NGB8207BN - 20 A, 365 V, N-Channel Ignition IGBT, D 2 PAK

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NGB8207BN - 20 A, 365, N-Channel Ignition IGBT, D 2 PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over oltage clamped

1 NGB8207BN - 20 A, 365, N-Channel Ignition IGBT, D 2 PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over oltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Rating Symbol alue Unit Collector Emitter oltage S 365 Gate Emitter oltage ±5 Collector Current T C = 25 C Pulsed 20 Amps, 365 olts = 0A, 4.5 Maximum Ratings and Thermal Characteristics ( = 25 C unless otherwise noted) A DC A AC Continuous Gate Current I G.0 ma Ideal for Coil on Plug and Driver on Coil Applications Gate Emitter ESD Protection Temperature Compensated Gate Collector oltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold oltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation oltage High Pulsed Current Capability Minimum Avalanche Energy 500 mj Gate Resistor (R G ) = 70 Ω These are Pb Free Devices Applications Ignition Systems Functional Diagram Transient Gate Current (t 2 ms, f 00 Hz) I G 20 ma ESD (Charged Device Model) ESD 2.0 k ESD (Human Body Model) R = 500 Ω, C = 00 pf ESD (Machine Model) R = 0 Ω, C = 200 pf ESD 8.0 k ESD 500 Total Power T C = 25 C Derate above 25 C 65 P D. W W/ C Additional Information Operating and Storage Temperature Range, T stg 55 to +75 C Datasheet Resources Samples Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

2 Unclamped Collector To Emitter Avalanche Characteristics ( C) Single Pulse Collector to Emitter Avalanche Energy Symbol alue Unit CC = 50, = 0, P k IL = 6.5 A, L = 3.7 mh, Rg = kω Starting = 25 C 500 E AS mj CC = 50, = 0, P k I L = 0 A, L = 6. mh, Rg = kω Starting = 25 C 306 Reverse Avalanche Energy CC = 00, = 20, P k I L = 25.8 A, L = 6.0 mh, Starting = 25 C E AS(R) 2000 mj Thermal Characteristics Symbol alue Unit Thermal Resistance, Junction to Case R θjc 0.9 C/W Thermal Resistance, Junction to Ambient (Note 2) R θja 50 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for 5 seconds T L 275 C 2. When surface mounted to an FR4 board using the minimum recommended pad size.

3 Electrical Characteristics - OFF Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Collector Emitter Clamp oltage BS = 2.0 ma = 0 ma = 40 C to 75 C = 40 C to 75 C = 0, = 24 = 25 C Zero Gate oltage Collector Current ES = 250 = 0 = 25 C.0 5 = 75 C µa = -40 C = 25 C Reverse Collector Emitter Clamp oltage B CES (R) = 75 ma = 75 C = 40 C = 25 C Reverse Collector Emitter Leakage Current ES(R) = 24 = 75 C ma = 40 C Gate Emitter Clamp oltage BS I G = ± 5.0 ma Gate Emitter Leakage Current I GES = ± 0.0 Gate Resistor R G _ = 40 C to 75 C = 40 C to 75 C = 40 C to 75 C µa 70 Ω Gate Emitter Resistor R GE = 40 C to 75 C kω Electrical Characteristics - ON (Note 3) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Gate Threshold oltage (th) =.0 ma, Threshold Temperature Coefficient (Negative) Collector to Emitter On oltage *Maximum alue of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. = = 25 C = 75 C = 40 C m/ C (on) = 6.0 ma, = 4.0 = 0 ma, = 4.5 = 25 C = 75 C = 40 C = 25 C

4 Electrical Characteristics - ON (Note 4) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit = 25 C..5.7 = 8.0 A, = 4.0 = 75 C = 40 C = 25 C = 0 A, = 3.7 = 75 C = 40 C = 25 C = 0 A, = 4.0 = 75 C Collector to Emitter On oltage (on) = 40 C = 25 C = 0 A, = 4.5 = 75 C..4.7 = 40 C = 25 C = 5 A, = 4.0 = 75 C = 40 C = 25 C = 20 A, = 4.0 = 75 C = 40 C Forward Transconductance gfs = 5.0, = 6.0 A = 25 C 5.8 Mhos

5 Dynamic Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Input Capacitance C ISS = 25 Output Capacitance C OSS T f = 0 khz J = 25 C pf Transfer Capacitance C RSS Switching Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max Unit Turn On Delay Time (Resistive) Low oltage t d (on) = 25 C = 4 Rise Time (Resistive) Low oltage t T f J = 25 C R L =.0 Ω = 5.0 Turn Off Delay Time (Resistive) Low oltage t T d (off) R G = 000 Ω J = 25 C Fall Time (Resistive) Low oltage Turn On Delay Time (Resistive) High oltage t f = 25 C t d (on) = 25 C µsec Rise Time (Resistive) = 300 High oltage t r R L = 46 Ω = 25 C = 5.0 Turn Off Delay Time (Resistive) High oltage t d (off) R G = 000 Ω = 25 C Fall Time (Resistive) High oltage t f = 25 C Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. *Maximum alue of Characteristic across Temperature Range.

6 Ratings and Characteristic Curves Figure. Typical Self Clamped Inductive Switching Performance 25 C Figure 2. Typical Self Clamped Inductive Switching Performance 50 C PEAK CURRENT (A) S 40 A 50 mj 40 S 25.6 A 660 mj 75 S 2 A 675 mj PEAK CURRENT (A) S 39.8 A 250 mj 40 S 6 A 400 mj S 9 A 375 mj CLAMPING TIME ( S) CLAMPING TIME ( S) Figure 3. Collector to Emitter oltage vs. Collector Current Figure 4. Collector to Emitter oltage vs. Junction Temp, COLLECTOR TO EMITTER OLTAGE () = 20 A = 5 A = 0 A = 6.0 A = 8.0 A , JUNCTION TEMPERATURE ( C) Figure 5. On Region = 25 C Figure 5. On Region = -40 C

7 Figure 7. On Region = 75 C Figure 8. Transfer Characteristics Figure 9. Collector to Emitter Leakage Current vs. Temp Figure 0. Gate Threshold oltage vs. Temperature LEAKAGE CURRENT ( A) 00,000 0,000 = = , JUNCTION TEMPERATURE ( C) (th), GATE THRESHOLD OLTAGE () MEAN + 4s MEAN MEAN 4s , JUNCTION TEMPERATURE ( C) Figure. Capacitance ariation Figure 2. Resistive Switching Time ariation vs. Temperature t, TIME ( s) 00 0 CC = 300 = 5.0 R G = 000 = 0 A t f t d(off) t r t d(on) TEMPERATURE ( C)

8 Figure 3. Inductive Switching Time ariation vs. Temperature Figure 4. Forward Biased Safe Operating Area t, TIME ( S) CC = 300 = 5.0 R G = 000 = 0 A L = 300 H t r t d(on) t f t d(off) TEMPERATURE ( C), COLLECTOR CURRENT (A) = 4.0 Single Pulse T C = 25 C (on) LIMIT THERMAL LIMIT PACKAGE LIMIT Mounted on 2 sq. FR4 board ( sq. 2 oz. Cu 0.06 thick single sided) 0 s 00 s ms 0 ms , COLLECTOR EMITTER OLTAGE () dc Figure 5. Best Case Transient Thermal Resistance (Non normalized Junction to Case Mounted on Cold Plate) t t

9 Dimensions Soldering Footrpint (0.005) M T B M SCALE 3: mm inches K Part Marking System 4 Collector Dim Inches Millimeters Min Max Min Max A B C D E F G 0.00 BSC 2.54 BSC H J K L M N 0.97 REF 5.00 REF P REF 2.00 REF R REF 0.99 REF S ORDERING INFORMATION Device Package Shipping NGB8207BNT4G Gate NGB LF 8207ABNG 8207BG AYWW 2 Collector D 2 PAK (Pb Free) 3 Emitter NGB8207ABN B = Device Code A= Assembly Location Y= Year WW = Work Week G= Pb Free Package 800 / Tape & Reel NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH B 0 THRU 48B 03 OBSOLETE, NEW STANDARD 48B 04. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:

NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK

NGD8201AN - 20 A, 400 V, N-Channel, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use