = R th(j-c) D =. C/W TIME, (s) 5/5