= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

Transcription

1 V The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. Low Forward Voltage Drop RBSOA and SCSOA Rated FAST IGBT & FRED Ultrafast Soft Recovery Anti-parallel Diode High Freq. Switching to KHz Ultra Low Leakage Current G E C ISOTOP G E SOT-7 "UL Recognized" file # E9 C E MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Parameter S Collector-Emitter Voltage Gate-Emitter Voltage ±3 Volts Continuous Collector T C 9 Continuous Collector T C = C 79 M Pulsed Collector Current SSOA Switching Safe Operating = C V P D Total Power Dissipation 6 Watts,T STG Operating and Storage Junction Temperature Range - to STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio Units V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = 3µA) (TH) (ON) ES I GES Gate Threshold Voltage ( =, = µa, T j ).. 6. Collector-Emitter On Voltage (,, T j ) Collector-Emitter On Voltage (,, T j = C) Collector Cut-off Current ( = V, = V, T j ) Collector Cut-off Current ( = V, = V, T j = C) Gate-Emitter Leakage Current ( = ±V) ± CAUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Volts ma na

2 DYNAMIC CHARACTERISTICS Characteristic Test Conditio C ies C oes C res P Q g Q ge Q gc SSOA Input Capacitance Output Capacitance Reverse Trafer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Capacitance = V, = V f = MHz Gate Charge = V = C,, = V, L = µh, = V pf V nc A t d(on) t r t d(off) t f E on E on E off t d(on) t r t d(off) t f E on E on E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (With Diode) Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (With Diode) Turn-off Switching Energy 6 Inductive Switching ( C) V CC = V = + C Inductive Switching ( C) V CC = V = + C mj mj THERMAL AND MECHANICAL CHARACTERISTICS Characteristic R θjc R θjc Junction to Case (IGBT) Junction to Case (DIODE). N/A C/W V Isolation RMS Voltage (-Hz Sinusoidal Waveform from Terminals to Mounting Base for Min.) Volts W T Package Weight.3 9. oz gm Torque Maximum Terminal & Mounting Torque. Ib in N m Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, I ces includes both IGBT and diode leakages 3 See MIL-STD-7 Method 37. E on is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure, but with a Silicon Carbide diode. E on is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures,.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-. (See Figures, 3.) APT Reserves the right to change, without notice, the specificatio and information contained herein.

3 V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR CURRENT (A), COLLECTOR CURRENT (A) (NORMALIZED) , COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) µs PULSE TEST<. % DUTY CYCLE, DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V), COLLECTOR CURRENT (A) = C 6 8 7, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) 3. µs PULSE TEST <. % DUTY CYCLE 8 6 7, GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature = C = - C FIGURE, Output Characteristics( ) FIGURE 3, Trafer Characteristics = A = - C. µs PULSE TEST <. % DUTY CYCLE = A , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature FIGURE, Output Characteristics ( = C) V 3V V = V = V V FIGURE, Gate Charge = A = A V 9V 8V = 9V

4 SWITCHING ENERGY LOSSES (mj) E ON, TURN ON ENERGY LOSS (mj) t r, RISE TIME () t d(on), TURN-ON DELAY TIME () 3 = V or C L = µh E FIGURE 9, Turn-On Delay Time vs Collector Current, L = µh, = V = or C, E FIGURE, Current Rise Time vs Collector Current E FIGURE 3, Turn-On Energy Loss vs Collector Current, GATE RESISTANCE (OHMS) FIGURE, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mj) E OFF, TURN OFF ENERGY LOSS (mj) t f, FALL TIME () t d (OFF), TURN-OFF DELAY TIME () =V, = C = V L = µh =V, = C E FIGURE, Turn-Off Delay Time vs Collector Current, L = µh, = V 3 E FIGURE, Current Fall Time vs Collector Current 7 3 = V = +V = V = +V = C E on, A A = C A E on, A A E on, A = C,, E FIGURE, Turn Off Energy Loss vs Collector Current = V = +V = V = +V E on, A A = C E on, A A A E on, A, JUNCTION TEMPERATURE ( C) FIGURE 6, Switching Energy Losses vs Junction Temperature

5 , 3 C, CAPACITANCE ( P F),,, C ies C oes C res, COLLECTOR CURRENT (A) 3, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 7, Capacitance vs Collector-To-Emitter Voltage Figure 8,Minimim Switching Safe Operating Area. Z θjc, THERMAL IMPEDANCE ( C/W)..6. D = t.3 t.. Duty Factor D = t /t SINGLE PULSE Peak T. J = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 9a, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM Dissipated Power (Watts) ( C) T C ( C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 9b, TRANSIENT THERMAL IMPEDANCE MODEL Z EXT F MAX, OPERATING FREQUENCY (khz) = C D = % = V T C = C T C = 7 C 3 7 9, COLLECTOR CURRENT (A) Figure, Operating Frequency vs Collector Current F max = min (f max, f max ). f max = td(on) + t r + t d(off) + t f f max = P diss = P diss - P cond E on + E off - T C R θjc

6 APTDQ % Gate Voltage = C t d(on) V CC t r 9% Collector Current % % Collector Voltage A D.U.T. Switching Energy Figure, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitio 9% Gate Voltage = C t d(off) 9% Collector Voltage t f % Collector Current Switching Energy Figure 3, Turn-off Switching Waveforms and Definitio

7 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Characteristic / Test Conditio (AV) (RMS) Maximum Average Forward Current (T C = 8 C, Duty Cycle =.) RMS Forward Current (Square wave, % duty) 73 SM Non-Repetitive Forward Surge Current ( = C, 8.3ms) STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio V F Forward Voltage = A = A. 3.7 Volts = A, = C.8 DYNAMIC CHARACTERISTICS Characteristic Test Conditio Reverse Recovery Time = A, di F /dt = -A/µs, = 3V, Reverse Recovery Time I Reverse Recovery Charge F = A, di F /dt = -A/µs = V, T C Maximum Reverse Recovery Current nc Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = A, di F /dt = -A/µs = V, T C = C nc Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = A, di F /dt = -A/µs = V, T C = C nc. Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) FIGURE a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM t t Duty Factor D = t /t Peak = P DM x Z θjc + T C ( C) T C ( C) Dissipated Power (Watts) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE b, TRANSIENT THERMAL IMPEDANCE MODEL Z EXT

8 , REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) 3 3 V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/µs) Figure. Forward Current vs. Forward Voltage Figure 6. Reverse Recovery Time vs. Current Rate of Change -di F /dt, CURRENT RATE OF CHANGE (A/µs) -di F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Charge vs. Current Rate of Change Figure 8. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/µs) = C = V = 7 C = C A 3A = - C A Duty cycle =. = 7 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 9. Dynamic Parameters vs. Junction Temperature Figure 3. Maximum Average Forward Current vs. CaseTemperature 3, REVERSE VOLTAGE (V) Figure 3. Junction Capacitance vs. Reverse Voltage, REVERSE RECOVERY CURRENT, REVERSE RECOVERY TIME (A) () (AV) (A) = C = V A 3A A A A = C = V 3A

9 V r +8V di F /dt Adjust APT3LLL V D.U.T. 3µH / Waveform PEARSON 878 CURRENT TRANSFORMER Figure 3. Diode Test Circuit 3 - Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current. Zero - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through and. passes through zero Area Under the Curve Defined by and. Figure 33, Diode Reverse Recovery Waveform and Definitio SOT-7 (ISOTOP ) Package Outline 3. (.) 3.7 (.8) 7.8 (.37) 8. (.3) W=. (.6) W=.3 (.69) H=.8 (.87) H=.9 (.93) ( places).8 (.63). (.) 8.9 (.3) 9.6 (.378) Hex Nut M ( places) r =. (.7) ( places). (.7). (.6) ( places).7 (.3).8 (.33).6 (.96).8 (.). (.99). (.) ISOTOP is a Registered Trademark of SGS Thomson (.9) 3.6 (.3).9 (.77). (.8).9 (.87) * Emitter/Anode Collector/Cathode. (.9) 3. (.8) * Emitter/Anode terminals are 3.3 (.93) shorted internally. Current 38. (.96) handling capability is equal 38. (.) for either Emitter/Anode terminal. * Emitter/Anode Gate Dimeio in Millimeters and (Inches)