Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

Transcription

1 PRODUCT SUMMARY SOT-227 V CES 6 V I C DC A at 7 C V CE(on) typical at A, 25 C.72 V I F DC A at 25 C Insulated Gate Bipolar Transistor (Trench IGBT), A FEATURES GTDA6U Trench IGBT technology with positive temperature coefficient Square RBSOA 3 μs short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery T J maximum = 75 C Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 22/95/EC BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Speed 4 khz to 3 khz Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V Continuous collector current I () C T C = 8 C 37 T C = 25 C 84 Pulsed collector current I CM 35 Clamped inductive load current I LM 35 A T C = 25 C Diode continuous forward current I F T C = 8 C 7 Peak diode forward current I FSM 2 Gate to emitter voltage V GE ± 2 V T C = 25 C 577 Power dissipation, IGBT P D T C = 7 C 223 T C = 25 C 25 Power dissipation, diode P D T C = 7 C 79 W Isolation voltage V ISOL Any terminal to case, t = min 25 V Note () Maximum continuous collector current must be limited to A to do not exceed the maximum temperature of terminals Document Number: 9385 For technical questions within your region, please contact one of the following: Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

2 GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 25 μa Collector to emitter voltage V V GE = 5 V, I C = A CE(on) V GE = 5 V, I C = A, Gate threshold voltage V GE(th) V CE = V GE, I C = 25 μa Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (25 C to 25 C) mv/ C V GE = V, V CE = 6 V -.6 μa Collector to emitter leakage current I CES V GE = V, V CE = 6 V, ma Forward voltage drop V FM V I F = 4 A, V GE = V I F = 4 A, V GE = V, Gate to emitter leakage current I GES V GE = ± 2 V - - ± 2 na V SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on I C = A, V CC = 36 V, Turn-off switching loss E off V GE = 5 V, R g = Total switching loss E tot L = 5 μh, mj Turn-on switching loss E on Energy losses Turn-off switching loss E off include tail and Total switching loss E tot diode recovery I C = A, V CC = 36 V, (see fig. 8) Turn-on delay time t d(on) V GE = 5 V, R g = Rise time t r L = 5 μh, ns Turn-off delay time t d(off) Fall time t f Reverse bias safe operating area RBSOA T J = 75 C, I C = 35 A, R g = 22 V GE = 5 V to V, V CC = 4 V, V P = 6 V, L = 5 μh Fullsquare ns Diode reverse recovery time t rr Diode peak reverse current I rr IF = 5 A, dif/dt = 2 A/μs, VR = 2 V A Diode recovery charge Q rr nc Diode reverse recovery time t rr ns I F = 5 A, di F /dt = 2 A/μs, Diode peak reverse current I rr V R = 2 V, A Diode recovery charge Q rr nc Short circuit safe operating area SCSOA T J = 75 C, R g = 22, V GE = 5 V to V, V CC = 4 V, V p = 6 V 3 μs For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-

3 Insulated Gate Bipolar Transistor (Trench IGBT), A GTDA6U THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J, T Stg C IGBT Junction to case R thjc Diode C/W Case to sink per module R thcs Mounting torque, 6-32 or M3 screw Nm Weight g Allowable Case Temperature ( C) _ I C - Continuous Collector Current (A) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature I C (A) 9385_ T J = 75 C V CE (V) Fig. 3 - Typical IGBT Collector Current Characteristics V GE = 5 V I C (A) 9385_2.. V CE (V) Fig. 2 - IGBT Reverse Bias SOA T J = 75 C, V GE = 5 V Allowable Case Temperature ( C) 9385_ I F - Continuous Forward Current (A) Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 9385 For technical questions within your region, please contact one of the following: Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

4 GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A T J = 75 C 2. A I F (A) V CE (V).5 5 A 27 A 9385_ V FM (V) Fig. 5 - Typical Diode Forward Characteristics 9385_ T J ( C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V 3. T J = 75 C 2.5 I CES (ma)... Energy (mj) E off..5 E on _6 V CES (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current _ I C (A) Fig. 9 - Typical IGBT Energy Loss vs. I C, L = 5 μh, V CC = 36 V, R g = 5, V GE = 5 V V geth (V) Switching Time (ns) t f t d(off) t d(on) t r _7 I C (ma) Fig. 7 - Typical IGBT Threshold Voltage 9385_ I C (A) Fig. - Typical IGBT Switching Time vs. I C, L = 5 μh, V CC = 36 V, R g = 5, V GE = 5 V For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-

5 Insulated Gate Bipolar Transistor (Trench IGBT), A GTDA6U 6 9 Energy (mj) E off E on t rr (ns) _ R g (Ω) 9385_3 di F /dt (A/μs) Fig. - Typical IGBT Energy Loss vs. R g, I C = A, L = 5 μh, V CC = 36 V, V GE = 5 V Fig. 3 - Typical t rr Diode vs. di F /dt V rr = 2 V, I F = 5 A 3 t d(on) 25 Switching Time (ns) t f t r t d(off) I rr (A) _2 R g (Ω) 9385_4 di F /dt (A/μs) Fig. 2 - Typical IGBT Switching Time vs. R g, L = 5 μh, V CC = 36 V, I C = A, V GE = 5 V Fig. 4 - Typical I rr Diode vs. di F /dt V rr = 2 V, I F = 5 A 4 2 Q rr (nc) _5 di F /dt (A/μs) Fig. 5 - Typical Q rr Diode vs. di F /dt V rr = 2 V, I F = 5 A Document Number: 9385 For technical questions within your region, please contact one of the following: Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5

6 GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 9385_ t - Rectangular Pulse Duration (s) Fig. 6 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 9385_ t - Rectangular Pulse Duration (s) Fig. 7 - Maximum Thermal Impedance Z thjc Characteristics (Diode) For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-

7 Insulated Gate Bipolar Transistor (Trench IGBT), A GTDA6U 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC 2 R g * Driver same type as D.U.T.; V C = 8 % of V ce(max) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. 8a - Clamped Inductive Load Test Circuit Fig. 8b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L V R g D.U.T./ driver + - V CC Fig. 9a - Switching Loss Test Circuit 2 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 9b - Switching Loss Waveforms Test Circuit Document Number: 9385 For technical questions within your region, please contact one of the following: Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7

8 GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A ORDERING INFORMATION TABLE Device code G T D A 6 U Insulated Gate Bipolar Transistor (IGBT) 2 - T = Trench IGBT technology 3 - Current rating ( = A) 4 - Circuit configuration (D = Single switch with antiparallel diode) 5 - Package indicator (A = SOT-227) 6 - Voltage rating (6 = 6 V) 7 - Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION 3 (C) 2 (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-

9 Outline Dimensions SOT-227 DIMENSIONS in millimeters (inches) 38.3 (.58) 37.8 (.488) Ø 4.4 (.73) Ø 4.2 (.65) 2.5 (.492) Chamfer 2. (.79) x (.295) 2. (.82).9 (.75) 3.2 (.89) 29.8 (.73) 8. (.39) 4 x 7.7 (.33) 5. (.59) R full.25 (.) M C A M B M 4 x M4 nuts -A (.246) 25.7 (.2) 25.2 (.992) -B- 2. (.82).9 (.75) -C-.2 (.5) 2.3 (.484).8 (.464) Notes Dimensioning and tolerancing per ANSI Y4.5M-982 Controlling dimension: millimeter Document Number: 9536 For technical questions, contact: indmodules@vishay.com Revision: 28-Aug-7

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