HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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1 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Data Sheet December 21 6V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTGN6AD, HGTPN6AD and HGT1SN6ADS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 o C and 15 o C. The IGBT used is the development type TA9335. The diode used in anti-parallel is the development type TA9371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA9337. Ordering Information PART NUMBER PACKAGE BRAND HGTGN6AD TO-27 N6AD HGTPN6AD TO-22AB N6AD Features >1kHz Operation V, A 2kHz Operation V, 9A 6V Switching SOA Capability Typical Fall Time ns at T J = 5 o C Low Conduction Loss Temperature Compensating SABER Model Related Literature - TB33 Guidelines for Soldering Surface Mount Components to PC Boards Packaging COLLECTOR (FLANGE) JEDEC TO-22AB ALTERNATE VERSION E G C HGT1SN6ADS TO-263AB N6AD NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1SN6ADS9A. Symbol C G E JEDEC TO-263AB JEDEC STYLE TO-27 COLLECTOR (FLANGE) G E C G E COLLECTOR (FLANGE) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS,36,73,17,35,3,792,3,931,66,176,5,13,532,53,57,713,59,61,65,9,62,211,631,56,639,75,639,762,61,2,6,637,62,195,6,13,69,313,717,679,73,952,73,69,79,32,1,96,3,533,9,5,9,7,1,665,23,176,37,66,6,,3,767,,627,9,13,91,7,9,69,933,7,963,951,969,27 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
2 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified HGTGN6AD, HGTPN6AD, HGT1SN6ADS UNITS Collector to Emitter Voltage BV CES 6 V Collector Current Continuous At T C = 25 o C I C25 5 A At T C = 11 o C I C11 23 A Collector Current Pulsed (Note 1) I CM 96 A Gate to Emitter Voltage Continuous V GES ±2 V Gate to Emitter Voltage Pulsed V GEM ±3 V Switching Safe Operating Area at T J = 15 o C, Figure SSOA 6A at 6V Power Dissipation Total at T C = 25 o C P D 7 W Power Dissipation Derating T C > 25 o C W/ o C Operating and Storage Junction Temperature Range T J, T STG -55 to 15 o C Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for 1s T L 3 Package Body for 1s, see Tech Brief T pkg 26 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications T J = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = 25µA, V GE = V V Collector to Emitter Leakage Current I CES V CE = 6V T J = 25 o C µa T J = 5 o C ma Collector to Emitter Saturation Voltage V CE(SAT) I C = A, T J = 25 o C V V GE = 15V T J = 5 o C V Gate to Emitter Threshold Voltage V GE(TH) I C = 25µA, V CE = 6V V Gate to Emitter Leakage Current I GES V GE = ±2V - - ±25 na Switching SOA SSOA T J = 15 o C, R G = 1Ω, V GE = 15V, L = 1µH, V CE = 6V A Gate to Emitter Plateau Voltage V GEP I C = A, V CE = 3V - - V On-State Gate Charge Q g(on) I C = A, V GE = 15V nc V CE = 3V V GE = 2V - 97 nc Current Turn-On Delay Time t d(on)i IGBT and Diode at T J = 25 o C, ns Current Rise Time t ri I CE = A, V CE = 39V, - - ns Current Turn-Off Delay Time t d(off)i V GE = 15V, ns Current Fall Time t fi R G = 1Ω, ns Turn-On Energy (Note 3) E ON1 L = 5µH, Test Circuit (Figure 2) µj Turn-On Energy (Note 3) E ON2 - - µj Turn-Off Energy (Note 2) E OFF µj Current Turn-On Delay Time t d(on)i IGBT and Diode at T J = 5 o C, ns Current Rise Time t ri I CE = A, V CE = 39V, V GE = 15V, - - ns Current Turn-Off Delay Time t d(off)i R G = 1Ω, ns Current Fall Time t fi L = 5µH, ns Turn-On Energy (Note3) E ON1 Test Circuit (Figure 2) µj Turn-On Energy (Note 3) E ON µj Turn-Off Energy (Note 2) E OFF µj o C o C 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
3 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Electrical Specifications T J = 25 o C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Diode Forward Voltage V EC I EC = A V Diode Reverse Recovery Time t rr I EC = A, di EC /dt = 2A/µs ns I EC = 1A, di EC /dt = 2A/µs ns Thermal Resistance Junction To Case R θjc IGBT o C/W Diode o C/W NOTES: 2. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = A). All devices were tested per JEDEC Standard No. 2-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in Figure 2. Typical Performance Curves Unless Otherwise Specified I CE, DC COLLECTOR CURRENT (A) 6 V GE = 15V, T C, CASE TEMPERATURE ( o C) 7 T J = 15 o C, R G = 1Ω, V GE = 15V, L = 2µH FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA f MAX, OPERATING FREQUENCY (khz) f MAX1 =.5 / (t d(off)i + t d(on)i ) f MAX2 = (P D - P C ) / (E ON2 + E OFF ) P C = CONDUCTION DISSIPATION (DUTY FACTOR = 5%) R ØJC =.75 o C/W, SEE NOTES T J = 5 o C, R G = 1Ω, L = 5µH, V CE = 39V 3 T C 75 o C 1 2 V GE 15V 3 t SC, SHORT CIRCUIT WITHSTAND TIME (µs) V CE = 39V, R G = 1Ω, T J = 5 o C I SC t SC I SC, PEAK SHORT CIRCUIT CURRENT (A) V GE, GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO FIGURE. SHORT CIRCUIT WITHSTAND TIME 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
4 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Typical Performance Curves Unless Otherwise Specified (Continued) 2 2 DUTY CYCLE <.5%, V GE = V PULSE DURATION = 25µs.5 1. T J = 5 o C T J = 15 o C T J = 25 o C DUTY CYCLE <.5%, V GE = 15V PULSE DURATION = 25µs T J = 5 o C T J = 15 o C T J = 25 o C FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE E ON2, TURN-ON ENERGY LOSS (µj) R G = 1Ω, L = 5µH, V CE = 39V T J = 5 o C, V GE = V, V GE = 15V T J = 25 o C, V GE = V, V GE = 15V E OFF, TURN-OFF ENERGY LOSS (µj) R G = 1Ω, L = 5µH, V CE = 39V T J = 5 o C, V GE = V OR 15V T J = 25 o C, V GE = V OR 15V FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE. TURN-OFF ENERGY LOSS vs COLLECTOR TO t d(on)i, TURN-ON DELAY TIME (ns) R G = 1Ω, L = 5µH, V CE = 39V T J = 25 o C, T J = 5 o C, V GE = V T J = 25 o C, T J = 5 o C, V GE = 15V t ri,rise TIME(ns) R G = 1Ω, L = 5µH, V CE = 39V T J = 5 o C OR T J = 25 o C, V GE = V T J = 25 o C OR T J = 5 o C, V GE = 15V FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 1. TURN-ON RISE TIME vs COLLECTOR TO 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
5 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Typical Performance Curves Unless Otherwise Specified (Continued) t d(off)i, TURN-OFF DELAY TIME (ns) 115 R G = 1Ω, L = 5µH, V CE = 39V 11 V GE = V, V GE = 15V, T J = 5 o C V GE = V, V GE = 15V, T J = 25 o C t fi, FALL TIME (ns) 9 R G = 1Ω, L = 5µH, V CE = 39V 7 T J = 5 o C, V GE = V OR 15V T J = 25 o C, V GE = V OR 15V FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <.5%, V CE = 1V PULSE DURATION = 25µs T J = -55 o C T J = 25 o C T J = 5 o C V GE, GATE TO EMITTER VOLTAGE (V) V GE, GATE TO EMITTER VOLTAGE (V) I G(REF) = 1mA, R L = 25Ω, T C = 25 o C V CE = 6V V CE = 2V V CE = V Q G, GATE CHARGE (nc) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 1. GATE CHARGE WAVEFORMS E TOTAL, TOTAL SWITCHING ENERGY LOSS (mj) R G = 1Ω, L = 5µH, V CE = 39V, V GE = 15V E TOTAL = E ON2 + E OFF I CE = 2A I CE = A I CE = 6A T C, CASE TEMPERATURE ( o C) E TOTAL, TOTAL SWITCHING ENERGY LOSS (mj) 1 1 T J = 5 o C, L = 5µH, V CE = 39V, V GE = 15V E TOTAL = E ON2 + E OFF I CE = 2A I CE = A I CE = 6A R G, GATE RESISTANCE (Ω) 1 FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE. TOTAL SWITCHING LOSS vs GATE RESISTANCE 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
6 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Typical Performance Curves Unless Otherwise Specified (Continued) C, CAPACITANCE (nf) 3. FREQUENCY = 1MHz C IES C OES.5 C RES DUTY CYCLE <.5%, V GE = 15V PULSE DURATION = 25µs, T J = 25 o C I CE = 1A I CE = A I CE = 6A V GE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 1. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE I EC, FORWARD CURRENT (A) DUTY CYCLE <.5%, PULSE DURATION = 25µs 5 o C 25 o C t rr, RECOVERY TIMES (ns) 9 di EC /dt = 2A/µs 7 5 o C t rr 6 5 o C t b 5 5 o C 3 a 2 25 o C t rr 25 o C t a 1 25 o C t b V EC, FORWARD VOLTAGE (V) I EC, FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 2. RECOVERY TIMES vs FORWARD CURRENT t rr, RECOVERY TIMES (ns) 65 6 I EC = A, V CE = 39V 55 5 o C t b o C t a o C t a 1 25 o C t b Q rr, REVERSE RECOVERY CHARGE (nc) V CE = 39V 35 5 o C I EC = A 3 5 o C I EC = 6A o C I EC = A o C I EC = 6A di EC /dt, RATE OF CHANGE OF CURRENT (A/µs) di EC /dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
7 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Typical Performance Curves Unless Otherwise Specified (Continued) Z θjc, NORMALIZED THERMAL RESPONSE t.1 1 P.5 D t DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z θjc X R θjc ) + T C SINGLE PULSE t 1, RECTANGULAR PULSE DURATION (s) Test Circuit and Waveforms FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE HGTPN6AD DIODE TA9371 9% V GE 1% E ON2 L = 5µH E OFF V CE R G = 1Ω DUT 9% + - V DD = 39V I CE 1% t d(off)i t fi tri t d(on)i FIGURE 2. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
8 HGTGN6AD, HGTPN6AD, HGT1SN6ADS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded.. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures 5, 6, 7,, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or f MAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by f MAX1 =.5/(t d(off)i + t d(on)i ). Deadtime (the denominator) has been arbitrarily held to 1% of the on-state time for a 5% duty factor. Other definitions are possible. t d(off)i and t d(on)i are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. t d(off)i is important when controlling output ripple under a lightly loaded condition. f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON2 ). The allowable dissipation (P D ) is defined by P D =(T JM -T C )/R θjc. The sum of device switching and conduction losses must not exceed P D. A 5% duty factor was used (Figure 3) and the conduction losses (P C ) are approximated by P C =(V CE xi CE )/2. E ON2 and E OFF are defined in the switching waveforms shown in Figure 25. E ON2 is the integral of the instantaneous power loss (I CE x V CE ) during turn-on and E OFF is the integral of the instantaneous power loss (I CE xv CE ) during turn-off. All tail losses are included in the calculation for E OFF ; i.e., the collector current equals zero (I CE = ). 21 Fairchild Semiconductor Corporation HGTGN6AD, HGTPN6AD, HGT1SN6ADS Rev. B
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