Half Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 A
|
|
- Adela Hancock
- 6 years ago
- Views:
Transcription
1 VS-GPTS6SFPbF Half Bridge IGBT INT-A-PAK, (Trench PT IGBT), A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al 2 O 3 DBC UL pending Designed for industrial level Material categorization: for definitions of compliance please see INT-A-PAK PRIMARY CHARACTERISTICS V CES 6 V I C DC, T C = 3 C A V CE(on) at A, 25 C.6 V Speed DC to khz Package INT-A-PAK Circuit configuration Half bridge BENEFITS Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Very low junction to case thermal resistance Low EMI ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 25 C 337 Continuous collector current I C T C = 8 C 235 A Pulsed collector current I CM 44 Peak switching current I LM 44 Gate to emitter voltage V GE ± 2 RMS isolation voltage V ISOL Any terminal to case, t = min 25 V T C = 25 C 78 Maximum power dissipation P D T C = C 32 W Operating junction temperature range T J -4 to +5 Storage temperature range T Stg -4 to +25 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa Collector to emitter voltage V CE(on) V GE = 5 V, I C = 2 A V V GE = 5 V, I C = A V GE = 5 V, I C = A, Gate threshold voltage V GE(th) V CE = V GE, I C = 3.2 ma Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = 3.2 ma, (25 C to 25 C) mv/ C Forward transconductance g fe V CE = 2 V, I C = 5 A S Transfer characteristics V GE V CE = 2 V, I C = A V V GE = V, V CE = 6 V -. 5 Collector to emitter leakage current I CES V GE = V, V CE = 6 V, μa I C = A, V GE = V Diode forward voltage drop V FM I C = A, V GE = V, V Gate to emitter leakage current I GES V GE = ± 2 V - - ± 5 na Revision: 2-Sep-7 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VS-GPTS6SFPbF SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q g I C = A, Gate to emitter charge Q ge V CC = 4 V nc Gate to collector charge Q gc Turn-on switching energy E on -. - Turn-off switching energy E off mj I C = A, Total switching energy E ts V CC = 3 V, Turn-on delay time t d(on) V GE = 5 V, L = 5 μh Rise time t R g = 3.3, r Turn-off delay time t d(off) ns Fall time t f Turn-on switching energy E on Turn-off switching energy E off mj I C = A, Total switching energy E ts V CC = 3 V, Turn-on delay time t d(on) V GE = 5 V, L = 5 μh Rise time t R g = 3.3, r Turn-off delay time t d(off) ns Fall time t f Reverse bias safe operating area RBSOA T J = 5 C, I C = 44 A, V CC = 3 V, V p = 6 V, R g = 3.3, Fullsquare V GE = 5 V to V, L = 5 μh Diode reverse recovery time t rr IF = 5 A, ns Diode peak reverse current I rr di F /dt = 2 A/μs, - - A Diode recovery charge Q rr V rr = 2 V nc Diode reverse recovery time t rr IF = 5 A, ns Diode peak reverse current I rr di F /dt = 2 A/μs, A Diode recovery charge Q rr V rr = 2 V, nc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction temperature range T J -4-5 C Storage temperature range T Stg per switch Junction to case R thjc per diode C/W Case to sink per module R thcs -. - case to heatsink Mounting torque Nm case to terminal, 2, Weight g Revision: 2-Sep-7 2 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VS-GPTS6SFPbF Allowable Case Temperature ( C) DC V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V I C - Continuous Collector Current (A) V CE (V) Fig. - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 4 - Typical IGBT Output Characteristics, A.3 V CE (V).2. A..9 5 A.8. V CE (V) Fig. 2 - IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V T J ( C) Fig. 5 - Collector to Emitter Voltage vs. Junction Temperature 3 V CE = 2 V T J = 5 C V CE (V) V GE (V) Fig. 3 - Typical IGBT Output Characteristics, V GE = 5 V Fig. 6 - Typical IGBT Transfer Characteristics Revision: 2-Sep-7 3 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VS-GPTS6SFPbF V GE (V) V CC = 4 V I C = A Allowable Case Temperature ( C) DC Q g (nc) I F - Continuous Forward Current (A) Fig. 7 - Typical Total Gate Charge vs. Gate to Emitter Voltage Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature T J = 5 C V GEth (V) I F (A) I C (ma) V FM (V) Fig. 8 - Typical IGBT Gate Threshold Voltage Fig. - Typical Diode Forward Characteristics 25 T J = 5 C 2 I CES (ma).... Energy (mj) 5 5 Eoff Eon V CES (V) Fig. 9 - Typical IGBT Zero Gate Voltage Collector Current Fig. 2 - Typical IGBT Energy Loss vs. I C, V CC = 3 V, R g = 3.3, V GE = 5 V, L = 5 μh Revision: 2-Sep-7 4 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VS-GPTS6SFPbF Switching Time (ns) t f t d(off) t d(on) t r t rr (ns) di F /dt (A/μs) Fig. 3 - Typical IGBT Switching Time vs. I C, V CC = 3 V, R g = 3.3, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 2 V, I F = 5 A 2 4 Energy (mj) Eoff Eon I rr (A) R g (Ω) di F /dt (A/μs) Fig. 4 - Typical IGBT Energy Loss vs. R g, V CC = 3 V, I C = A, V GE = 5 V, L = 5 μh Fig. 7 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 2 V, I F = 5 A Switching Time (ns) t f t d(off) t d(on) t r Q rr (nc) R g (Ω) di F /dt (A/μs) Fig. 5 - Typical IGBT Switching Time vs. R g, V CC = 3 V, I C = A, V GE = 5 V, L = 5 μh Fig. 8 - Typical Diode Reverse Recovery Charge vs. di F /dt) V rr = 2 V, I F = 5 A Revision: 2-Sep-7 5 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VS-GPTS6SFPbF Z thjc - Thermal Impedance Junction to Case ( C/W) DC t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics - (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W) DC t - Rectangular Pulse Duration (s) Fig. 2 - Maximum Thermal Impedance Z thjc Characteristics - (Diode)) ORDERING INFORMATION TABLE Device code VS- GP T S 6 S F PbF product 2 - IGBT die technology (GP = trench PT) 3 - Current rating ( = A) 4 - Circuit configuration (T = half bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage code (6 = 6 V) 7 - Speed/type (S = standard speed IGBT) 8 - Diode type 9 - None = standard production; PbF = Lead (Pb)-free Revision: 2-Sep-7 6 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 VS-GPTS6SFPbF CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: 2-Sep-7 7 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 DIMENSIONS in millimeters (inches) INT-A-PAK IGBT Outline Dimensions (.67) 23 (.9) 23 (.9) (.56) 5 (.2) 35 (.38) 4.5 (.57) (.8) 9 (.33) 28 (.) 29 (.5) 7 (.28) Ø 6.5 (Ø.25) 2.8 x.8 (. x.3) 8 (3.5) 3 screws M6 x 66 (2.6) 94 (3.7) 37 (.44) Revision: 27-Mar-3 Document Number: 9573 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
More informationDual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 4 A VS-GA4TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A
Insulated Gate Bipolar Transistor (Trench IGBT), 65 V, A VS-GTDA65U SOT-7 PRIMARY CHARACTERISTICS V CES 65 V I C DC A at 9 C V CE(on) typical at A, 5 C.7 V I F DC 76 A at 9 C Speed 8 khz to 3 khz Package
More informationInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A
VS-GP5SA6S Insulated Gate Bipolar Transistor Trench PT IGBT, 6 V, 5 A Proprietary Vishay IGBT Silicon L Series SOT-7 PRIMARY CHARACTERISTICS V CES 6 V I C DC () 39 A at 9 C V CE(on) typical at A, 5 C.
More informationLow Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 140 A
Insulated Gate Bipolar Transistor (Trench IGBT), 4 A VS-GT4DA6U PRODUCT SUMMARY SOT-7 V CES 6 V I C DC 4 A at 9 C () V CE(on) typical at A, 5 C.7 V I F DC 7 A at 9 C Speed 8 khz to 3 khz Package SOT-7
More informationEMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 5 A VS-ETF5Y5N EMIPAK-B (package example) PRIMARY CHARACTERISTICS Q to Q IGBT V CES 5 V V CE(on) typical at I C = 5 A.7 V I C at T C =
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 180 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C(DC) 85 A at 9 C V CE(on) typical at A, 5 C.55 V I F(DC) 3 A at 9 C Speed 8 khz to 3 khz Package
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 80 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
More informationEMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A
EMIPAK-B PressFit Power Module -Levels Half-Bridge Inverter Stage, 5 A VS-ETF5Y65U EMIPAK-B (package example) PRODUCT SUMMARY Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = A.7 V Q - Q IGBT STAGE
More informationINT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A
INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 2 A VS-GA2HSS1PbF INT-A-PAK PRIMARY CHARACTERISTICS V CES V I C DC 8 A V CE(on) at 2 A, 25 C 1.13 V Speed DC to 1 khz Package INT-A-PAK Circuit configuration
More informationDual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A
VS-GT3FD6N Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 3 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9DAU SOT-7 PRODUCT SUMMARY V CES V I C DC 9 A at 9 C V CE(on) typical at 75 A, 5 C 3.3 V Speed 8 khz to 3 khz Package SOT-7 Circuit Single switch
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
More informationMTP IGBT Power Module Primary Dual Forward
MTP IGBT Power Module Primary Dual Forward VS5MTWDF MTP (Package example) PRIMARY CHARACTERISTICS IGBT, T J = 5 C V CES V V CE(on) at 25 C at 8 A 2. V I C at 8 C 9 A FRED Pt AP DIODE, T J = 5 C V RRM V
More informationIGBT ECONO3 Module, 150 A
IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature
More informationIGBT ECONO3 Module, 100 A
IGBT ECONO3 Module, A VS-GBYGNT ECONO 3 4 pack PRIMARY CHARACTERISTICS V CES V V CE(on) typ. at A 3.52 V I C(DC) at T C = 64 C A Package ECONO 3 Circuit configuration 4 pack with thermistor FEATURES Gen
More informationEMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 75 A VS-ETF75Y6U EMIPAK B (package example) PRIMARY CHARACTERISTICS Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.7 V I C
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch
More information"High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A
"High Side Chopper" IGBT SOT-227 (Trench IGBT), A FEATURES Trench IGBT technology VS-GTNA2UX SOT-227 PRODUCT SUMMARY V CES 2 V I C DC A at 7 C V CE(on) typical at A, 25 C 2.36 V Package SOT-227 Circuit
More informationInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
More informationEMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A
EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 3 A VS-ENQ3L1S EMIPAK-1B (package example) PRODUCT SUMMARY TRENCH IGBT 1 V STAGE V CES 1 V V CE(ON) typical at I C = 3 A 2.12 V I C at T C
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 100 A
PRODUCT SUMMARY SOT-227 V CES 6 V I C DC A at 7 C V CE(on) typical at A, 25 C.72 V I F DC A at 25 C Insulated Gate Bipolar Transistor (Trench IGBT), A FEATURES GTDA6U Trench IGBT technology with positive
More informationInsulated Gate Bipolar Transistor Ultralow V CE(on), 250 A
Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 175 A
Insulated Gate Bipolar Transistor (Trench IGBT), 75 A VS-GT75DAU PRODUCT SUMMARY SOT-7 V CES V I C(DC) 75 A at 9 C () V CE(on) typical at A, 5 C.73 V I F(DC) 3 A at 9 C Package SOT-7 Circuit Single Switch
More informationMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A
Molding Type Module IGBT, Chopper in 1 Package, 12 V and 3 A VS-GB3NH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK
More informationMolding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A
Molding Type Module IGBT, 2 in 1 Package, 12 V, 1 A FEATURES VS-GB1TP12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 1 A, C Speed Package Circuit configuration INT-A-PAK
More informationMolding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15
More informationHalf Bridge IGBT Power Module, 600 V, 100 A
Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge
More informationFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
More informationHalf Bridge IGBT MTP (Warp Speed IGBT), 114 A
Half Bridge IGBT MTP (Warp Speed IGBT), 4 A MTP PRIMARY CHARACTERISTICS V CES 6 V V CE(on) typical at V GE = 5 V 2.3 V I C at T C = 25 C 4 A Speed 3 khz to khz Package MTP Circuit configuration Half bridge
More informationPrimary MTP IGBT Power Module
Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83
More informationFull Bridge IGBT MTP (Warp Speed IGBT), 50 A
Full Bridge IGBT MTP (Warp Speed IGBT), 50 A MTP PRIMARY CHARACTERISTICS V CES 600 V DC 69 A V CE(on) 2.22 V Speed 8 khz to 30 khz Package MTP Circuit configuration Full bridge FEATURES Gen 4 warp speed
More information"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
INT-A-PAK "Half-Bridge" IGBT INT-A-PAK FEATURES Vishay High Power Products Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 khz to 4 khz in hard switching, > 2 khz in resonant mode Very
More informationMolding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 1-in-1 Package, 12 V and 3 A FEATURES VS-GB3AH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual
More informationFRED Pt Gen 4 Single Ultrafast Diode, 500 A (INT-A-PAK Power Modules)
FRED Pt Gen 4 Single Ultrafast Diode, 5 A (INT-A-PAK Power Modules) VS-VSKEF5/6PbF INT-A-PAK PRODUCT SUMMARY V R 6 V I F(AV) at T C 5 A at 55 C t rr at 4 ns Type Modules - diode, high voltage Package INT-A-PAK
More informationHEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules)
HEXFRED Ultrafast Diodes, A (INT-A-PAK Power Modules) INT-A-PAK PRIMARY CHARACTERISTICS V R 1200 V V F (typical) 2.5 V t rr (typical) 150 ns I F(DC) at T C 110 A at C Package INT-A-PAK Circuit configuration
More informationHEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)
HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules) INT-A-PAK PRIMARY CHARACTERISTICS V R 1200 V V F (typical) at 300 A at 2.18 V t rr (typical) at 45 A 233 ns I F(DC) at T C 300 A at 60 C Package
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
Not Available for New Designs, Use VSGB9SAU Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A VSGB75SAUP SOT7 PRODUCT SUMMARY V CES V I C DC 75 A at 95 C V CE(on) typical at 75 A, 5 C 3.3 V Package
More informationInsulated Gen 2 Schottky Rectifier Module, 300 A
VS-QA3FA17 Insulated Gen 2 Schottky Rectifier Module, 3 A PRIMARY CHARACTERISTICS I F(AV) per module at T C = 132 C V R V FM at A, T C = 25 C Package Circuit configuration SOT-227 3 A 17 V.79 V SOT-227
More information"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A
"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), A MTP PRODUCT SUMMARY V CES I C DC V CE(on) 6 V A.68 V FEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverse recovery
More informationSOT-227 Power Module Single Switch - Power MOSFET, 420 A
SOT-7 Power Module Single Switch - Power MOSFET, 4 A FEATURES I D > 4 A, T C = 5 C TrenchFET power MOSFET VS-FC4SA SOT-7 PRIMARY CHARACTERISTICS V DSS V R DS(on).3 I () D 33 A at 9 C Type Modules - MOSFET
More informationIGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
More informationHEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)
HEXFRED Ultrafast Diodes, 3 A (INTAPAK Power Modules) VSVSKCU3/6PbF INTAPAK PRIMARY CHARACTERISTICS V R 6 V V F (typical).23 t rr (typical) 3 ns I F(AV) at T C 3 A at 48 C Package INTAPAK Circuit configuration
More informationInsulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
More informationInsulated Ultrafast Rectifier Module, 230 A
Insulated Ultrafast Rectifier Module, 23 A SOT-227 PRIMARY CHARACTERISTICS V R 6 V I F(AV) per module at T C = 88 C 23 A t rr 43 ns Type Modules - diode FRED Pt Package SOT-227 FEATURES Two fully independent
More informationInsulated Ultrafast Rectifier Module, 280 A
Insulated Ultrafast Rectifier Module, 280 A SOT-227 PRIMARY CHARACTERISTICS V R 200 V I F(AV) per module at T C = C 280 A t rr 45 ns Type Modules - diode FRED Pt Package SOT-227 FEATURES Two fully independent
More informationHEXFRED Ultrafast Soft Recovery Diode, 275 A
HEXFRED Ultrafast Soft Recovery Diode, 275 A VS-HFA135NH4PbF HALF-PAK (D-67) Lug terminal anode Base cathode PRIMARY CHARACTERISTICS I F (maximum) 275 A V R 4 V I F(DC) at T C 138 A at C Package HALF-PAK
More informationVS-EBU15006-F4. FRED Pt Ultrafast Soft Recovery Diode, 150 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY
VS-EBU5006-F4 FRED Pt Ultrafast Soft Recovery Diode, 50 A PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only Designed and qualified according
More informationInsulated Hyperfast Rectifier Module, 280 A
Insulated Hyperfast Rectifier Module, 28 A FEATURES PRIMARY CHARACTERISTICS V R 3 V I F(AV) per module at T C = 8 C 28 A t rr 58 ns Type Modules - Diode FRED Pt Package SOT-227 Circuit configuration SOT-227
More informationInsulated Ultrafast Rectifier Module, 280 A
Insulated Ultrafast Rectifier Module, 8 A SOT-7 PRIMARY CHARACTERISTICS V R 4 V I F(AV) per module at T C = 9 C 8 A t rr 4 ns Type Modules - diode FRED Pt Package SOT-7 FEATURES Two fully independent diodes
More informationInsulated Single Phase Hyperfast Bridge (Power Modules), 60 A
Insulated Single Phase Hyperfast Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 65 V I O at T C = 123 C 6 A t rr 63 ns Type Modules - Bridge, Hyperfast Package SOT-227 Circuit configuration
More informationUltrafast Soft Recovery Diode, 150 A FRED Pt
Ultrafast Soft Recovery Diode, 50 A FRED Pt Cathode Anode PowerTab PRIMARY CHARACTERISTICS I F(AV) 50 A V R 200 V V F at I F 0.77 V t rr (typ.) See recovery table T J max. 75 C Package PowerTab Circuit
More informationHEXFRED Ultrafast Soft Recovery Diode, 220 A
HEXFRED Ultrafast Soft Recovery Diode, A VS-HFAFA SOT-7 PRIMARY CHARACTERISTICS V R V V F (typical).68 V t rr (typical) 58 ns I F(AV) per module at T C A at 38 C Package SOT-7 FEATURES Fast recovery time
More informationUltrafast Soft Recovery Diode, 150 A FRED Pt
Ultrafast Soft Recovery Diode, 50 A FRED Pt PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only AEC-Q0 qualified PowerTab package Material
More informationHEXFRED Ultra Fast Soft Recovery Diode, 210 A
HEXFRED Ultra Fast Soft Recovery Diode, 20 A FEATURES VS-HFA20NJ60CPbF Lug terminal anode Lug terminal anode 2 Very low Q rr and t rr UL approved file E22265 Designed and qualified for industrial level
More informationHEXFRED Ultrafast Soft Recovery Diode, 240 A
HEXFRED Ultrafast Soft Recovery Diode, 24 A FEATURES VS-HFA24NJ4CPbF Lug terminal anode Lug terminal anode 2 Very low Q rr and t rr UL approved file E22265 Designed and qualified for industrial level Material
More informationHEXFRED Ultrafast Soft Recovery Diode, 140 A
HEXFRED Ultrafast Soft Recovery Diode, 4 A VS-HFA4FA SOT-7 PRIMARY CHARACTERISTICS V R V V F (typical).8 V t rr (typical) 48 ns I F(DC) at T C, per module 4 A at 74 C I F(AV) at T C, per module 4 A at
More informationUltrafast Rectifier, 2 x 30 A FRED Pt
Ultrafast Rectifier, x 3 A FRED Pt 3 TO-47 long lead 3-pins PRODUCT SUMMARY Anode Base common cathode Common cathode Package TO-47 long lead 3-pins I F(AV) x 3 A V R 6 V V F at I F.75 V t rr typ. 6 ns
More informationHEXFRED Ultrafast Soft Recovery Diode, 167 A
HEXFRED Ultrafast Soft Recovery Diode, 67 A FEATURES Lug terminal anode Lug terminal anode 2 Very low Q rr and t rr UL approved file E22265 Designed and qualified for industrial level Material categorization:
More informationInsulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 1 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
More informationHyperfast Rectifier, 30 A FRED Pt
VS-3ETH6FP-F3, VS-3ETH6FP-N3 Hyperfast Rectifier, 3 A FRED Pt FEATURES 2 TO-22 FullPAK 3 Cathode Base cathode 2 3 Anode Reduced Q rr and soft recovery 75 C T J maximum For PFC CRM/CCM operation Fully isolated
More informationSingle Phase Rectifier Bridge, 1.9 A
Single Phase Rectifier Bridge, 1.9 A PRIMARY CHARACTERISTICS I O 1.9 A V RRM 5 V to 1 V Package Circuit configuration Single phase bridge FEATURES Suitable for printed circuit board mounting Leads on standard
More informationUltrafast Rectifier, 20 A FRED Pt
Ultrafast Rectifier, 20 A FRED Pt 2 2L TO-220 FULL-PAK Cathode PRODUCT SUMMARY 2 Anode Package 2L TO-220FP I F(AV) 20 A V R 600 V V F at I F.26 V t rr (typ.) 6 ns T J max. 75 C Diode variation Single die
More informationSingle Phase Bridge Rectifier, 2 A
Single Phase Bridge Rectifier, 2 A FEATURES Suitable for printed circuit board mounting Compact construction High surge current capability Material categorization: for definitions of compliance please
More informationHigh Performance Schottky Rectifier, 240 A
High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) Lug terminal anode Base cathode FEATURES 175 C T J operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
More informationComplementary N- and P-Channel 40-V (D-S) MOSFET
Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -
More informationThree phase bridge. (Power Module), 200 A
Three Phase Bridge (Power Module), 2 A VS-2MT4KPbF MTK PRIMARY CHARACTERISTICS I O 2 A V RRM 4 V Package MTK Circuit configuration Three phase bridge FEATURES Package fully compatible with the industry
More informationUltrafast Rectifier, 20 A FRED Pt
Ultrafast Rectifier, 20 A FRED Pt 2 2L TO-220 FullPAK FEATURES Low forward voltage drop Ultrafast soft recovery time 75 C operating junction temperature Low leakage current Fully isolated package (V INS
More informationHyperfast Rectifier, 16 A FRED Pt
Hyperfast Rectifier, 6 A FRED Pt 2 K Top View Bottom View SMPD (TO-263AC) K Anode Cathode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationHigh Performance Schottky Rectifier, 400 A
High Performance Schottky Rectifier, 4 A TO-244 Lug terminal anode Lug terminal anode 2 Base common cathode FEATURES 75 C T J operation Center tap module Low forward voltage drop High frequency operation
More informationSingle Phase Rectifier Bridge, 1.2 A
Single Phase Rectifier Bridge, 1.2 A FEATURES VS-1KAB-E Series Ease of assembly, installation, inventory High surge rating Compact Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
More informationN-Channel 150-V (D-S) MOSFET
N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
More informationHyper Fast Rectifier, 2 x 3 A FRED Pt
Hyper Fast Rectifier, 2 x 3 A FRED Pt 8 7 6 5 FlatPAK 5 x 6 2 3 4 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Low forward voltage drop
More informationPower Rectifier Diodes (T-Modules), 2200 V, 20 A
Power Rectifier Diodes (T-Modules), 2200 V, 20 A FEATURES Electrically isolated base plate 2200 V RRM Industrial standard packaging UL approved file E78996 Simplified mechanical designs, rapid assembly
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET 3.3 mm Top View PRODUCT SUMMARY PowerPAK 22-8 Dual 3.33 mm D 2 D 2 6 5 4 G Bottom View V DS (V) 3 R DS(on) max. (Ω) at V GS = 4.5 V.22 R DS(on) max. (Ω) at V GS = 2.5 V.26 Q
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationHyper Fast Rectifier, 2 x 4 A FRED Pt
Hyper Fast Rectifier, 2 x 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified
More informationHyperfast Rectifier, 6 A FRED Pt
Hyperfast Rectifier, 6 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
More informationFast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A
VS-6FL(R), VS-2FL(R), VS-6FL(R) Series Fast Recovery Diodes (Stud Version), 6 A, 2 A, 6 A DO-23AA (DO-4) FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities
More informationHyperfast Rectifier, 1 A FRED Pt
Hyperfast Rectifier, A FRED Pt VS-EMH0HM3 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output and snubber operation Low forward
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUA76E PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.).6 at V GS = V 56.6.7 at V GS = 7.5 V 54.4 53.5 nc Thin-Lead TO-22 FULLPAK FEATURES ThunderFET power MOSFET Q
More informationUltrafast Rectifier, 4 A FRED Pt
Ultrafast Rectifier, 4 A FRED Pt Cathode Anode SMB (DO-24AA) PRIMARY CHARACTERISTICS I F(AV) 4 A V R 600 V V F at I F 0.94 V t rr typ. 45 ns T J max. 75 C Package SMB (DO-24AA) Circuit configuration Single
More informationFast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A
VS-4HFL, VS-7HFL, VS-85HFL Series Fast Recovery Diodes (Stud Version), 4 A, 7 A, 85 A FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Stud cathode
More informationHyper Fast Rectifier, 2 x 2 A FRED Pt
Hyper Fast Rectifier, 2 x 2 A FRED Pt VS-4CSH02HM3 K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyper fast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
More informationStandard Recovery Diodes, 400 A
VS-VSMD4AW6, VS-VSMD4CW6 Standard Recovery Diodes, 4 A PRIMARY CHARACTERISTICS I F(AV) per module 4 A Type Modules - diode, high voltage Package TO-244 Circuit configuration TO-244 Two diodes common anode,
More informationN- and P-Channel 2.5-V (G-S) MOSFET
N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available
More informationN-Channel 200 V (D-S) 175 C MOSFET
N-Channel 2 V (D-S) 75 C MOSFET SUP942E TO-22AB S D Top View G PRODUCT SUMMARY V DS (V) 2 R DS(on) max. ( ) at V GS = V.52 R DS(on) max. ( ) at V GS = 7.5 V.69 Q g typ. (nc) 58 I D (A) 9 Configuration
More informationPower MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
More informationUltrafast Rectifier, 16 A FRED Pt
Ultrafast Rectifier, 6 A FRED Pt 2 K Top View Bottom View K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature For PFC CRM,
More informationHyperfast Rectifier, 5 A FRED Pt
Hyperfast Rectifier, 5 A FRED Pt VS-5ECH6-M3 SMC (DO-24AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr and soft recovery 75 C maximum operating junction temperature For PFC CRM/CCM, snubber
More informationHyperfast Rectifier, 4 A FRED Pt
Hyperfast Rectifier, 4 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output
More informationHyper Fast Rectifier, 2 x 4 A FRED Pt
Hyper Fast Rectifier, 2 x 4 A FRED Pt VS-8CVH0HM3 2 3 SlimDPAK (TO-252AE) Base common cathode 4 2 Common cathode 3 Anode Anode PRODUCT SUMMARY Package SlimDPAK (TO-252AE) I F(AV) 2 x 4 A V R V V F at I
More informationHyperfast Rectifier, 3 A FRED Pt
Hyperfast Rectifier, 3 A FRED Pt VS-3EJH0HM3 Top View SlimSMA (DO-22AC) Cathode esmp Series DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV)
More informationAutomotive N-Channel 200 V (D-S) 175 C MOSFET
Automotive N-Channel 2 V (D-S) 75 C MOSFET SQM942E FEATURES TO-263 Top View G D S TrenchFET power MOSFET Package with low thermal resistance AEC-Q qualified % R g and UIS tested Material categorization:
More informationN-Channel 12 V (D-S) MOSFET
N-Channel 2 V (D-S) MOSFET SiUD42ED.4 mm PowerPAK 86 Single D 3 FEATURES TrenchFET power MOSFET Ultra small.8 mm x.6 mm outline Ultra thin.4 mm max. height Typical ESD protection 5 V (HBM).8 mm Top View.6mm
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration
More information