Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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1 V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base plateand soldering pins for PCB mounting Temperature sense included Applications AC motor control Motion/servo control Inverter and power supplies Module Characteristics ( max Max. Junction Temperature 15 C op Operating Temperature -4 5 C T stg Storage Temperature -4 5 C V isol Insulation Test Voltage AC, t=1min V CTI Comparative Tracking Index 25 M d Mounting Torque Recommended (M5) N m Weight 18 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 25 A T C =8 C 15 A I CM Repetitive Peak Collector Current t p =1ms A P tot Power Dissipation Per 15 W V RRM Repetitive Reverse Voltage =25 C V (AV) Average Forward Current T C =25 C 15 A RM Repetitive Peak Forward Current t p =1ms A I 2 t =5 C, t=1ms, V R =V A 2 s Littelfuse, Inc Revised:1/5/1
2 V 15A Module Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =.ma V (sat) Collector - Emitter I C =15V, =25 C V Saturation Voltage I C =15V, =5 C 1.9 V I ICES Collector Leakage Current =V, V GE =V, =25 C.1 ma =V, V GE =V, =5 C 1 ma I GES Gate Leakage Current =V, V GE =±15V, =5 C -4 4 na R Gint Integrated Gate Resistor Ω Q ge Gate Charge =V, I C =15A, V GE =±15V.15 μc C ies Input Capacitance 1.1 nf =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance.4 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =V I C =15A R G =75Ω V GE =±15V Inductive Load =25 C 9 ns =5 C 9 ns =25 C ns =5 C 5 ns =25 C 42 ns =5 C 52 ns =25 C 7 ns =5 C 9 ns =25 C 1.5 mj =5 C 2.1 mj =25 C 1.1 mj =5 C 1.3 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =5 C, V CC =9V A R thjc Junction-to-Case Thermal Resistance (Per ) 1.2 K/W V F Forward Voltage =V, =25 C V =V, =5 C 1.5 V t RR Reverse Recovery Time =15A, V R =V 15 ns I RRM Max. Reverse Recovery Current di F /dt=-4a/µs 1 A E rec Reverse Recovery Energy =5 C 1.1 mj R thjcd Junction-to-Case Thermal Resistance (Per ) 1.5 K/W Littelfuse, Inc Revised:1/5/1
3 V 15A Module -Rectifier Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit V RRM Repetitive Reverse Voltage =25 C 1 V (RMS) R.M.S. Forward Current Per T C =8 C 5 A SM I 2 t Non-Repetitive Surge Forward Current =45 C, t=1ms, 5Hz 32 A =45 C, t=8.3ms, Hz 3 A =45 C, t=1ms, 5Hz 5 A 2 s =45 C, t=8.3ms, Hz 537 A 2 s -Rectifier Electrical and Thermal Specifications ( V F I R Forward Voltage =V, =25 C 1. V =V, =5 C.9 V Reverse Leakage Current V R =1V, =25 C 5 μa V R =1V, =5 C 1 ma R thjcd Junction-to-Case Thermal Resistance (Per ) 1.5 K/W Brake-Chopper Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 25 A T C =8 C 15 A I CM Repetitive Peak Collector Current t p =1ms A P tot Power Dissipation Per 15 W V RRM Repetitive Reverse Voltage =25 C V (AV) Average Forward Current T C =25 C 15 A RM Repetitive Peak Forward Current t p =1ms A I 2 t =5 C, t=1ms, V R =V A 2 s Littelfuse, Inc Revised:1/5/1
4 V 15A Module Brake-Chopper Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =.ma V (sat) Collector - Emitter I C =15V, =25 C V Saturation Voltage I C =15V, =5 C 1.9 V I ICES Collector Leakage Current =V, V GE =V, =25 C 5 μa =V, V GE =V, =5 C 1 ma I GES Gate Leakage Current =V, V GE =±15V, =5 C -4 4 na R Gint Integrated Gate Resistor Ω Q ge Gate Charge =V, I C =15A, V GE =±15V.15 μc C ies Input Capacitance 1.1 nf =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance.4 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =V I C =15A R G =75Ω V GE =±15V Inductive Load =25 C 9 ns =5 C 9 ns =25 C ns =5 C 5 ns =25 C 42 ns =5 C 52 ns =25 C 7 ns =5 C 9 ns =25 C 1.5 mj =5 C 2.1 mj =25 C 1.1 mj =5 C 1.3 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =5 C, V CC =9V A R thjc Junction-to-Case Thermal Resistance (Per ) 1.2 K/W V F Forward Voltage =V, =25 C V =V, =5 C 1.5 V t RR Reverse Recovery Time =15A, V R =V 15 ns I RRM Max. Reverse Recovery Current di F /dt=-4a/µs 1 A E rec Reverse Recovery Energy =5 C 1.1 mj R thjcd Junction-to-Case Thermal Resistance (Per ) 1.5 K/W NTC Characteristics ( R 25 Resistance T c =25 C 5 KΩ B 25/ K Littelfuse, Inc Revised:1/5/1
5 V 15A Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics V GE =15V V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =5 C V V Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor 24 =2V 3 =V I C=15A V GE=±15V E on 18 Eon Eoff (mj) 2 1 E off V GE V R G Ω Figure 5: Switching Energy vs. Collector Current Figure : Reverse Biased Safe Operating Area 7 =V R G=75Ω V GE=±15V 24 Eon Eoff (mj) 4 2 E on E off 18 R G=75Ω V GE=±15V I C A V Littelfuse, Inc Revised:1/5/1
6 V 15A Module Figure 7: Forward Characteristics for Inverter Figure 8: Switching Energy vs. Gate Resistort for Inverter =15A =V IF (A) Erec (mj) V F V R G Ω Figure 9: Switching Energy vs. Forward Current -inverter Figure 1: Transient Thermal Impedance of and -inverter R G=75Ω =V 5 Erec (mj) ZthJC (K/W) (A) Rectangular Pulse Duration (seconds) Figure 11: Forward Characteristics - rectifier Figure : Typical Output Characteristics - brake chopper 8 7 V GE =15V IF (A) 5 4 T Vj =5 C T Vj =25 C V F V V Littelfuse, Inc Revised:1/5/1
7 V 15A Module Figure 13: Forward Characteristics - brake chopper Figure 14: NTC Characteristics IF (A) 15 R V F V T C C Circuit Diagram Dimensions-Package H The foot pins are in gold / nickel coating Littelfuse, Inc Revised:1/5/1
8 V 15A Module Packing Options Part Number Marking Weight Packing Mode M.O.Q 18g Bulk Pack 4 Part Numbering System Part Marking System MG 15 H - XB N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: VOLTAGE RATING : V CURRENT RATING 15: 15A ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE PACKAGE TYPE LOT NUMBER Space reserved for QR code Littelfuse, Inc Revised:1/5/1
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Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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APTGT3A17D3G Phase leg Trench + Field Stop IGBT3 Power Module CES = 17 I C = 3A @ Tc = 8 C 4 Q1 3 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
n-channel D 2 Pak 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 2 sixpack topology, 12, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Sixpack topology 12, 75 A IGBTs and
Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A
VS-GT3FD6N Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 3 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray
< IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) Collector current I C...... 75A Collector-emitter voltage CES... 2 Maximum junction temperature T jmax... 75 C Flat base Type APPLICATION AC Motor Control, Motion/Servo
Primary MTP IGBT Power Module
Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83
< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 5A Collector-emitter voltage
AOT15B65M1/AOB15B65M1
AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
V A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultrafast Recovery
Applications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS
IGBT Module MITH300PF1200LP CES I C25 CE(sat) = 1200 = 420 = 1.85 Phase leg Part number MITH300PF1200LP Features / dvantages: Trench IGBT - low CE(sat) - easy paralleling due to the positive temperature
IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode
Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >
CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives,
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.
AOTBM/AOBBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode
Rectifier with Chopper
STARPOWER SEMICONDUCTOR TM Rectifier with Chopper RD100PBH160C5S Preliminary Molding Type Module 1600V/100A General Description STARPOWER Rectifier Diode Power Module provides ultra low conduction loss.they
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
V23990-P589-A41-PM target datasheet. Maximum Ratings. Types. Tj=25 C, unless otherwise specified. Input Rectifier Diode. Inverter Transistor
2399-P589-41-PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AODBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)
APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar
provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
Data Sheet GHIS040A060S A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =600V I C = 40A @T C = 100 0 C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz Low leakage
Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel