APT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

Size: px
Start display at page:

Download "APT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE"

Transcription

1 APTDQ6BHB APTDQ6BHB(G) 6V XA *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS TO-47 Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters -Inverters Snubber Diode PFC RoHS Compliant Ultrafast Recovery Times Soft Recovery Characteristics Popular TO-47 Package or Surface Mount D PAK Package Low Forward Voltage Low Leakage Current Avalanche Energy Rated Low Losses Low Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Deity - Cathode - Anode Cathode - Anode MAXIMUM RATINGS All Ratings per diode: T C = C unless otherwise specifi ed. Characteristic / Test Conditio APTDQ6BHB(G) Maximum D.C. Reverse Voltage RM Maximum Peak Repetitive Reverse Voltage 6 Volts WM Maximum Working Peak Reverse Voltage (AV) Maximum Average Forward Current (T C = 67 C, Duty Cycle =.) (RMS) RMS Forward Current (Square wave, % duty) SM Non-Repetitive Forward Surge Current ( = 4 C, 8.ms) E AVL Avalanche Energy (A, 4mH) mj,t STG T L Operating and StorageTemperature Range Lead Temperature for Sec. - to 7 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio = A..4 V F Forward Voltage = 6A.4 Volts = A,.7 I RM C T Maximum Reverse Leakage Current Junction Capacitance, = V = 6V = 6V, 6 μa pf -6 Rev A -9

2 DYNAMIC CHARACTERISTICS APTDQ6BHB(G) Characteristic Test Conditio = A, di F /dt = -A/μs, = V, = C - - = A, di F /dt = -A/μs = 4V, T C = C = A, di F /dt = -A/μs = 4V, T C = A, di F /dt = -A/μs = 4V, T C THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditio R θjc Junction-to-Case Thermal Resistance. C/W W T Package Weight..9 oz g Torque Maximum Mounting Torque. lb in N m Microsemi reserves the right to change, without notice, the specificatio and information contained herein..6 Z θjc, THERMAL IMPEDANCE ( C/W) RECTANGULAR PULSE DURATION (seconds) FIGURE a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM t t Duty Factor D = t /t Peak = P DM x Z θjc + T C ( C) T C ( C) -6 Rev A -9 Dissipated Power (Watts) Z EXT FIGURE b, TRANSIENT THERMAL IMPEDANCE MODEL Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.

3 TYPICAL PERFORMANCE CURVES APTDQ6BHB(G), FORWARD CURRENT (A) = C = C = C, COLLECTOR CURRENT (A) A A 6A = 4V, REVERSE RECOVERY CHARGE () V F, ANODE-TO-CATHODE VOLTAGE (V) FIGURE, Forward Current vs. Forward Voltage 4 T J V = 4 6A A A FIGURE 4, vs. Current Rate of Change FIGURE, vs. Current Rate of Change, REVERSE RECOVERY CURRENT (A) = 4V A 6A A FIGURE, Reverse Recovery Current vs. Current Rate of Change 6 K f, DYNAMIC PARAMETERS (Normalized to A/μs) t RR Q RR 7, JUNCTION TEMPERATURE ( C) FIGURE 6, Dynamic Parameters vs Junction Temperature (AV) (A) 4 Duty cycle =. = 4 C 7 7 Case Temperature ( C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature C J, JUNCTION CAPACITANCE (pf) 6 8 4, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage -6 Rev A -9

4 V r APTDQ6BHB(G) +8V di F /dt Adjust APTGT6BR V D.U.T. μh / Waveform PEARSON 878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 4 - Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. -. Zero -, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through and. passes through zero Area Under the Curve Defined by and. Figure, Diode Reverse Recovery Waveform and Definitio TO-47 Package Outline e SAC: Tin, Silver, Copper 4.69 (.8). (.9).49 (.9).49 (.98).49 (.6) 6.6 (.64) 6. (.4) BSC.8 (.) 6. (.44) Anode / Cathode.8 (.89).46 (.84) 4. (.77) Max.. (.4).8 (.).87 (.). (.).4 (.6).79 (.) 9.8 (.78). (.8). (.4).4 (.).6 (.6). (.84) Cathode Anode / Cathode Anode -6 Rev A -9. (.87).9 (.).4 (.) BSC -Plcs. Dimeio in Millimeters and (Inches)

5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: APTDQ6BHBG

1200V 60A APT60D120B APT60D120S APT60D120BG* APT60D120SG* ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT BENEFITS

1200V 60A APT60D120B APT60D120S APT60D120BG* APT60D120SG* ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT BENEFITS V 6A APT6DB APT6DS APT6DBG* APT6DSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters

More information

Low Losses. Soft Recovery Characteristics. = 130 C, Duty Cycle = 0.5) Amps I FSM. = 45 C, 8.3ms) I F = 15A = 30A = 15A, T J = 125 C V R = V R

Low Losses. Soft Recovery Characteristics. = 130 C, Duty Cycle = 0.5) Amps I FSM. = 45 C, 8.3ms) I F = 15A = 30A = 15A, T J = 125 C V R = V R V A APTDB APTDBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS TO-47 Anti-Parallel Diode -Switchmode

More information

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE Anti-Parallel APTX6DJ Parallel APTX6DJ ISOTOP SOT-7 "UL Recognized" APTX6DJ V 6A APTX6DJ V 6A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode

More information

Low Losses. Soft Recovery Characteristics. = 126 C, Duty Cycle = 0.5) Amps I FSM. = 45 C, 8.3ms) I F = 60A = 120A = 60A, T J = 125 C V R = V R

Low Losses. Soft Recovery Characteristics. = 126 C, Duty Cycle = 0.5) Amps I FSM. = 45 C, 8.3ms) I F = 60A = 120A = 60A, T J = 125 C V R = V R V 6A APT6DB APT6DS APT6DBG* APT6DSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters

More information

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies,

More information

= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V) V APT3GP1BDQ APT3GP1BDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers

More information

= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V) V The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior

More information

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40 APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off

More information

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar

More information

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APTGRBD APTGRB_SD APTGRSD V, A, V ce(on) =.V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness

More information

APT50GT120B2R(G) APT50GT120LR(G)

APT50GT120B2R(G) APT50GT120LR(G) APT5GT12B2R(G) APT5GT12LR(G) 12V, 5A, (ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT

More information

600V APT75GN60B APT75GN60BG*

600V APT75GN60B APT75GN60BG* G C E TYPICAL PERFORMANCE CURVES APT75GNB(G) V APT75GNB APT75GNBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

More information

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. V A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultrafast Recovery

More information

MOSFET = 0V, I D. Volts R DS(on) (V GS = 10V, 17.5A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = 0V) = ±30V, V DS. = 1mA)

MOSFET = 0V, I D. Volts R DS(on) (V GS = 10V, 17.5A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = 0V) = ±30V, V DS. = 1mA) APT14BLL(G) APT14SLL(G) V A.14 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D APTM35JVFR V A.35Ω POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APT8GR12JD 12V, 8A, V ce(on) = 2.V Typical Features Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and

More information

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 G C E TYPICAL PERFORMANCE CURVES 12V APT1GN12B2 APT1GN12B2 APT1GN12B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have

More information

APT34N80B2C3G APT34N80LC3G

APT34N80B2C3G APT34N80LC3G APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate

More information

APT1003RBLL APT1003RSLL

APT1003RBLL APT1003RSLL APT3RBLL APT3RSLL V A 3.Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with

More information

Watts P D Linear Derating Factor W/ C T J = 0V, I D. (ON) Max, V GS = 12V, 24.5A) = 600v, V GS = 0V) = 480V, V GS = 0V, T C = ±30V, V DS = 0V)

Watts P D Linear Derating Factor W/ C T J = 0V, I D. (ON) Max, V GS = 12V, 24.5A) = 600v, V GS = 0V) = 480V, V GS = 0V, T C = ±30V, V DS = 0V) APL62B2(G) APL62L(G) 6V A.125Ω LINEAR MOSFET B2 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions

More information

Super Junction MOSFET

Super Junction MOSFET 6V 6A.45Ω APT6N6BCS* APT6N6SCS* * Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Po wer Se miconductors Super Junction MOSFET (B) TO-247 D 3 PAK Ultra Low R DS(ON) Low Miller Capacitance Ultra

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

APT8052BLL APT8052SLL

APT8052BLL APT8052SLL APT82BLL APT82SLL 8V A.2Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly

More information

Watts T J,T STG. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Watts T J,T STG. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT6GT6BR_SR APT6GT6SR 6V Thunderbolt IGBT (B) TO-47 D 3 PAK The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior

More information

Absolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode.

Absolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode. 5ETH6 5ETH6S 5ETH6- Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Single Die Center Tap Module t rr = ns typ.

More information

APT30M30B2FLL APT30M30LFLL

APT30M30B2FLL APT30M30LFLL POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering

More information

Thunderbolt IGBT G E

Thunderbolt IGBT G E TYPICAL PERFORMANCE CURVES 6V APT1GT6JR APT1GT6JR The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness

More information

8ETU04PbF. Ultrafast Rectifier. Case Styles. t rr = 60ns I F(AV) = 8Amp V R = 400V. Bulletin PD rev. A 10/06. Features

8ETU04PbF. Ultrafast Rectifier. Case Styles. t rr = 60ns I F(AV) = 8Amp V R = 400V. Bulletin PD rev. A 10/06. Features 8ETU04PbF Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Lead-Free ("PbF" data sheet) t rr = 60ns I F(AV) = 8Amp V

More information

Ultrafast Rectifier, 20 A FRED Pt

Ultrafast Rectifier, 20 A FRED Pt Ultrafast Rectifier, 20 A FRED Pt 2 2L TO-220 FULL-PAK Cathode PRODUCT SUMMARY 2 Anode Package 2L TO-220FP I F(AV) 20 A V R 600 V V F at I F.26 V t rr (typ.) 6 ns T J max. 75 C Diode variation Single die

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Vishay Semiconductor/Diodes Division For any questions, you can email

More information

Hyperfast Rectifier, 15 A FRED Pt TM

Hyperfast Rectifier, 15 A FRED Pt TM 5ETX6PbF Base cathode 2 5ETX6FPPbF FEATURES Benchmark ultralow forward voltage drop Hyperfast recovery time Low leakage current 75 C operating junction temperature Fully isolated package (V INS = 25 V

More information

Hyperfast Rectifier, 8 A FRED Pt TM

Hyperfast Rectifier, 8 A FRED Pt TM Base cathode 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial level

More information

Hyperfast Rectifier, 15 A FRED Pt TM

Hyperfast Rectifier, 15 A FRED Pt TM 15ETH6S Base cathode 2 15ETH6-1 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Single die center tap module Designed and qualified

More information

MOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)

MOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA) V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by

More information

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA) APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement

More information

Ultrafast Rectifier, 30 A FRED Pt TM

Ultrafast Rectifier, 30 A FRED Pt TM Base common cathode 2 FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 75 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power

More information

Hyper Fast Rectifier, 2 x 4 A FRED Pt

Hyper Fast Rectifier, 2 x 4 A FRED Pt Hyper Fast Rectifier, 2 x 4 A FRED Pt VS-8CVH0HM3 2 3 SlimDPAK (TO-252AE) Base common cathode 4 2 Common cathode 3 Anode Anode PRODUCT SUMMARY Package SlimDPAK (TO-252AE) I F(AV) 2 x 4 A V R V V F at I

More information

APT5010B2FLL APT5010LFLL 500V 46A 0.100

APT5010B2FLL APT5010LFLL 500V 46A 0.100 POWER MOS 7 R FREDFET APT51B2FLL APT51LFLL 5V 46A.1 B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed

More information

MOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA)

MOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA) APT82JLL 8V A.2Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Ultrafast Soft Recovery Diode, 60 A FRED Pt 60EPU04PbF Cathode to base PRODUCT SUMMARY t rr (AV) 2 1 3 Cathode Anode TO247AC modified 60APU04PbF Cathode to base 2 1 3 Anode Anode TO-247AC 50 ns 60 A 400 V FEATURES Ultrafast recovery 175 C operating

More information

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt TM

Ultrafast Soft Recovery Diode, 60 A FRED Pt TM Vishay High Power Products 60EPU04 Ultrafast Soft Recovery Diode, 60APU04 FEATURES Ultrafast recovery Cathode to base PRODUCT SUMMARY t rr (typical) (AV) 2 1 3 Cathode Anode TO-247AC modified Cathode to

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Ultrafast Soft Recovery Diode, 60 A FRED Pt 60EPU06PbF 60APU06PbF FEATURES Ultrafast recovery 175 C operating junction temperature Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level Cathode to base 2 1 3 Cathode Anode

More information

HCD80R650E 800V N-Channel Super Junction MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HEXFRED Ultrafast Soft Recovery Diode, 15 A

HEXFRED Ultrafast Soft Recovery Diode, 15 A Vishay High Power Products TO-247AC modified HEXFRED Base common cathode 2 1 3 Cathode Anode FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions

More information

Insulated Hyperfast Rectifier Module, 280 A

Insulated Hyperfast Rectifier Module, 280 A Insulated Hyperfast Rectifier Module, 28 A FEATURES PRIMARY CHARACTERISTICS V R 3 V I F(AV) per module at T C = 8 C 28 A t rr 58 ns Type Modules - Diode FRED Pt Package SOT-227 Circuit configuration SOT-227

More information

HFB50HC20. Ultrafast, Soft Recovery Diode FRED. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 50A

HFB50HC20. Ultrafast, Soft Recovery Diode FRED. Features. Description. Absolute Maximum Ratings.  1 PD A V R = 200V I F(AV) = 50A PD - 94308A FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic V R = 200V I F(AV) = 50A t rr = 35ns Description

More information

Insulated Ultrafast Rectifier Module, 120 A

Insulated Ultrafast Rectifier Module, 120 A SOT-227 PRODUCT SUMMARY V R I F(AV) at T C = 65 C t rr 400 V 120 A 35 ns FEATURES Two fully independent diodes Ceramic fully insulated package (V ISOL = 2500 V AC ) Ultrafast reverse recovery Ultrasoft

More information

HEXFRED Ultrafast Soft Recovery Diode, 6 A

HEXFRED Ultrafast Soft Recovery Diode, 6 A N/C Base cathode + 2 PRODUCT SUMMARY V R 200 V V F at 6 A at 25 C 3.0 V (AV) 6 A t rr (typical) 26 ns (maximum) 50 C Q rr (typical) 6 nc di (rec)m /dt (typical) at 25 C 0 A/µs I RRM (typical) 4.4 A D 2

More information

Hyperfast Rectifier, 2 A FRED Pt

Hyperfast Rectifier, 2 A FRED Pt Hyperfast Rectifier, 2 A FRED Pt VS-2EJH02HM3 Top View SlimSMA (DO-22AC) Cathode esmp Series DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I

More information

Ultrafast Rectifier, 2 x 30 A FRED Pt

Ultrafast Rectifier, 2 x 30 A FRED Pt Ultrafast Rectifier, x 3 A FRED Pt 3 TO-47 long lead 3-pins PRODUCT SUMMARY Anode Base common cathode Common cathode Package TO-47 long lead 3-pins I F(AV) x 3 A V R 6 V V F at I F.75 V t rr typ. 6 ns

More information

Ultrafast Rectifier, 16 A FRED Pt

Ultrafast Rectifier, 16 A FRED Pt Ultrafast Rectifier, 6 A FRED Pt 2 K Top View Bottom View K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature For PFC CRM,

More information

Insulated Ultrafast Rectifier Module, 200 A

Insulated Ultrafast Rectifier Module, 200 A PRODUCT SUMMARY V R I (1) F(AV) at T C = 87 C per module t rr SOT-227 4 V 2 A 6 ns Note (1) Maximum I RMS current admitted A to do not exceed the maximum termperature of terminals FEATURES Two fully independent

More information

HEXFRED Ultrafast Soft Recovery Diode, 275 A

HEXFRED Ultrafast Soft Recovery Diode, 275 A HEXFRED Ultrafast Soft Recovery Diode, 275 A VS-HFA135NH4PbF HALF-PAK (D-67) Lug terminal anode Base cathode PRIMARY CHARACTERISTICS I F (maximum) 275 A V R 4 V I F(DC) at T C 138 A at C Package HALF-PAK

More information

Ultrafast Rectifier, 2 x 8 A FRED Pt

Ultrafast Rectifier, 2 x 8 A FRED Pt Ultrafast Rectifier, 2 x 8 A FRED Pt 2 esmp Series K Top View Bottom View SMPD (TO-263AC) K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating

More information

RURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V

RURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General

More information

Sonic Fast Recovery Diode

Sonic Fast Recovery Diode DH2x6-18A Sonic Fast Recovery Diode RRM = 18 I FA = 2x 6 A t = 23 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DH2x6-18A Backside: Isolated 2 1 3

More information

Hyperfast Rectifier, 30 A FRED Pt

Hyperfast Rectifier, 30 A FRED Pt VS-3ETH6FP-F3, VS-3ETH6FP-N3 Hyperfast Rectifier, 3 A FRED Pt FEATURES 2 TO-22 FullPAK 3 Cathode Base cathode 2 3 Anode Reduced Q rr and soft recovery 75 C T J maximum For PFC CRM/CCM operation Fully isolated

More information

FDP8D5N10C / FDPF8D5N10C/D

FDP8D5N10C / FDPF8D5N10C/D FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Insulated Ultrafast Rectifier Module, 210 A

Insulated Ultrafast Rectifier Module, 210 A Insulated Ultrafast Rectifier Module, 2 A SOT-227 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.

More information

Hyperfast Rectifier, 3 A FRED Pt

Hyperfast Rectifier, 3 A FRED Pt Hyperfast Rectifier, 3 A FRED Pt VS-3EJH0HM3 Top View SlimSMA (DO-22AC) Cathode esmp Series DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV)

More information

HFI50N06A / HFW50N06A 60V N-Channel MOSFET

HFI50N06A / HFW50N06A 60V N-Channel MOSFET HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche

More information

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Ultrafast Soft Recovery Diode, 150 A FRED Pt Ultrafast Soft Recovery Diode, 50 A FRED Pt PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only AEC-Q0 qualified PowerTab package Material

More information

Hyperfast Rectifier, 4 A FRED Pt

Hyperfast Rectifier, 4 A FRED Pt Hyperfast Rectifier, 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output

More information

Hyper Fast Rectifier, 2 x 4 A FRED Pt

Hyper Fast Rectifier, 2 x 4 A FRED Pt Hyper Fast Rectifier, 2 x 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified

More information

Insulated Ultrafast Rectifier Module, 280 A

Insulated Ultrafast Rectifier Module, 280 A Insulated Ultrafast Rectifier Module, 280 A SOT-227 PRIMARY CHARACTERISTICS V R 200 V I F(AV) per module at T C = C 280 A t rr 45 ns Type Modules - diode FRED Pt Package SOT-227 FEATURES Two fully independent

More information

Hyperfast Rectifier, 6 A FRED Pt

Hyperfast Rectifier, 6 A FRED Pt Hyperfast Rectifier, 6 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output

More information

Sonic Fast Recovery Diode

Sonic Fast Recovery Diode Sonic Fast ecovery Diode 1800 M I FA t rr 300 ns High Performance Fast ecovery Diode Low Loss and Soft ecovery Single Diode Part number Backside: cathode 3 1 Features / Advantages: Applications: Package:

More information

Insulated Ultrafast Rectifier Module, 210 A

Insulated Ultrafast Rectifier Module, 210 A Insulated Ultrafast Rectifier Module, 2 A SOT-227 1 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.

More information

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C) TYPICAL PERFORMANCE CURVES 6V APT2GN6J APT2GN6J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

Ultrafast Rectifier, 20 A FRED Pt

Ultrafast Rectifier, 20 A FRED Pt Ultrafast Rectifier, 20 A FRED Pt 2 2L TO-220 FullPAK FEATURES Low forward voltage drop Ultrafast soft recovery time 75 C operating junction temperature Low leakage current Fully isolated package (V INS

More information

Ultrafast Soft Recovery Rectifier Diode

Ultrafast Soft Recovery Rectifier Diode APT30DQ60BG Datasheet Ultrafast Soft Recovery Rectifier Diode Final March 2018 Contents 1 Revision History... 1 1.1 Revision E... 1 1.2 Revision D... 1 1.3 Revision C... 1 1.4 Revision B... 1 1.5 Revision

More information

Ultrafast Rectifier, 1 A FRED Pt

Ultrafast Rectifier, 1 A FRED Pt Ultrafast Rectifier, 1 A FRED Pt DO-219AB (SMF) Cathode Anode FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 175 C maximum operating junction temperature For PCF CRM, snubber operation

More information

UFB200FA40. Insulated Ultrafast Rectifier Module. Bulletin PD rev. C 10/02. t rr = 60ns I F(AV) = T C = 90 C V R = 400V

UFB200FA40. Insulated Ultrafast Rectifier Module. Bulletin PD rev. C 10/02. t rr = 60ns I F(AV) = T C = 90 C V R = 400V Insulated Ultrafast Rectifier Module Features Two Fully Independent Diodes Ceramic Fully Insulated Package (V ISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward

More information

HEXFRED Ultrafast Soft Recovery Diode, 167 A

HEXFRED Ultrafast Soft Recovery Diode, 167 A HEXFRED Ultrafast Soft Recovery Diode, 67 A FEATURES Lug terminal anode Lug terminal anode 2 Very low Q rr and t rr UL approved file E22265 Designed and qualified for industrial level Material categorization:

More information

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Ultrafast Soft Recovery Diode, 150 A FRED Pt Ultrafast Soft Recovery Diode, 50 A FRED Pt Cathode Anode PowerTab PRIMARY CHARACTERISTICS I F(AV) 50 A V R 200 V V F at I F 0.77 V t rr (typ.) See recovery table T J max. 75 C Package PowerTab Circuit

More information

HEXFRED Ultrafast Soft Recovery Diode, 240 A

HEXFRED Ultrafast Soft Recovery Diode, 240 A HEXFRED Ultrafast Soft Recovery Diode, 24 A FEATURES VS-HFA24NJ4CPbF Lug terminal anode Lug terminal anode 2 Very low Q rr and t rr UL approved file E22265 Designed and qualified for industrial level Material

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,

More information

Top View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500

Top View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state

More information

Glass Passivated Ultrafast Plastic Rectifier

Glass Passivated Ultrafast Plastic Rectifier Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction Ideal for printed circuit

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

APT2X21DC60J APT2X20DC60J

APT2X21DC60J APT2X20DC60J APT2X21DC6J ISOTOP SiC Diode Power Module V RRM = 6V I F = 2A @ T C = 1 C 2 Application 2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers 1 Features Anti-Parallel

More information

Insulated Ultrafast Rectifier Module, 280 A

Insulated Ultrafast Rectifier Module, 280 A Insulated Ultrafast Rectifier Module, 8 A SOT-7 PRIMARY CHARACTERISTICS V R 4 V I F(AV) per module at T C = 9 C 8 A t rr 4 ns Type Modules - diode FRED Pt Package SOT-7 FEATURES Two fully independent diodes

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series 100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

ANODE 2 CATHODE ANODE 1

ANODE 2 CATHODE ANODE 1 ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design

More information

Ultrafast Rectifier, 4 A FRED Pt

Ultrafast Rectifier, 4 A FRED Pt Ultrafast Rectifier, 4 A FRED Pt Cathode Anode SMB (DO-24AA) PRIMARY CHARACTERISTICS I F(AV) 4 A V R 600 V V F at I F 0.94 V t rr typ. 45 ns T J max. 75 C Package SMB (DO-24AA) Circuit configuration Single

More information

V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875

V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875 APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4

More information

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 900V, 4A, 4.0Ω N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES Low R DS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability APPLICATION High efficiency switch mode power Supply Lighting KEY PERFORMANCE

More information

HCS80R380R 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

APT37F50B APT37F50S. N-Channel FREDFET TYPICAL APPLICATIONS FEATURES. 500V, 37A, 0.15Ω Max, trr, 250ns. Absolute Maximum Ratings

APT37F50B APT37F50S. N-Channel FREDFET TYPICAL APPLICATIONS FEATURES. 500V, 37A, 0.15Ω Max, trr, 250ns. Absolute Maximum Ratings PT37F5B PT37F5 5, 37,.15Ω Max, trr, 25ns N-Channel FREDFET Power MO 8 is a high speed, high voltage N-channel switch-mode power MOFET. This 'FREDFET' version has a drain-source (body) diode that has been

More information