SOT-227 Power Module Single Switch - Power MOSFET, 420 A

Transcription

1 SOT-7 Power Module Single Switch - Power MOSFET, 4 A FEATURES I D > 4 A, T C = 5 C TrenchFET power MOSFET VS-FC4SA SOT-7 PRIMARY CHARACTERISTICS V DSS V R DS(on).3 I () D 33 A at 9 C Type Modules - MOSFET Package SOT-7 Low input capacitance (C iss) Reduced switching and conduction losses Ultra low gate charge (Q g ) Avalanche energy rated (U IS ) UL approved file E78996 Material categorization: for definitions of compliance please see ABSOLUTE MAXIMUM RATINGS (T C = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MOSFET Drain to source voltage V DSS V Continuous drain current, V GS at V I () T C = 5 C 435 D T C = 9 C 33 A Pulsed drain current I () DM 3 Power dissipation P D T C = 5 C 65 W Gate to source voltage V GS ± V Single pulse avalanche energy E AS T C = 5 C, L = mh, V GS = V.5 J Single pulse avalanche current I AS T C = 5 C, L = mh, V GS = V 48 A MODULE Insulation voltage (RMS) V ISOL any terminal to case, t = min 5 V Operating junction temperature range T J -55 to +75 C Notes () Maximum continuous current admitted A to do not overcome the maximum temperature of terminals () Limited at maximum junction temperature Revision: 7-Sep-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-FC4SA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg C Junction to case MOSFET R thjc Case to heat sink Module R thcs Flat, greased surface -. - C/W Weight g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink (5.9) Nm (lbf.in) Case style SOT-7 ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V (BR)DSS V GS = V, I D = 75 μa - - V Static drain to source on-resistance R DS(on) V GS = V, I D = A m Gate threshold voltage V GS(th) V DS = V GS, I D = 75 μa V Forward transconductance g fs V DS = V, I D = A, V GS = V S V DS = V, V GS = V Drain to source leakage current I DSS V DS = V, V GS = V, T J = 5 C μa Gate to source leakage I GSS V GS = ± V - - ± 35 na Total gate charge Q g ID = A Gate to source charge Q gs V DS = 5 V nc Gate to drain ( Miller ) charge Q gd V GS = V Turn-on delay time t d(on) V DD = 5 V Rise time t r I D = A Turn-off delay time t d(off) R g = V GS = V Fall time t f ns Input capacitance C iss VGS = V Output capacitance C oss V DS = 5 V nf Reverse transfer capacitance C rss f = MHz SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Continuous source current (body diode) Pulsed source current (body diode) I S I SM MOSFET symbol showing the integral reverse p-n junction G diode D S A Diode forward voltage V SD I S = A, V GS = V V Reverse recovery time t rr ns Reverse recovery charge Q rr T J = 5 C, I F = I S = 5 A, di/dt = A/μs, V R = 5 V nc Reverse recovery current I RM A Revision: 7-Sep-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-FC4SA Allowable Case Temperature ( C) DC R DS(on) - Drain-to-Source On-Resistance (mω).6 V GS = V.4. I D = A I D - Continuous Drain Current (A) T J ( C) Fig. - Maximum Continuous Drain Current vs. Case Temperature Fig. 4 - Typical Drain-to-Source On-Resistance vs. Temperature 4 35 V GS = V thru 7 V 4 35 V DS = V 3 5 V GS = 5 V 3 5 T J = 75 C 5 5 T J = 5 C T J = 5 C V DS (V) V GS (V) Fig. - Typical Drain to Source Current Output Characteristics at T J = 5 C Fig. 5 - Typical Transfer Characteristics V GS = V V GS = 9 V V GS = 8 V V GS = 7 V V GS = 6 V V GS = 5 V V GSth (V) T J = 5 C T J = 5 C T J = 75 C V DS (V) I D (ma) Fig. 3 - Typical Drain to Source Current Output Characteristics at T J = 5 C Fig. 6 - Typical Gate Threshold Voltage Characteristics Revision: 7-Sep-7 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-FC4SA T J =5 C 8 6 t d(off) at 5 C R DS(on) (mω) I D = A Turn-Off Time (ns) t d(off) at 5 C t f at 5 C t f at 5 C V GS (V) Fig. 7 - Typical Drain-State Resistance vs. Gate-to-Source Voltage Fig. - Typical Turn off Switching Time vs. I d V DD = 5 V, R g =., V GS = ± V, L = 5 μh 4 3 I S (A) T J = 75 C T J = 5 C T J = 5 C Turn-On Time (ns) t r at 5 C t r at 5 C t d(on) at 5 C t d(on) at 5 C V SD (V) Fig. 8 - Typical Body Diode Source-to-Drain Current Characteristics Fig. - Typical Turn-on Switching Time vs. I d V DD = 5 V, R g =., V GS = ± V, L = 5 μh I DSS (ma) T J = 75 C. T J = 5 C.. T J = 5 C P D - Power Dissipation (W) V DSS (V) T J ( C) Fig. 9 - Typical Zero Gate Voltage Drain Current Fig. - Power Dissipation Curve Revision: 7-Sep-7 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-FC4SA Z thjc - Thermal Impedance Junction to Case ( C/W) DC t - Rectangular Pulse Duration (s) Fig. 3 - Maximum Thermal Impedance Junction-to-Case Characteristics I DS - Drain-Source Current (A) Limited by R DS (ON) T C = 5 C t p = ms t p = μs T J = 75 C Single Pulse BV DSS Limited.. V DS - Drain-Source Voltage (V) t p = 5 μs Fig. 4 - Safe Operating Area ORDERING INFORMATION TABLE Device code VS- F C 4 S A product - MOSFET module - MOSFET die generation - Current rating (4 = 4 A) - Circuit configuration (S = single switch) - Package indicator (SOT-7 standard insulated base) - Voltage rating ( = V) Quantity per tube is, M4 screw and washer included Revision: 7-Sep-7 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-FC4SA CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D(3) 3 (D) (G) G() S(-4) Single switch S Lead Assignment (S) (D) (S) (S) (S) (G) Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 7-Sep-7 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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