Super Junction MOSFET

Transcription

1 6V 6A.45Ω APT6N6BCS* APT6N6SCS* * Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Po wer Se miconductors Super Junction MOSFET (B) TO-247 D 3 PAK Ultra Low R DS(ON) Low Miller Capacitance Ultra Low ate Charge, Q g Avalanche Energy Rated Extreme dv / dt Rated Popular TO-247 or Surface Mount D 3 Package (S) D S MAXIMUM RATINS All Ratings: = 25 C unless otherwise specifi ed. Parameter APT6N6BCS_SCS S Drain-Source Voltage 6 Continuous Drain = 25 C Continuous Drain = 1 C 6 38 M Pulsed Drain Current 1 23 P D ate-source Voltage Continuous Total Power = 25 C Linear Derating Factor ± Watts W/ C,T ST T L Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. -55 to C dv /dt MOSFET dv/dt Ruggedness ( = 48V) 5 V/ns I AR Avalanche Current 2 11 E AR E AS Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy mj STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions V (BR)DSS Drain-Source Breakdown Voltage ( = V, = 25μA) 6 R DS(on) Drain-Source On-State Resistance 4 ( = 1V, = 44A).45 Ohms SS I SS (th) Zero ate Voltage Drain Current ( = 6V, = V) Zero ate Voltage Drain Current ( = 6V, = V, = 15 C) ate-source Leakage Current ( = ±2V, = V) ate Threshold Voltage ( =, = 3mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed ± "COOLMOS comprise a new family of transistors developed by Infineon Technologies A. "COOLMOS" is a trademark of Infineon Technologies A." Microsemi Website - μa na Rev D 9-217

2 DYNAMIC CHARACTERISTICS Characteristic C iss Q g Q gs Q gd t f Input Capacitance Output Capacitance Reverse Transfer Capacitance Total ate Charge 5 ate-source Charge ate-drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions = V = 25V f = 1 MHz = 1V = 4V = 25 C RESISTIVE SWITCHIN = 4V = 25 C R INDUCTIVE 25 C = 4V, = 44A, R INDUCTIVE 125 C = 4V, = 44A, R MIN APT6N6BCS_SCS TYP MAX pf nc ns μj SOURCE-DRAIN DIODE RATINS AND CHARACTERISTICS Characteristic / Test Conditions I S I SM V SD r Q rr Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 4 ( = V, I S = -44A) Reverse Recovery Time (I S = -44A, dl S /dt = 1A/μs) Reverse Recovery Charge (I S = -44A, dl S /dt = 1A/μs) ns μc dv / dt Peak Diode Recovery dv / dt 7 4 V/ns THERMAL CHARACTERISTICS R θjc R θja Characteristic Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as P AV = E AR *f 3 Starting T j = +25 C, L = 33.23mH, R = 25Ω, Peak I L = 11A 4 Pulse Test: Pulse width < 38μs, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein C/W 4 5 See MIL-STD-75 Method Eon includes diode reverse recovery. See fi gures 18, 2. 7 We do noecommend using this CoolMOS product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt Rev D Z θjc, THERMAL IMPEDANCE ( C/W) D = SINLE PULSE Duty Factor D = t1 /t 2 Peak = P DM x Z θjc RECTANULAR PULSE DURATION (SECONDS) FIURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: P DM t 1 t 2

3 Typical Performance Curves R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) > (ON) x R DS(ON) MAX. 25μSEC. PULSE <.5 % DUTY CYCLE = -55 C = +25 C = +125 C V APT6N6BCS_SCS 15, 1 & 7V , ATE-TO-SOURCE VOLTAE (VOLTS) FIURE 3, TRANSFER CHARACTERISTICS FIURE 4, R DS (ON) vs DRAIN CURRENT , CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIURE 6, BREAKDOWN VOLTAE vs TEMPERATURE = 44A = 1V , JUNCTION TEMPERATURE ( C), CASE TEMPERATURE ( C) FIURE 7, ON-RESISTANCE vs. TEMPERATURE FIURE 8, THRESHOLD VOLTAE vs TEMPERATURE (TH), THRESHOLD VOLTAE BS, DRAIN-TO-SOURCE BREAKDOWN R DS (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VOLTAE (NORMALIZED) V 4 5V 2 4.5V FIURE 2, LOW VOLTAE OUTPUHARACTERISTICS NORMALIZED TO = 44A =1V 6V =2V Rev D 9-217

4 23 OPERATION HERE LIMITED BY R DS (ON) 1, APT6N6BCS_SCS Rev D 9-217, ATE-TO-SOURCE VOLTAE (VOLTS) SWITCHIN ENERY (μj) and (ns) =+25 C =+15 C SINLE PULSE FIURE 9, MAXIMUM SAFE OPERATIN AREA = 44A =3V 1μS 1mS 1mS R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) SWITCHIN ENERY (μj) and t f (ns) C C iss iss FIURE 1, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAE Q g, TOTAL ATE CHARE (nc) V SD, SOURCE-TO-DRAIN VOLTAE (VOLTS) FIURE 11, ATE CHARE vs ATE-TO-SOURCE VOLTAE FIURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAE V = 4V R = 4.3W 2 9 T = 125 C J 8 L = 1μH 7 15 V = 4V R = 4.3W 6 t f T = 125 C J 5 1 L = 1μH FIURE 13, DELAY TIMES vs CURRENT FIURE 14, RISE AND FALL TIMES vs CURRENT V = 4V R = 4.3W T = 125 C J L = 1μH E includes on diode reverse recovery. =12V =48V =+15 C =+25 C 1 V = 4V E off I = 44A 5 D T = 125 C 5 J L = 1μH E includes on diode reverse recovery R, ATE RESISTANCE (Ohms) FIURE 15, SWITCHIN ENERY vs CURRENT FIURE 16, SWITCHIN ENERY vs ATE RESISTANCE 1, 1, 1

5 APT6N6BCS_SCS 9% 1% ate Voltage 125 C ate Voltage 125 C 9% Drain Current 9% tf Drain Voltage 1% 5% Drain Voltage 1% Drain Current Switching Energy Switching Energy Figure 17, Turn-on Switching Waveforms and Definitions Figure 18, Turn-off Switching Waveforms and Definitions APT6DQ6 D.U.T. Figure 19, Inductive Switching Test Circuit TO-247 Package Outline e3 1% Sn D 3 PAK Package Outline e3 1% Sn Drai n 4.69 (.185) 5.31 (.29) 1.49 (.59) 2.49 (.98).4 (.16).79 (.31) 2.8 (.819) (.845) 6.15 (.242) BSC 4.5 (.177) Max (.78) 2.32 (.8) 1.1 (.4) 1.4 (.55) 2.21 (.87) 2.59 (.12) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) (.61) (.64) 5.38 (.212) 6.2 (.244) 3.5 (.138) 3.81 (.15) 2.87 (.113) 3.12 (.123) 1.65 (.65) 2.13 (.84) ate Drain Source Drai n (Heat Sink) 4.98 (.196) 5.8 (.2) 1.47 (.58) 1.57 (.62).46 (.18) {3 Plcs}.56 (.22).2 (.1).178 (.7) 2.67 (.15) 2.84 (.112) 1.22 (.48) 1.32 (.52) (.628) 16.5(.632) Revised 4/18/ (.5) 1.4 (.55) 1.98 (.78) 2.8 (.82) 5.45 (.215) BSC {2 Plcs. } 1.4 (.41) 1.15(.45) (.543) 13.99(.551) Source Drain ate Dimensions in Millimeters and (Inches) (.528) 13.51(.532) Revised 8/29/ (.15) 4.6 (.16) (Base of Lead) Heat Sink (Drain) and Leads are Plated (.453) (.457) Rev D 9-217