EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A

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1 EMIPAK-B PressFit Power Module -Levels Half-Bridge Inverter Stage, 5 A VS-ETF5Y65U EMIPAK-B (package example) PRODUCT SUMMARY Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = A.7 V Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = 5 A.75 V I C at T C = 8 C 5 A Speed 8 khz to khz Package EMIPAK-B Circuit -levels half bridge inverter stage FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al O substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductances Low switching loss PressFit pins locking technology. Patent # US.6.8 B UL approved file E78996 Material categorization: for definitions of compliance please see DESCRIPTION VS-ETF5Y65U is an integrated solution for a multi level inverter stage in a single package. The EMIPAK-B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T J 75 Storage temperature range T Stg - to +5 C RMS isolation voltage V ISOL T J = 5 C, all terminals shorted, f = 5 Hz, t = s 5 V Q - Q IGBT Collector to emitter voltage V CES 65 Gate to emitter voltage V GES V Pulsed collector current I CM Clamped inductive load current I () LM A Continuous collector current I C T C = 6 C T C = 5 C T SINK = 6 C 6 T C = 5 C 7 Power dissipation P D T C = 6 C 9 PATENT(S): This Vishay product is protected by one or more United States and International patents. A W Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-ETF5Y65U ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Q - Q IGBT Collector to emitter voltage V CES 65 Gate to emitter voltage V GES V Pulsed collector current I CM Clamped inductive load current I () LM A Continuous collector current I C T C = 6 C 7 A T C = 5 C T SINK = 6 C 77 T C = 5 C 6 Power dissipation P D T C = 6 C 6 W D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage V RRM 65 V Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, T J = 5 C 8 Diode continuous forward current I F T C = 6 C 8 T C = 5 C 95 T SINK = 6 C 5 T C = 5 C Power dissipation P D T C = 6 C 69 D - D - D - D AP DIODE Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, T J = 5 C 5 Diode continuous forward current I F T C = 6 C 66 T C = 5 C 78 T SINK = 6 C T C = 5 C 76 Power dissipation P D T C = 6 C 5 Notes Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. () V CC = 5 V, V GE = 5 V, L = 5 μh, R g =.7, T J = 75 C A W A W ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q IGBT Collector to emitter breakdown voltage BV CES V GE = V, I C = μa V GE = 5 V, I C = A Collector to emitter voltage V CE(ON) V GE = 5 V, I C = A, T J = 5 C V Gate threshold voltage V GE(th) V CE = V GE, I C =. ma Temperature coefficient of threshold voltage V GE(th) /T J V CE = V GE, I C = ma (5 C to 5 C) mv/ C Forward transconductance g fe V CE = V, I C = A S Transfer characteristics V GE V CE = V, I C = A V V GE = V, V CE = 65 V -. Zero gate voltage collector current I CES V GE = V, V CE = 65 V, T J = 5 C μa Gate to emitter leakage current I GES V GE = ± V, V CE = V - - ± 6 na Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-ETF5Y65U ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q IGBT Collector to emitter breakdown voltage BV CES V GE = V, I C = μa V GE = 5 V, I C = 5 A Collector to emitter voltage V CE(ON) V GE = 5 V, I C = 5 A, T J = 5 C V Gate threshold voltage V GE(th) V CE = V GE, I C = 5. ma Temperature coefficient of threshold voltage V GE(th) /T J V CE = V GE, I C =. ma (5 C to 5 C) mv/ C Forward transconductance g fe V CE = V, I C = 5 A - - S Transfer characteristics V GE V CE = V, I C = 5 A V V GE = V, V CE = 65 V -. Zero gate voltage collector current I CES V GE = V, V CE = 65 V, T J = 5 C - - μa Gate to emitter leakage current I GES V GE = ± V, V CE = V - - ± 6 na D5 - D6 CLAMPING DIODE Cathode to anode blocking voltage V BR I R = μa I F = A -..5 Forward voltage drop V FM I F = A, T J = 5 C V R = 65 V Reverse leakage current I RM V R = 65 V, T J = 5 C - - D - D - D - D AP DIODE I F = A -..8 Forward voltage drop V FM I F = A, T J = 5 C V μa V SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q IGBT (WITH D5 - D6 CLAMPING DIODE) Total gate charge (turn-on) Q g IC = A Gate to emitter charge (turn-on) Q ge V CC = V nc Gate to collector charge (turn-on) Q gc V GE = 5 V Turn-on switching loss E ON -. - Turn-off switching loss E OFF -. - mj I C = A Total switching loss E TOT V CC = 5 V Turn-on delay time t d(on) V GE = 5 V - - Rise time t R g =.7 r L = 5 μh () Turn-off delay time t d(off) ns Fall time t f Turn-on switching loss E ON Turn-off switching loss E OFF IC = A mj Total switching loss E TOT V CC = 5 V -. - Turn-on delay time t d(on) V = 5 V GE R g = Rise time t r L = 5 μh Turn-off delay time t d(off) T J = 5 C () ns Fall time t f Input capacitance C ies VGE = V - 66 Output capacitance C oes V CC = V - pf Reverse transfer capacitance C res f = MHz - 8 Reverse bias safe operating area Short circuit safe operating area RBSOA SCSOA T J = 75 C, I C = A V CC = 5 V, V P = 65 V R g =.7, V GE = 5 V to V R g = 5., V CC = V, V P = 6 V V GE = 5 V to, T J = 5 C Fullsquare μs Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-ETF5Y65U SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q IGBT (WITH D - D AP DIODE) Total gate charge (turn-on) Q g IC = 5 A - - Gate to emitter charge (turn-on) Q ge V CC = V nc Gate to collector charge (turn-on) Q gc V GE = 5 V - - Turn-on switching loss E ON Turn-off switching loss E OFF mj I C = 5 A Total switching loss E TOT V CC = 5 V -. - Turn-on delay time t d(on) V GE = 5 V Rise time t r R g = Turn-off delay time t d(off) L = 5 μh () ns Fall time t f Turn-on switching loss E ON Turn-off switching loss E OFF IC = 5 A mj Total switching loss E TOT V CC = 5 V Turn-on delay time t d(on) V = 5 V GE R g = Rise time t r L = 5 μh Turn-off delay time t d(off) T J = 5 C () ns Fall time t f Input capacitance C ies VGE = V Output capacitance C oes V CC = V pf Reverse transfer capacitance C res f = MHz Reverse bias safe operating area RBSOA T J = 75 C, I C = A V CC = 5 V, V P = 65 V Fullsquare R g =.7, V GE = 5 V to V Short circuit safe operating area SCSOA R g = 5., V CC = V, V P = 6 V V GE = 5 V to, T J = 5 C μs D5 - D6 CLAMPING DIODE Diode reverse recovery time t rr VR = V ns Diode peak reverse current I rr I F = 5 A A Diode recovery charge Q rr dl/dt = 5 A/μs - - nc Diode reverse recovery time t rr VR = V - - ns Diode peak reverse current I rr I F = 5 A - - A Diode recovery charge Q rr dl/dt = 5 A/μs, T J = 5 C nc D - D - D - D AP DIODE Diode reverse recovery time t rr VR = V ns Diode peak reverse current I rr I F = 5 A - - A Diode recovery charge Q rr dl/dt = 5 A/μs nc Diode reverse recovery time t rr VR = V - - ns Diode peak reverse current I rr I F = 5 A -. - A Diode recovery charge Q rr dl/dt = 5 A/μs, T J = 5 C nc Note () Energy losses include tail and diode reverse recovery. Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-ETF5Y65U INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS Resistance R 5 T C = 5 C 5 R T C = C 9 ± 5 % B-value B 5/5 R = R 5 exp. [B 5/5 (/T - /(98.5 K))] 75 ± 5 % K Maximum operating temperature C Dissipation constant mw/ C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Q - Q IGBT - Junction to case thermal resistance (per switch) Q - Q IGBT - Junction to case thermal resistance (per switch) R thjc D5 - D6 Clamping diode - Junction to case thermal resistance (per diode) D - D - D - D AP diode - Junction to case thermal resistance (per diode) Q - Q IGBT - Case to sink thermal resistance (per switch) C/W Q - Q IGBT - Case to sink thermal resistance (per switch) D5 - D6 Clamping diode - Case to sink thermal resistance (per diode) R () thcs -. - D - D - D - D AP diode - Case to sink thermal resistance (per diode) Case to sink thermal resistance per module C/W Mounting torque (M) - Nm Weight g Note () Mounting surface flat, smooth, and greased Revision: 6-Jun-6 5 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-ETF5Y65U T J = 5 C T J = 5 C T J = 75 C V CE = V T J = 5 C T J = 5 C V CE (V) V GE (V) Fig. - I C vs. V CE, Typical Q - Q Trench IGBT Output Characteristics, V GE = 5 V Fig. - I C vs V GE Typical Q - Q Trench IGBT Transfer Characteristics V GE = V V GE = 5 V V GE = 8 V V GE = 9 V V GEth (V) T J = 5 C T J = 5 C 5 V CE (V) I C (ma) Fig. - I C vs. V CE Typical Q - Q Trench IGBT Output Characteristics, T J = 5 C Fig. 5 - V GEth vs. I C Typical Q - Q Trench IGBT Gate Threshold Voltage 8 Allowable Case Temperature ( C) I CES (ma)..... T J = 75 C T J = 5 C T J = 5 C I C - Continuous Collector Current (A) V CES (V) Fig. - Allowable Case Temperature vs. Continuous Collector Current, Maximum Q - Q IGBT Continuous Collector Current vs. Case Temperature Fig. 6 - I CES vs V CES Typical Q - Q Trench IGBT Zero Gate Voltage Collector Current Revision: 6-Jun-6 6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-ETF5Y65U.5 t d(on) Energy (mj).5.5 Eoff Eon Switching Time (ns) t d(off) t r t f R g (Ω) Switching Time (ns) Fig. 7 - Energy Loss vs. I C (Typical Q - Q Trench IGBT Energy Loss vs. I C (with D5 - D6 Clamping Diode)), T J = 5 C, V CC = 5 V, R g =.7, V GE = ± 5 V, L = 5 μh t d(off) t d(on) t f t r Fig. 8 - Switching Time vs. I C (Typical Q - Q Trench IGBT Switching Time vs. I C (with D5 - D6 Clamping Diode)), T J = 5 C, V CC = 5 V, R g =.7, V GE = ± 5 V, L = 5 μh 7 Fig. - Switching Time vs. R g (Typical Q - Q Trench IGBT Switching Time vs. R g (with D5 - D6 Clamping Diode)), T J = 5 C, V CC = 5 V, I C = A, V GE = ± 5 V, L = 5 μh Allowable Case Temperature ( C) Fig. - Allowable Case Temperature vs. Continuous Collector Current, (Maximum D5 - D6 Diode Continuous Forward Current vs. Case Temperature) I F - Continuous Forward Current (A) 6 5 T J = 5 C 5 E on Energy (mj) E off I F (A) 5 5 T J = 75 C T J = 5 C R g (Ω) Fig. 9 - Energy Loss vs. R g (Typical Q - Q Trench IGBT Energy Loss vs R g (with D5 - D6 Clamping Diode)), T J = 5 C, V CC = 5 V, I C = A, V GE = ± 5 V, L = 5 μh V FM (V) Fig. - I F vs. V FM (Typical D5 - D6 Clamping Diode Forward Characteristics) Revision: 6-Jun-6 7 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VS-ETF5Y65U I RM (ma)..... T J = 75 C T J = 5 C T J = 5 C I rr (A) 8 5 C C 6 5 V R (V) di F /dt (A/μs) Fig. - I RM vs. V R (Typical D5 - D6 Clamping Diode Reverse Leakage Current) Fig. 5 - I rr vs. di F /dt) (Typical D5 - D6 Clamping Diode Reverse Recovery Current vs. di F /dt), V rr = V, I F = 5 A t rr (ns) C C 5 Q rr (nc) 5 C C 5 di F /dt (A/μs) di F /dt (A/μs) Fig. - t rr vs. di F /dt (Typical D5 - D6 Clamping Diode Reverse Recovery Time vs. di F /dt), V rr = V, I F = 5 A Fig. 6 - Q rr vs. di F /dt) (Typical D5 - D6 Clamping Diode Reverse Recovery Charge vs. di F /dt)), V rr = V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W) t - Rectangular Pulse Duration (s) Fig. 7 - Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics - (Q - Q Trench IGBT)) Revision: 6-Jun-6 8 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 VS-ETF5Y65U Z thjc - Thermal Impedance Junction to Case ( C/W) t - Rectangular Pulse Duration (s) Fig. 8 - Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics - (D5 - D6 Clamping Diode)) T J = 5 C T J = 5 C T J = 75 C Allowable Case Temperature ( C) V CE (V) I C - Continuous Collector Current (A) Fig. 9 - I C vs. V CE (Typical Q - Q Trench IGBT Output Characteristics, V GE = 5 V) Fig. - Allowable Case Temperature vs. Continuous Collector Current, (Maximum Q - Q IGBT Continuous Collector Current vs. Case Temperature) V GE = V V GE = 5 V V GE = 8 V V GE = 9 V V CE = V T J = 5 C T J = 5 C V CE (V) V GE (V) Fig. - I C vs. V CE (Typical Q - Q Trench IGBT Output Characteristics, T J = 5 C) Fig. - I C vs. V GE (Typical Q - Q Trench IGBT Transfer Characteristics) Revision: 6-Jun-6 9 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 VS-ETF5Y65U V GEth (V) T J = 5 C T J = 5 C Switching Time (ns) t f t r t d(on) t d(off) I C (ma) I CES (ma) Fig. - V GEth vs. I C (Typical Q - Q Trench IGBT Gate Threshold Voltage).... T J = 75 C V CES (V) T J = 5 C T J = 5 C Fig. - I CES vs. V CES (Typical Q - Q Trench IGBT Zero Gate Voltage Collector Current).5 Fig. 6 - Switching Time vs. I C (Typical Q - Q Trench IGBT Switching Time vs. I C (with D - D Antiparallel Diode)), T J = 5 C, V CC = 5 V, R g =.7, V GE = ± 5 V, L = 5 μh Energy (mj) Fig. 7 - Energy Loss vs. R g (Typical Q - Q Trench IGBT Energy Loss vs. R g (with D - D Antiparallel Diode)), T J = 5 C, V CC = 5 V, I C = 5 A, V GE = ± 5 V, L = 5 μh E off E on R g (Ω) t d(on) Energy (mj) Eoff Eon Switching Time (ns) t r t f t d(off) Fig. 5 - Energy Loss vs. I C (Typical Q - Q Trench IGBT Energy Loss vs. I C (with D - D Antiparallel Diode)), T J = 5 C, V CC = 5 V, R g =.7, V GE = ± 5 V, L = 5 μh R g (Ω) Fig. 8 - Switching Time vs. R g (Typical Q - Q Trench IGBT Switching Time vs. R g (with D - D Antiparallel Diode)), T J = 5 C, V CC = 5 V, I C = 5 A, V GE = ± 5 V, L = 5 μh Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

11 VS-ETF5Y65U T J = 5 C 6 I F (A) 75 T J = 75 C T J = 5 C t rr (ns) 5 C C V FM (V) 5 di F /dt (A/μs) Fig. 9 - I F vs. V FM (Typical D - D - D - D Antiparallel Diode Forward Characteristics) Fig. - t rr vs. di F /dt (Typical D - D - D - D Antiparallel Diode Reverse Recovery Time vs. di F /dt), V rr = V, I F = 5 A Allowable Case Temperature ( C) I rr (A) 8 5 C C 5 I F - Continuous Forward Current (A) di F /dt (A/μs) Fig. - Allowable Case Temperature vs. Continuous Collector Current, (Maximum D- D - D - D Diode Continuous Forward Current vs. Case Temperature) Fig. - I rr vs. di F /dt (Typical D - D - D - D Antiparallel Diode Reverse Recovery Current vs. di F /dt), V rr = V, I F = 5 A C Q rr (nc) C 5 di F /dt (A/μs) Fig. - Q rr vs. di F /dt (Typical D - D - D - D Antiparallel Diode Reverse Recovery Charge vs. di F /dt), V rr = V, I F = 5 A Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

12 VS-ETF5Y65U Z thjc - Thermal Impedance Junction to Case ( C/W) t - Rectangular Pulse Duration (s) Fig. - Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics - (Q - Q Trench IGBT)) Z thjc - Thermal Impedance Junction to Case ( C/W) t - Rectangular Pulse Duration (s) Fig. 5 - Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics - (D - D - D - D Antiparallel Diode)) ORDERING INFORMATION TABLE Device code VS- ET F 5 Y 65 U product - Package indicator (ET = EMIPAK-B) - Circuit configuration (F = -levels half-bridge inverter stage) - Current rating (5 = 5 A) 5 - Switch die technology (Y = trench IGBT) 6 - Voltage rating (65 = 65 V) 7 - Diode die technology (U = ultrafast diode) Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

13 VS-ETF5Y65U CIRCUIT CONFIGURATION 5 6 Q D D5 7 8 Q Q D D 9 Q D6 D Ntc PACKAGE in millimeters Dimensions LINKS TO RELATED DOCUMENTS Revision: 6-Jun-6 Document Number: 9576 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

14 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

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