INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A

Transcription

1 INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 2 A VS-GA2HSS1PbF INT-A-PAK PRIMARY CHARACTERISTICS V CES V I C DC 8 A V CE(on) at 2 A, 25 C 1.13 V Speed DC to 1 khz Package INT-A-PAK Circuit configuration Half bridge FEATURES Gen IGBT technology Standard: optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E7899 Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Increased operating efficiency Direct mounting to heatsink Performance optimized as output inverter stage for TIG welding machines ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V T C = 25 C 8 Continuous collector current I C T C = 11 C 2 A Pulsed collector current I CM 8 Peak switching current I LM 8 Gate to emitter voltage V GE ± 2 RMS isolation voltage V ISOL Any terminal to case, t = 1 min 25 V T C = 25 C 83 Maximum power dissipation P D T C = 85 C 3 W Operating junction temperature range T J - to +15 Storage temperature range T Stg - to +125 C ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 1 ma - -, I C = 2 A Collector to emitter voltage V CE(on) V, I C = 2 A, T J = 125 C Gate threshold voltage V GE(th) I C =.25 ma 3.5 V GE = V, V CE = V Collector to emitter leakage current I CES ma V GE = V, V CE = V, T J = 125 C Gate to emitter leakage current I GES V GE = ± 2 V - - ± 25 na Revision: -Oct-17 1 Document Number: 932

2 VS-GA2HSS1PbF SWITCHING CHARACTERISTICS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q g IC = 2 A Gate to emitter charge Q ge V CC = V nc Gate to collector charge Q gc Turn-on switching loss E on IC = 2 A, V CC = 8 V, Turn-off switching loss E off R g = mj Total switching loss E ts Freewheeling diode: 3EPH, T J = 25 C Turn-on switching loss E on IC = 2 A, V CC = 8 V, Turn-off switching loss E off R g = mj Total switching loss E ts Freewheeling diode: 3EPH, T J = 125 C Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V pf Reverse transfer capacitance C res f = 1. MHz THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction temperature range T J Storage temperature range T Stg C Junction to case per leg R thjc Case to sink R thcs C/W Mounting torque case to heatsink - - case to terminal 1, 2, Nm Weight g I C - Collector to Emitter Current (A) µs pulse width T J = 125 C T J = 25 C I C - Collector to Emitter Current (A) T J = 125 C T J = 25 C V CE - Collector to Emitter Voltage (V) V GE - Gate to Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Revision: -Oct-17 2 Document Number: 932

3 VS-GA2HSS1PbF 1 1 T C - Case Temperature ( C) V GE - Gate to Emitter Voltage (V) Typical value Maximum DC Collector Current (A) Q G - Total Gate Charge (nc) Fig. 3 - Case Temperature vs. Maximum Collector Current Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage V CE - Collector to Emitter Voltage (V) A 2 A 12 A Switching Losses (mj) T J = 25 C V CE = 8 V I C = 2 A Freewheeling diode 3EPH E off typical E on typical T J - Junction Temperature ( C) R G - Gate Resistance (Ω) Fig. - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. - Typical Switching Losses vs. Gate Resistance 8 Switching Losses (mj) T J = 125 C V CE = 8 V V GE = 1 Ω Freewheeling diode 3EPH E off typical E on typical I C - Collector to Emitter Current (A) Fig. 7 - Typical Switching Losses vs. Collector to Emitter Current Revision: -Oct-17 3 Document Number: 932

4 VS-GA2HSS1PbF ORDERING INFORMATION TABLE Device code VS- GA 2 H S S 1 PbF product 2 - Essential part number IGBT modules 3 - Current rating (2 = 2 A) - Circuit configuration (H = half bridge without f/w diode) 5 - INT-A-PAK - Voltage code ( = V) 7 - Speed/type (S = standard speed IGBT) Assy location Italy None = standard production; PbF = lead (Pb)-free CIRCUIT CONFIGURATION 3 3, , Functional Diagram Electrical Diagram Dimensions LINKS TO RELATED DOCUMENTS Revision: -Oct-17 Document Number: 932

5 Outline Dimensions INT-A-PAK IGBT/Thyristor DIMENSIONS in millimeters (inches) 3 (1.18) 9 (.33) 28 (1.1) 29 (1.15) 7 (.28) Ø.5 (.25 DIA) 8 (3.15) 17 (.7) 23 (.91) 23 (.91) 5 (.2) 35 (1.38) x.8 (.11 x.3) 1.5 (.57) screws M x 1 (2.) 37 (1.) 9 (3.7) Document Number: 957 For technical questions, contact: indmodules@vishay.com Revision: 15-Feb-8 1

6 DIMENSIONS in millimeters (inches) INT-A-PAK IGBT Outline Dimensions (.7) 23 (.91) 23 (.91) (.5) 5 (.2) 35 (1.38) 1.5 (.57) (1.18) 9 (.33) 28 (1.1) 29 (1.15) 7 (.28) Ø.5 (Ø.25) 2.8 x.8 (.11 x.3) 8 (3.15) 3 screws M x 1 (2.) 9 (3.7) 37 (1.) Revision: 27-Mar-13 1 Document Number: 95173

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