Ultra Fast NPT - IGBT
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- Sharleen Malone
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1 APTGRBD APTGRB_SD APTGRSD V, A, V ce(on) =.V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. T O-7 G D PA K C E (S) Features G C E Low Saturation Voltage Short Circuit Withstand Rated Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T C = C unless otherwise specifi ed. Symbol Parameter Ratings Unit V ces Collector Emitter Voltage V Gate-Emitter Voltage ± Continuous Collector T C = C 7 Continuous Collector T C A M Pulsed Collector Current SCWT Short Circuit Withstand Time: = V, = V, T C = C μs P D Total Power T C = C W,T STG Operating and Storage Junction Temperature Range - to C T L Max. Lead Temp. for Soldering:." from Case for Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = μa) (TH) Gate Threshold Voltage ( =, =.ma, T j = C)... (ON) Collector-Emitter On Voltage ( = V,, T j = C).. Collector-Emitter On Voltage ( = V,, T j ). Collector-Emitter On Voltage ( = V, = A, T j = C). Volts ES Collector Cut-off Current ( = V, = V, T j = C) μa Collector Cut-off Current ( = V, = V, T j ) I GES Gate-Emitter Leakage Current ( = ±V) ± na CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website Rev A -
2 DYNAMIC CHARACTERISTICS APTGRB_SD Symbol Parameter Test Conditions Min Typ Max Unit C ies Input Capacitance Capacitance 78 C oes Output Capacitance = V, = V 7 pf C res Reverse Transfer Capacitance f = MHz 7 P Gate to Emitter Plateau Voltage 7. V Gate Charge Q g Total Gate Charge = V Q ge Gate-Emitter Charge 7 = V nc Q gc Gate- Collector Charge 7 97 t d(on) t r t d(off) t f Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Inductive Switching ( C) V CC = V = V R G =. Ω = + C 7 7 t d(on) Turn-On Delay Time Inductive Switching ( C) t r Current Rise Time V CC = V t d(off) Turn-Off Delay Time = V t f Current Fall Time 8 Turn-On Switching Energy R G =. Ω 97 9 Turn-Off Switching Energy = + C 8 7 ns μj ns μj THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance (Diode).8 Junction to Case Thermal Resistance (IGBT). R θja Junction to Ambient Thermal Resistance W T Torque Package Weight Mounting Torque (TO-7 Package), - or M screw Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Pulse test: Pulse Width < 8μs, duty cycle < %. See Mil-Std-7 Method 7. R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC) is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-. Microsemi reserves the right to change, without notice, the specifications and information contained herein. C/W. oz. g in-lbf. N m. -9 Rev A - Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t /t Peak = P DM x Z θjc +T C RECTANGULAR PULSE DURATION (SECONDS) Figure, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t
3 TYPICAL PERFORMANCE CURVES APTGRB_SD = V FREQUENCY (khz), COLLECTOR CURRENT (A) = - C = C = C BS, BREAKDOWN VOLTAGE, COLLECTOR CURRENT (A), COLLECTOR CURRENT (A) (A) FIGURE, Max Frequency vs Current (T case = 7 C) 8 V V μs PULSE TEST<. % DUTY CYCLE = C = C = - C 8, GATE-TO-EMITTER VOLTAGE (V) FIGURE, Transfer Characteristics , COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE, Output Characteristics ( = C) , JUNCTION TEMPERATURE FIGURE 8, Breakdown Voltage vs Junction Temperature 9V 8.V 8.V 7.V 7V.V, COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V), DC COLLECTOR CURRENT (A) 8, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE, Saturation Voltage Characteristics ( = C) = V. μs PULSE TEST <. % DUTY CYCLE -, Junction Temperature ( C) FIGURE, On State Voltage vs Junction Temperature = C. μs PULSE TEST <. % DUTY CYCLE 8, GATE-TO-EMITTER VOLTAGE (V) FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage = A =.A = A =.A T C, Case Temperature ( C) FIGURE 9, DC Collector Current vs Case Temperature -9 Rev A -
4 TYPICAL PERFORMANCE CURVES C, CAPACITANCE (F).E 8.E 9.E C ies C oes C res.e, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE, Capacitance vs Collector-To-Emitter Voltage, GATE-TO-EMITTER VOLTAGE (V) 8 8 = C = V = V APTGRB_SD = 9V GATE CHARGE (nc) FIGURE, Gate charge = V, =V, R G =.Ω = C SWITCHING TIME (ns) T r T d(on) = V, =V, R G =.Ω = C or C SWITCHING TIME (ns) T d(off) T f SWITCHING ENERGY LOSS (μj) E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE, Turn-On Time vs Collector Current = V, =V, R G =.Ω = C SWITCHING ENERGY LOSS (μj) E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE, Turn-Off Time vs Collector Current = V, =V, E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE, Energy Loss vs Collector Current R G, GATE RESISTANCE (Ω) FIGURE, Energy Loss vs Gate Resistance -9 Rev A - SWITCHING ENERGY LOSSES (μj) = V, =V, R G =.Ω 7, JUNCTION TEMPERATURE ( C) FIGURE, Switching Energy vs Junction Temperature, COLLECTOR CURRENT (A) μs.ms ms ms ms, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 7, Minimum Switching Safe Operating Area
5 MAXIMUM RATINGS STATIC ELECTRICAL CHARACTERISTICS DYNAMIC CHARACTERISTICS ULTRAFAST SOFT RECOVERY RECTIFIER DIODE APTGRB_SD All Ratings: T C = C unless otherwise specifi ed. Symbol Characteristic / Test Conditions APTGRB_SD Unit (AV) Maximum Average Forward Current (T C = C, Duty Cycle =.) (RMS) RMS Forward Current (Square wave, % duty) 9 SM Non-Repetitive Forward Surge Current ( = C, 8. ms) Symbol Characteristic / Test Conditions Min Type Max Unit V F Forward Voltage = A.8 = A. = A,. Symbol Characteristic Test Conditions Min Typ Max Unit I t Reverse Recovery Time F = A, di F /dt = -A/μs, - rr - = V, = C ns t Reverse Recovery Time - rr - = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr - nc = 8V, T C = C Maximum Reverse Recovery Current - - Amps t Reverse Recovery Time - rr 9 - ns = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr 9 - nc = 8V, T C Maximum Reverse Recovery Current - - Amps t Reverse Recovery Time - rr - ns = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr - nc = 8V, T C Maximum Reverse Recovery Current Amps Amps Volts. Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t /t. Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) FIGURE 8. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM -9 Rev A - t t
6 APTGRB_SD Q rr, REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) 8 V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/μs) Figure 9. Forward Current vs. Forward Voltage Figure. Reverse Recovery Time vs. Current Rate of Change = - C A = 7 C = C 7.A = 8V A, REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (A) (ns) = 8V 7.A A A A A = 8V 7.A -9 Rev A di F /dt, CURRENT RATE OF CHANGE (A/μs) -di F /dt, CURRENT RATE OF CHANGE (A/μs) Figure. Reverse Recovery Charge vs. Current Rate of Change Figure. Reverse Recovery Current vs. Current Rate of ChangeTum testic C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/μs) Duty cycle =. = 7 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure. Dynamic Parameters vs. Junction Temperature Figure. Maximum Average Forward Current vs. CaseTemperature 8 7 t rr Q rr Q rr t rr, REVERSE VOLTAGE (V) Figure. Junction Capacitance vs. Reverse Voltage (AV) (A)
7 APTGRB_SD V r +8V di F /dt Adjus t V D.U.T. μh t rr /Q rr Waveform PEARSON 878 CURRENT TRANSFORMER Figure. Diode Test Circuit - Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current t rr - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at Zer o. which the straight line through and., passes through zero. Q rr - Area Under the Curve Defi ned by and t RR. Figure 7. Diode Reverse Recovery Waveform Definition TO-7 Package Outline D PAK Package Outline Collector (Cathode).9 (.8). (.9).9 (.9).9 (.98). (.). (.). (.87).9 (.).8 (.89). (.8). (.) BSC. (.77) Max. 9.8 (.78). (.8). (.). (.). (.) BSC -Plcs..9 (.). (.) Dimensions in Millimeters (Inches).8 (.). (.). (.8).8 (.).87 (.). (.). (.). (.8) Gate Collector (Cathode) Emitter (Anode) (Cathode) Collector (Heat Sink).98 (.9).8 (.).7 (.8).7 (.). (.8) { Plcs}. (.). (.).78 (.7).7 (.).8 (.). (.8). (.).9 (.8).(.) Revised /8/9.7 (.). (.).98 (.78).8 (.8). (.) BSC { Plcs. }. (.).(.).79 (.).99(.) Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches). (.8).(.) Revised 8/9/97.8 (.). (.) (Base of Lead ). (.). (.7) Heat Sink (Collector) and Leads are Plated -9 Rev A -
8 APTGRB_SD The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modifi ed, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an offi cer of Microsemi. -9 Rev A - Microsemi reserves the right to change the confi guration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fi tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifi cations believed to be reliable but are not verifi ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers fi nal application. User or customer shall not rely on any data and performance specifi cations or parameters provided by Microsemi. It is the customer s and user s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided AS IS, WHERE IS and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifi cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profi t. The product is subject to other terms and conditions which can be located on the web at
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