= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2

Transcription

1 G C E TYPICAL PERFORMANCE CURVES 12V APT1GN12B2 APT1GN12B2 APT1GN12B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive (ON) temperature coeffi cient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifi es gate drive design and minimizes losses. T-Max 12V Field Stop Trench Gate: Low (on) Easy Paralleling Integrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS G C E MAXIMUM RATINGS All Ratings: T C unless otherwise specifi ed. Symbol Parameter APT1GN12B2 UNIT S Collector-Emitter Voltage Gate-Emitter Voltage 12 ±3 Volts 1 Continuous Collector T C Continuous Collector T C = 11 C 8 1 Amps M Pulsed Collector Current 1 3 SSOA Switching Safe Operating = 15 C 12V P D Total Power Dissipation 96 Watts,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for 1 Sec. -55 to 15 3 C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = 4mA) 12 (TH) (ON) ES I GES (int) Gate Threshold Voltage ( =, = 4mA, T j ) Collector-Emitter On Voltage (, = 1A, T j ) Collector-Emitter On Voltage (, = 1A, T j ) Collector Cut-off Current ( = 12V, = V, T j ) 2 Collector Cut-off Current ( = 12V, = V, T j ) 2 Gate-Emitter Leakage Current ( = ±2V) Integrated Gate Resistor TBD 6 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Volts µa na Ω Rev A 12-27

2 DYNAMIC CHARACTERISTICS Symbol Characteristic C ies C oes C res P Q g Q ge Q gc SSOA Switching Safe Operating Area t d(on) t r t d(off) t f E on1 E on2 E off t d(on) t r t d(off) t f E on1 E on2 E off Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 Test Conditions Capacitance = V, = 25V f = 1 MHz Gate Charge = 6V = 1A = 15 C, = 4.3Ω 7, = 15V, L = 1µH, = 12V Inductive Switching (25 C) V CC = 8V = 1A = 1.Ω 7 = +25 C Inductive Switching (125 C) V CC = 8V = 1A = 1.Ω 7 = +125 C APT1GN12B2 MIN TYP MAX UNIT pf V 54 5 nc A ns mj ns mj 14 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R θjc R θjc W T Junction to Case (IGBT) Junction to Case (DIODE) Package Weight N/A C/W gm Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-75 Method E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 is external gate resistance, not including (int) nor gate driver impedance. (MIC4452) 8 Continuous Current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein.

3 TYPICAL PERFORMANCE CURVES V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V) (NORMALIZED) , COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics( ) FIGURE 2, Output Characteristics ( ) µs PULSE TEST<.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge = -55 C = 175 C = -55 C = 5A = 15 C. 25µs PULSE TEST <.5 % DUTY CYCLE = 1A = 2A, DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V) = 1A 15V 13V 11V = 6V 9V 8V 7V APT1GN12B µs PULSE TEST <.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature 12V 1V = 24V = 2A = 1A = 5A = 96V Lead Temperature Limited , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature Rev A 12-27

4 Rev A SWITCHING ENERGY LOSSES (µj) E ON2, TURN ON ENERGY LOSS (µj) t r, RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) SWITCHING ENERGY LOSSES (µj) E OFF, TURN OFF ENERGY LOSS (µj) t f, FALL TIME (ns) t d (OFF), TURN-OFF DELAY TIME (ns) =15V, =125 C =15V, =25 C APT1GN12B2 1 = 8V 2 T = 8V J, or 125 C R = 1.Ω G = 1.Ω L = 1µH L = 1µH E E FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 1, Turn-Off Delay Time vs Collector Current = 25 or 125 C, = 1.Ω, L = 1µH, = 8V E E FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current 8, 6, 4, 2, E E FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current 1, 8, 6, 4, 2, = 1.Ω, L = 1µH, = 8V = 8V = 1.Ω = 8V 2A 1A 2A 1A 5A E off, 5A E off, 5A , GATE RESISTANCE (OHMS), JUNCTION TEMPERATURE ( C) FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature , 25, 2, 15, 1, 5 8, 6, 4, 2, = 8V = 1.Ω = 8V = 1.Ω 2A 1A,, 2A 5A 1A

5 TYPICAL PERFORMANCE CURVES 1, 35 APT1GN12B2 C, CAPACITANCE ( P F) 5, 1, 5 C ies C oes C res , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area.14 Z θjc, THERMAL IMPEDANCE ( C/W) D = Note: t SINGLE PULSE t Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration P DM 5 Dissipated Power (Watts) ( C) T C ( C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Rev A Z EXT F MAX, OPERATING FREQUENCY (khz) T C = 75 C D = 5 % = 8V = 1.Ω Figure 2, Operating Frequency vs Collector Current F max = min (f max, f max2 ).5 f max1 = t d(on) + t r + t d(off) + t f f max2 = P diss = P diss - P cond E on2 + E off - T C R θjc

6 APT1GN12B2 APT1DQ12 1% Gate Voltage t d(on) V CC t r 9% Collector Current 5% 1% 5% D.U.T. A Switching Energy Collector Voltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 9% Gate Voltage t d(off) 9% Collector Voltage t f 1% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 4.69 (.185) 5.31 (.29) 1.49 (.59) 2.49 (.98) T-MAX (B2) Package Outline e1 SAC: Tin, Silver, Copper (.61) (.64) 5.38 (.212) 6.2 (.244) Collector 2.8 (.819) (.845) 4.5 (.177) Max (.113) 3.12 (.123) Rev A (.16).79 (.31) (.78) 2.32 (.8) 1.1 (.4) 1.4 (.55) 2.21 (.87) 2.59 (.12) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi s products are covered by one or more of U.S.patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,53,786 5,256,583 4,748,13 5,283,22 5,231,474 5,434,95 5,528,58 and foreign patents. US and Foreign patents pending. All Rights Reserved (.65) 2.13 (.84) Gate Collector Emitter