Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
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1 Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS V CES 6 V I C DC at T C = 25 C 53 A V CE(on) (typical) at 3 A, 25 C.24 V Speed DC to khz Package Dual INT-A-PAK low profile Circuit configuration Half bridge Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al 2 O 3 DBC UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance please see BENEFITS Increased operating efficiency Performance optimized as output inverter stage for TIG welding machines Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V Continuous collector current I () T C = 25 C 53 C T C = 8 C 376 Pulsed collector current I CM 8 Clamped inductive load current I LM 8 A T C = 25 C 29 Diode continuous forward current I F T C = 8 C 45 Gate to emitter voltage V GE ± 2 V T C = 25 C 36 Maximum power dissipation (IGBT) P D T C = 8 C 636 W Any terminal to case RMS isolation voltage V ISOL (V RMS t = s, ) 35 V Note () Maximum continuous collector current must be limited to 5 A to do not exceed the maximum temperature of terminals Revision: -Dec-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VS-GA3TD6S ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa V GE = 5 V, I C = 5 A Collector to emitter voltage V CE(on) V GE = 5 V, I C = 3 A V GE = 5 V, I C = 5 A, V V GE = 5 V, I C = 3 A, Gate threshold voltage V GE(th) V CE = V GE, I C = 25 μa V GE = V, V CE = 6 V Collector to emitter leakage current I CES V GE = V, V CE = 6 V, -.5 ma I FM = 5 A Diode forward voltage drop V FM I FM = 3 A I FM = 5 A, V I FM = 3 A, Gate to emitter leakage current I GES V GE = ± 2 V - - ± 2 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on I C = 3 A, V CC = 36 V, V GE = 5 V, Turn-off switching loss E off R g =.5, L = 5 μh, Total switching loss E tot mj Turn-on switching loss E on Turn-off switching loss E off Total switching loss E tot I C = 3 A, V CC = 36 V, V GE = 5 V, Turn-on delay time t d(on) R g =.5, L = 5 μh, Rise time t r ns Turn-off delay time t d(off) Fall time t f Reverse bias safe operating area RBSOA T J = 5 C, I C = 8 A, V CC = 4 V V P = 6 V, R g = 22 V GE = 5 V to V, L = 5 μh Fullsquare Diode reverse recovery time t rr ns I F = 3 A, di F /dt = 5 A/μs, Diode peak reverse current I rr A V CC = 4 V, Diode recovery charge Q rr μc Diode reverse recovery time t rr ns I F = 3 A, di F /dt = 5 A/μs, Diode peak reverse current I rr A V CC = 4 V, Diode recovery charge Q rr μc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction and storage temperature range T J, T Stg -4-5 C Junction to case per leg IGBT - -. R thjc Diode C/W Case to sink per module R thcs Mounting torque case to heatsink: M6 screw 4-6 case to terminal, 2, 3: M5 screw 2-5 Nm Weight g Revision: -Dec-7 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VS-GA3TD6S 93362_ V CE (V) Fig. - Typical Output Characteristics,, V GE = 5 V V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V V CE (V) 93362_ Fig. 4 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V V CE = 2 V 4 A 5 A T J ( C) 3 A _2 Allowable Case Temperature ( C) 93362_ V CE (V) Fig. 2 - Typical Output Characteristics, DC I C - Continuous Collector Current (A) Fig. 3 - Maximum DC IGBT Collector Current vs. Case Temperature 93362_5 V geth (V) 93362_ V GE (V) Fig. 5 - Typical IGBT Transfer Characteristics I C (ma) Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: -Dec-7 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VS-GA3TD6S 93362_7 V CE (V) Fig. 7 - IGBT Reverse Bias SOA, T J = 5 C, V GE = 5 V, R g = 22 Allowable Case Temperature ( C) DC _ I F - Continuous Forward Current (A) Fig. - Maximum DC Forward Current vs. Case Temperature 5 I CES (ma).. Energy (mj) E off E on 93362_ V CES (V) Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current _ Fig. - Typical IGBT Energy Loss vs. I C,, V CC = 36 V, R g =.5, V GE = 5 V, L = 5 μh I F (A) 93362_ V FM (V) Fig. 9 - Typical Diode Forward Characteristics Switching Time (ns) 93362_2 t d(on) t d(off) Fig. 2 - Typical IGBT Switching Time vs. I C,, V CC = 36 V, R g =.5, V GE = 5 V, L = 5 μh t f t r Revision: -Dec-7 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VS-GA3TD6S Energy (mj) 93362_3 Switching Time (ns) _4 E off E on R g (Ω) Fig. 3 - Typical IGBT Energy Loss vs. R g,, I C = 3 A, V CC = 36 V, V GE = 5 V, L = 5 μh t f t d(off) t r R g (Ω) t d(on) Fig. 4 - Typical IGBT Switching Time vs. R g,, I C = 3 A, V CC = 36 V, V GE = 5 V, L = 5 μh t rr (ns) 93362_5 I rr (A) 93362_ di F /dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt, V CC = 4 V, I F = 3 A di F /dt (A/µs) Fig. 6 - Typical Reverse Recovery Current vs. di F /dt, V CC = 4 V, I F = 3 A Q rr (μc) 93362_ T J = 25 C di F /dt (A/μs) Fig. 7 - Typical Reverse Recovery Charge vs. di F /dt, V CC = 4 V, I F = 3 A Revision: -Dec-7 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VS-GA3TD6S Z thjc - Thermal Impedance Junction to Case ( C/W) 93362_8.... D =.5 D =.2 D =. D =.5 D =.2 D =. DC.... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 93362_ t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) ORDERING INFORMATION TABLE Device code G A 3 T D 6 S Insulated gate bipolar transistor (IGBT) 2 - A = Gen 4 IGBT 3 - Current rating (3 = 3 A) 4 - Circuit configuration (T = half bridge) 5 - Package indicator (D = dual INT-A-PAK low profile) 6 - Voltage rating (6 = 6 V) 7 - Speed / type (S = standard speed IGBT) Revision: -Dec-7 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 VS-GA3TD6S CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: -Dec-7 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
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