IGBT ECONO3 Module, 100 A

Transcription

1 IGBT ECONO3 Module, A VS-GBYGNT ECONO 3 4 pack PRIMARY CHARACTERISTICS V CES V V CE(on) typ. at A 3.52 V I C(DC) at T C = 64 C A Package ECONO 3 Circuit configuration 4 pack with thermistor FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive V CE(on) temperature coefficient Copper baseplate Operating frequencies 8 khz to 6 khz Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance please see BENEFITS Benchmark efficiency for SMPS appreciation in particular HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heat sink space saving PCB solderable terminals Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V T C = 25 C 27 Continuous collector current I C T C = 8 C 87 Pulsed collector current I CM 26 Clamped inductive load current I LM 26 A T C = 25 C 7 Diode continuous forward current I F T C = 8 C 49 Diode maximum forward current I FSM 37 Gate to emitter voltage V GE ± V T C = 25 C 625 Power dissipation, IGBT P D T C = 8 C 35 W MODULE Operating junction temperature range T J -55 to +5 Storage temperature range T Stg -4 to +25 C RMS isolation voltage V ISOL Any terminal to case, t = s 35 V Revision: 22-Sep-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-GBYGNT ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa - - V GE = 5 V, I C = 5 A Collector to emitter voltage V CE(on) V GE = 5 V, I C = A V GE = 5 V, I C = 5 A, T J = 25 C V V GE = 5 V, I C = A, T J = 25 C Gate threshold voltage V GE(th) V CE = V GE, I C = ma Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (25 C to 25 C) mv/ C V GE = V, V CE = V μa Zero gate voltage collector current I CES V GE = V, V CE = V, T J = 25 C ma I F = 5 A, V GE = V Forward voltage drop V FM I F = A, V GE = V I F = 5 A, V GE = V, T J = 25 C V I F = A, V GE = V, T J = 25 C Gate to emitter leakage current I GES V GE = ± V - - ± 44 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q G IC = 5 A, Gate-to-emitter charge (turn-on) Q GE V CC = 6 A, nc Gate-to-collector charge (turn-on) Q GC V GE = 5 V Turn-on switching loss E on I C = A, V CC = 6 V, Turn-off switching loss E off V GE = 5 V, R g = Total switching loss E tot L = 5 μh, Turn-on switching loss E on I C = A, V CC = 6 V, mj Turn-off switching loss E off V GE = 5 V, R g = Total switching loss E tot L = 5 μh, T J = 25 C Turn-on delay time t d(on) Rise time t I C = A, V CC = 6 V, r V GE = 5 V, R g = 4.7 Turn-off delay time t d(off) L = 5 μh, T J = 25 C ns Fall time t f Reverse bias safe operating area RBSOA T J = 5 C, I C = 26 A, V GE = 5 V to V, R g = 4.7, V CC = 6 V, V p = V Short circuit safe operating area SCSOA T J = 5 C, R g =, V GE = 5 V to V, V CC = 9 V, V p = V - - μs Diode reverse recovery time t rr T J = 25 C ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V T J = 25 C A Diode recovery charge Q rr T J = 25 C nc Revision: 22-Sep-7 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-GBYGNT INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. UNITS Resistance R 25 T C = 25 C 5 R T C = C 493 ± 5 % B-value B 25/5 R 2 = R 25 exp [B 25/5 (/T 2 - /(298.5K))] 3375 ± 5 % K Maximum operating temperature 2 C Dissipation constant 2 mw/ C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS IGBT - junction-to-case (per switch) R thjc DIODE - junction-to-case (per diode) R thjc C/W Case to sink, flat, greased surface (per module) R thjs Mounting torque (M5) Nm Weight g T J = 25 C Allowable Case Temperature ( C) DC V CE (V) I C - Continuous Collector Current (A) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V V CE (V) A A 5 A V CE (V) T J ( C) Fig. 2 - Typical IGBT Output Characteristics, T J = 25 C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 22-Sep-7 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-GBYGNT 8 V CE = V T J = 5 C I CES (ma).. T J = 25 C 6 4 T J = 25 C V GE (V) V CES (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current V GEth (V) T J = 25 C I F (A) 8 6 T J = 25 C I C (ma) V FM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 6 Chip level Module level Allowable Case Temperature ( C) DC V CE (V) I F - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 22-Sep-7 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-GBYGNT Eoff Energy (mj) Eon Switching Time (ns) t d(off) t d(on) t f t r R g (Ω) Fig. - Typical IGBT Energy Loss vs. I C T J = 25 C, V CC = 6 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 4 - Typical IGBT Switching Time vs. R g T J = 25 C, V CC = 6 V, I C = A, V GE = 5 V, L = 5 μh Switching Time (ns) t d(off) t d(on) t f t r t rr (ns) T J = 25 C di F /dt (A/μs) Fig. 2 - Typical IGBT Switching Time vs. I C T J = 25 C, V CC = 6 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = 5 A Energy (mj) Eon Eoff I rr (A) T J = 25 C R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Energy Loss vs. R g T J = 25 C, V CC = 6 V, I C = A, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = 5 A Revision: 22-Sep-7 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-GBYGNT Q rr (nc) T 26 J = 25 C di F /dt (A/μs) Fig. 7 - Typical Diode Reverse Recovery Charge vs. di F /dt, V rr = 4 V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W) DC.... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics - (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W) DC.... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics - (Diode) Revision: 22-Sep-7 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-GBYGNT ORDERING INFORMATION TABLE Device code VS- G B Y G N T product - Insulated gate bipolar transistor (IGBT) - B = IGBT Gen 5 NPT - Current rating ( = A) - Circuit configuration (Y = 4 pack) - Package indicator (G = ECONO 3) - Voltage rating ( = V) - Speed / type (N = ultrafast with reduced diode, speed 8 khz to 6 khz) - NTC thermistor CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING pack with thermistor Y QB QB QB3 QB Ntc 6 2 Dimensions LINKS TO RELATED DOCUMENTS Revision: 22-Sep-7 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 Outline Dimensions ECONO3 4 Pack DIMENSIONS in millimeters and inches Revision: 2-Apr-6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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