Half Bridge IGBT Power Module, 600 V, 100 A

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1 Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge FEATURES Low V CE(on) trench IGBT technology 5 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 75 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS UPS (Uninterruptable Power Supply) Switching mode power supplies Electronic welders DESCRIPTION Vishay s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (T C = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 Gate to emitter voltage V GES ± V T C = 5 C 6 Collector current I C T C = 8 C Pulsed collector current I () CM t p = ms A Diode continuous forward current I F T C = 8 C Diode maximum forward current I () FM t p = ms Maximum power dissipation P D T J = 75 C 47 W Short circuit withstand time t SC T C = 5 C 5 μs RMS isolation voltage V ISOL f = 5 Hz, t = min 4 V Note () Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (T C = 5 C unless otherwise noted) Collector to emitter breakdown voltage V (BR)CES T J = 5 C V GE = 5 V, I C = A, T J = 5 C Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, T J = 75 C -. - V Gate to emitter threshold voltage V GE(th) V CE = V GE, I C =. ma, T J = 5 C Collector cut-off current I CES V CE = V CES, V GE = V, T J = 5 C ma Gate to emitter leakage current I GES V GE = V GES, V CE = V, T J = 5 C na Revision: -Jun-5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-GTTP6N SWITCHING CHARACTERISTICS Turn-on delay time t d(on) Rise time t r Turn-off delay time t d(off) V CC = 3 V, I C = A, R g =., - - ns Fall time t f V GE = ± 5 V, T J = 5 C Turn-on switching loss E on Turn-off switching loss E off mj Turn-on delay time t d(on) - - Rise time t r Turn-off delay time t d(off) V CC = 3 V, I C = A, R g =., ns Fall time t f V GE = ± 5 V, T J = 5 C Turn-on switching loss E on Turn-off switching loss E off mj Input capacitance C ies Output capacitance C oes V GE = V, V CE = 3 V, f =. MHz nf Reverse transfer capacitance C res SC data I SC t p 5 μs, V GE = 5 V, T J = 5 C, V CC = 36 V, V CEM V A Stray inductance L CE nh Module lead resistance, terminal to chip R CC +EE m charge DIODE ELECTRICAL SPECIFICATIONS (T C = 5 C unless otherwise noted) Forward voltage V F I F = A T J = 5 C T J = 5 C V Reverse recovery Q rr T J = 5 C T J = 5 C μc IF = A, VR = 6 V, T J = 5 C Peak reverse recovery current I rr R G = 5.6 V GE = -5 V T J = 5 C A T J = 5 C Reverse recovery energy E rec T J = 5 C mj THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction temperature T J C Storage temperature range T Stg -4-5 IGBT Junction to case R thjc Diode K/W Case to sink (Conductive grease applied) R thcs Power terminal screw: M5.5 to 5. Mounting torque Nm Mounting screw: M6 3. to 5. Weight g Revision: -Jun-5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-GTTP6N V GE = 5 V 5 C 75 C V CC = 3 V R G =. Ω V GE = ± 5 V T J = 5 C E ON E OFF V CE (V) Fig. - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. I C V CE = 5 V 6 5 V CC = 3 V I C = A V GE = ± 5 V T J = 5 C C 5 C 4 3 E on E off V GE (V) Fig. - IGBT Transfer Characteristics R g (Ω) Fig. 4 - IGBT Switching Loss vs. R G 5 Module 5 5 R G =. Ω V GE = ± 5 V T J = 5 C V CE (V) Fig. 5 - RBSOA Revision: -Jun-5 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-GTTP6N Z thjc (K/W). IGBT.... t (s) Fig. 6 - IGBT Transient Thermal Impedance.5 I F (A) V CC = 3 V R G =. Ω V GE = - 5 V T J = 5 C E REC C 5 C V F (V) Fig. 7 - Diode Forward Characteristics 5 5 I F (A) Fig. 8 - Diode Switching Loss vs. I F V CC = 3 V I F = A V GE = - 5 V T J = 5 C E REC R G (Ω) Fig. 9 - Diode Switching Loss vs. R G Revision: -Jun-5 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-GTTP6N Diode Z thjc (K/W)..... t (s) Fig. - Forward Characteristics of Diode CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: -Jun-5 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Outline Dimensions INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 6-Aug- Document Number: 9554 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9

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