Ultra Fast NPT - IGBT

Transcription

1 APT8GR12JD 12V, 8A, V ce(on) = 2.V Typical Features Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. Low Saturation Voltage Low Tail Current RoHS Compliant Short Circuit Withstand Rated High Frequency Switching Ultra Low Leakage Current G E ISOTOP Combi (IGBT and Diode) C E S OT -227 "UL Recognized" file # E1492 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Symbol Parameter Ratings Unit V ces Collector Emitter Voltage 12 V Gate-Emitter Voltage ±3 1 Continuous Collector T C Continuous Collector T C = 7 C 8 A M Pulsed Collector Current 1 34 SCWT Short Circuit Withstand Time: = V, = 1V, T C =12 C 1 μs P D Total Power T C 9 W,T STG Operating and Storage Junction Temperature Range - to 1 C T L Max. Lead Temp. for Soldering:.3" from Case for 1 Sec. 3 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = 1.mA) 12 (TH) Gate Threshold Voltage ( =, = 2.mA, T j ) 3... (ON) Collector-Emitter On Voltage ( = 1V,, T j ) Collector-Emitter On Voltage ( = 1V,, T j ) 3.3 Collector-Emitter On Voltage ( = 1V, = 17A, T j ) 3. Volts ES Collector Cut-off Current ( = 12V, = V, T j ) µa Collector Cut-off Current ( = 12V, = V, T j ) 2 2 I GES Gate-Emitter Leakage Current ( = ±2V) ±2 na CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website Rev B 3-213

2 DYNAMIC CHARACTERISTICS APT8GR12JD Symbol Parameter Test Conditions Min Typ Max Unit C ies Input Capacitance Capacitance 84 C oes Output Capacitance = V, = 2V 72 pf C res Reverse Transfer Capacitance f = 1MHz 19 P Gate to Emitter Plateau Voltage 7. V Gate Charge 3 Q g Total Gate Charge 49 = 1V Q ge Gate-Emitter Charge 8 = V nc Q gc Gate- Collector Charge t d(on) t r t d(off) t f Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Inductive Switching (2 C) V CC = V = 1V R G = 4.3 Ω 4 = +2 C t d(on) Turn-On Delay Time Inductive Switching (12 C) 43 t r Current Rise Time V CC = V 7 t d(off) Turn-Off Delay Time = 1V 3 t f Current Fall Time 9 Turn-On Switching Energy R G = 4.3 Ω ,7 Turn-Off Switching Energy = +12 C ns µj ns µj THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit R θjc Junction to Case Thermal Resistance (IGBT) R θjc Junction to Case Thermal Resistance (Diode) - -. C/W W T Package Weight oz Torque Terminals and Mounting Screws in lbf N m V Isolation RMS Voltage (-Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Volts 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 38µs, duty cycle < 2%. 3 See Mil-Std-7 Method R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC442) is the energy loss at turn-on and includes the charge stored in the freewheeling diode. is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein Rev B Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t 1 t 2

3 TYPICAL PERFORMANCE CURVES FREQUENCY (khz), COLLECTOR CURRENT (A), COLLECTOR CURRENT (A) (A) FIGURE 2, Max Frequency vs Current (T case = 7 C) 3 1V 13V V µs PULSE TEST<. % DUTY CYCLE 1V 9.V 8.V 7.V, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 4, Output Characteristics ( ) = 1 C = - C , GATE-TO-EMITTER VOLTAGE (V) FIGURE, Transfer Characteristics 1.2 7V, COLLECTOR CURRENT (A), COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V) , COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Saturation Voltage Characteristics APT8GR12JD , Junction Temperature ( C) FIGURE, On State Voltage vs Junction Temperature. 2µs PULSE TEST <. % DUTY CYCLE = 1V = - C = 1 C = 17A = 42.A = 1V. 2µs PULSE TEST <. % DUTY CYCLE = 17A = 42.A , GATE-TO-EMITTER VOLTAGE (V) FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage 1 BV, BREAKDOWN VOLTAGE CES (NORMALIZED) , JUNCTION TEMPERATURE FIGURE 8, Breakdown Voltage vs Junction Temperature, DC COLLECTOR CURRENT (A) T C, Case Temperature ( C) FIGURE 9, DC Collector Current vs Case Temperature 2-44 Rev B 3-213

4 TYPICAL PERFORMANCE CURVES APT8GR12JD C, CAPACITANCE (F) 2.E 8 1.E 8 1.E 9 C ies C oes C res, GATE-TO-EMITTER VOLTAGE (V) = 24V = V = 9V 1.E , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 1, Capacitance vs Collector-To-Emitter Voltage 18 = V, =1V, R G = 4.3Ω 1 or 12 C GATE CHARGE (nc) FIGURE 11, Gate charge T d(off) SWITCHING TIME (ns) T r T d(on) SWITCHING TIME (ns) = V, =1V, R G = 4.3Ω T f 2 SWITCHING ENERGY LOSS (μj) E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Turn-On Time vs Collector Current = V, =1V, R G = 4.3Ω E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Energy Loss vs Collector Current 8 SWITCHING ENERGY LOSS (μj) E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-Off Time vs Collector Current = V, =1V, R G, GATE RESISTANCE (Ω) FIGURE 1, Energy Loss vs Gate Resistance Rev B SWITCHING ENERGY LOSSES (μj) 7 4 = V, =1V, R G = 4.3Ω , JUNCTION TEMPERATURE ( C) FIGURE 1, Switching Energy vs Junction Temperature, COLLECTOR CURRENT (A) µs 1ms 1ms , COLLECTOR-TO-EMITTER VOLTAGE FIGURE 17, Minimum Switching Safe Operating Area

5 APT8GR12JD MAXIMUM RATINGS ULTRAFAST SOFT RECOVERY RECTIFIER DIODE STATIC ELECTRICAL CHARACTERISTICS DYNAMIC CHARACTERISTICS All Ratings: T C unless otherwise specified. Symbol Characteristic / Test Conditions APT8GR12JD Unit (AV) Maximum Average Forward Current (T C = 92 C, Duty Cycle =.) (RMS) RMS Forward Current (Square wave, % duty) 73 SM Non-Repetitive Forward Surge Current ( = 4 C, 8.3 ms) 4 Symbol Characteristic / Test Conditions Min Type Max Unit V F Forward Voltage = A 2. = 12A 3.7 = A, 1.82 Symbol Characteristic Test Conditions Min Typ Max Unit t rr Reverse Recovery Time = 1A, di F /dt = -1A/µs, = 3V, - - t Reverse Recovery Time - rr 2 - = A, di F /dt = -2A/µs Q Reverse Recovery Charge - rr - nc = 8V, T C Maximum Reverse Recovery Current - - Amps t Reverse Recovery Time - rr 3 - ns = A, di F /dt = -2A/µs Q Reverse Recovery Charge - rr nc = 8V, T C Maximum Reverse Recovery Current Amps t Reverse Recovery Time - rr 1 - ns = A, di F /dt = -1A/µs Q Reverse Recovery Charge - rr nc = 8V, T C Maximum Reverse Recovery Current Amps Amps Volts ns. R θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM 2-44 Rev B t 1 t 2

6 2-44 Rev B Dynamic Characteristics Q rr, REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) unless otherwise specified APT8GR12JD V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/µs) Figure 19. Forward Current vs. Forward Voltage Figure 2. Reverse Recovery Time vs. Current Rate of Change di F /dt, CURRENT RATE OF CHANGE (A/µs) -di F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 21. Reverse Recovery Charge vs. Current Rate of Change Figure 22. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to 1A/µs) = 8V t rr = 17 C 12A Q rr 3A = - C Q rr A Duty cycle =. = 17 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 23. Dynamic Parameters vs. Junction Temperature Figure 24. Maximum Average Forward Current vs. CaseTemperature , REVERSE VOLTAGE (V) Figure 2. Junction Capacitance vs. Reverse Voltage t rr, REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (A) (ns) (AV) (A) = 8V 12A 3A A 12A A = 8V 3A

7 APT8GR12JD V r +18V di F /dt Adjus t V D.U.T. 3µH t rr /Q rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 2. Diode Test Circuit 1 - Forward Conduction Current 2 di F /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current Zer o t 4 rr - Reverse Recovery Time measured from zero crossing where.2 3 diode current goes from positive to negative, to the point at 2 which the straight line through and.2, passes through zero. Q rr - Area Under the Curve Defined by and t RR. Figure 27. Diode Reverse Recovery Waveform Definition SOT-227 (ISOTOP ) Package Outline 31. (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.11) W=4.3 (.19) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.43) 12.2 (.48) 8.9 (.3) 9. (.378) Hex Nut M 4 (4 places ) r = 4. (.17) (2 places) 4. (.17) 4.2 (.1) (2 places).7 (.3).8 (.33) 12. (.49) 12.8 (.4) 2.2 (.992) 2.4 (1.) 14.9 (.87) 1.1 (.94) 3.1 (1.18) 3.3 (1.193) 38. (1.49) 38.2 (1.4) 3.3 (.129) 3. (.143) 1.9 (.77) 2.14 (.84) * Emitter/Anode Collector/Cathode * Emitter/Anode Dimensions in Millimeters and (Inches) Gate *Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal Rev B 3-213

8 APT8GR12JD The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi Rev B Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer s and user s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided AS IS, WHERE IS and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at