Features VSD013N10MS TO-252. Maximum ratings, at T j=25 C, unless otherwise specified. V Drain-Source breakdown voltage 100 V. Thermal Characteristics

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1 SD013N10MS 100/52A N-hannel Advanced Power MOSFET Feaures N-hannel Enhancemen mode ery low on-resisance GS=4.5 Fas Swiching DS 100 DS(on),TYP@ GS=10 11 mω DS(on),TYP@ GS= mω D 52 A TO % Avalanche es Pb-free lead plaing; ohs complian Par D Package Type Marking Tape and reel informaion SD013N10MS TO N10M 3000PS/eel Maximum raings, a T j=25, unless oherwise specified Symbol Parameer aing Uni Drain-Source breakdown volage 100 (B)DSS S Diode coninuous forward curren T =25 52 A D oninuous drain curren@gs=10 T =25 52 A T =100 A 33 A DM Pulse drain curren esed 1 T = A EAS Avalanche energy, single pulsed 2 D=18A 60 mj AS Avalanche energy, single pulsed 2 20 A P D Maximum power dissipaion T =25 A 78 W GS Gae-Source volage ±20 TSTG T J Sorage and operaing emperaure range -55 o 175 Thermal haracerisics Symbol Parameer Typical Uni J Thermal esisance-juncion o ase 1.9 /W JA Thermal esisance Juncion-Ambien 60 /W opyrigh anguard Semiconducor o., Ld

2 SD013N10MS 100/52A N-hannel Advanced Power MOSFET Symbol Parameer ondiion Min. Typ. Max. Uni Saic Elecrical T = 25 (unless oherwise saed) (B)DSS DSS Drain-Source Breakdown olage GS=0 D=250μA Zero Gae olage Drain urren(tc=25 ) DS=100,GS= μa Zero Gae olage Drain urren(tc=125 ) DS=100,GS= μa GSS GS(TH) DS(ON) DS(ON) Gae-Body Leakage urren GS=±20,DS= ±100 na Gae Threshold olage DS=GS,D=250μA Drain-Source On-Sae esisance3 GS=10, D=25A mω Drain-Source On-Sae esisance3 GS=4.5, D=5A mω Dynamic Elecrical T = 25 (unless oherwise saed) iss oss rss g gs gd npu apaciance pf DS=20,GS=0, Oupu apaciance f=1mhz pf everse Transfer apaciance pf Toal Gae harge n Gae-Source harge DS=50,D=4A, GS= n Gae-Drain harge n Swiching haracerisics d(on) r d(off) f Turn-on Delay Time ns DD=50, Turn-on ise Time D=4A, ns Turn-Off Delay Time G=6.8Ω, ns GS=10 Turn-Off Fall Time ns Source- Drain Diode haracerisics@ T = 25 (unless oherwise saed) SD rr rr NOTE: Forward on volage SD=25A,GS= everse ecovery Time Tj=25,sd=4A, ns GS=0 everse ecovery harge di/d=100a/μs 42 n 1 epeiive raing; pulse widh limied by max. juncion emperaure. 2 Limied by TJmax, saring TJ = 25, L = 0.3mH,G = 25Ω, AS = 20A, GS =10. Par no recommended for use above his value 3 Pulse widh 300μs; duy cycle 2%. opyrigh anguard Semiconducor o., Ld

3 Typical haracerisics SD013N10MS 100/52A N-hannel Advanced Power MOSFET DS, Drain -Source olage () Fig1. Typical Oupu haracerisics GS, Gae -Source olage () Fig2. Typical Transfer haracerisics SD, everse Drain urren (A) Normalized On esisance SD, Source-Drain olage () Fig3. Typical Source-Drain Diode Forward Tj - Juncion Temperaure ( ) Fig4. Normalized On-esisance s. Temperaure D - Drain urren (A) D, Drain-Source urren (A) D, Drain-Source urren (A) GS=10 D=25A Power(W) T1, Single Pulse Time (s) Fig5. Single Pulse Maximum Power Dissipaion DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area opyrigh anguard Semiconducor o., Ld

4 Typical haracerisics SD013N10MS 100/52A N-hannel Advanced Power MOSFET, apaciance (pf) GS, Gae-Source olage () DS, Drain-Source olage () Fig7. Typical apaciance s.drain-source olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage r(), Normalized Effecive Transien Thermal esisance T 1, Square Wave Pulse Duraion(sec) Fig9. T1,Transien Thermal esponse urve Fig10. Unclamped nducive Tes ircui and waveforms Fig11. Swiching Time Tes ircui and waveforms opyrigh anguard Semiconducor o., Ld

5 SD013N10MS 100/52A N-hannel Advanced Power MOSFET TO-252 Package Ouline DMENSONS ( uni : mm ) Symbol Min Typ Max Symbol Min Typ Max A A b b b c D D E E e e H D L L L w y usomer Service Sales and Service: sales@vgsemi.com anguard Semiconducor O., LTD TEL: (86-755) FAX: (86-755) WEB: opyrigh anguard Semiconducor o., Ld