Silicon N-Channel Power MOSFET CS100N06 A8

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Silicon N-Channel Power MOSFET CS100N06 A8 General Description: CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench V DSS 60 V I D (Silicon limited current)

This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 8.

Rating Units V DSS Drain-to-Source Voltage 60 V I D I DM a1 Continuous Drain Current T C = 25 C 90 A Continuous Drain Current T C = 100 C 59 A Pulsed Drain Current 360 A V GS Gate-to-Source Voltage

1 Silicon N-Channel Power MOSFET CS100N06 A8 General Description: CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench V DSS 60 V I D (Silicon limited current) 90 A R DS(ON)Typ 6.5 mω technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 8.5 mω) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Applications: Motor drive power tools Absolute(Tj= 25 unless otherwise specified) Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 60 V I D I DM a1 Continuous Drain Current T C = 25 C 90 A Continuous Drain Current T C = 100 C 59 A Pulsed Drain Current 360 A V GS Gate-to-Source Voltage ±20 V a2 E AS Avalanche Energy 342 mj P D Power Dissipation T C = 25 C 109 W Derating Factor above 25 C 0.87 W/ T J,T stg Operating Junction and Storage Temperature Range 150, 55 to 150 T L MaximumTemperature for Soldering 300 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of V01

2 Electrical Characteristics(Tj= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=0V, I D=250µA V V DS =60V, V GS= 0V, T I DSS Drain to Source Leakage Current j = V DS =48V, V GS= 0V, µa T j = I GSS(F) Gate to Source Forward Leakage V GS=20V na I GSS(R) Gate to Source Reverse Leakage V GS =-20V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=10V,I D=40A mω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 250µA V Pulse width tp 300µs,δ 2% Units Units Dynamic Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. R g Gate resistance V GS=0V, V DS=0V, f=1mhz Ω C iss Input Capacitance V GS = 0V V DS =25V f = 1.0MHz C oss Output Capacitance C rss Reverse Transfer Capacitance pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time V GS=10V,R G=6Ω V DD=30V,I D=50A tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =50A V DD =48V V GS = 10V Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of V01

3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. I S Continuous Source Current (Body Diode) A T C = 25 C I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=30A,V GS=0V V trr Reverse Recovery Time di/dt=100a/us Qrr Reverse Recovery Charge IF=20A nc Pulse width tp 300µs,δ 2% Units ns Symbol Parameter Max. Units RθJC Junction-to-Case 1.14 /W RθJA Junction-to-Ambient 62.5 /W a1 :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=0.5mH,Ias=37A Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of V01

Maximum Continuous Drain Current vs Case Temperature vs Drain Current Figure 4.

4 Characteristics Curve: Figure 1. Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs Case Temperature Figure 3. Maximum Continuous Drain Current vs Case Temperature vs Drain Current Figure 4. Typical output Characteristics Figure 5 Maximum Effective Thermal Impedance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of V01

5 Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature Figure10. Normalized Threshold Voltage vs Junction Temperature Figure 11. Normalized Breakdown Voltage vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of V01

6 Figure 12. Capacitance Characteristics Figure 13 Typical Gate Charge vs Gate to Source Voltage WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of V01

7 Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching Waveforms WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of V01

8 Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform Figure20.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of V01

9 Package Information: Items Values(mm) MIN MAX A B B C C D E F G H L* N Q *adjustable TO-220AB Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of V01

10 Limit The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% 0.1% 0.1% 0.1% 0.1% Lead Frame Molding Chip Wire Bonding Solder Note :Means the hazardous material is under the criterion of 2011/65/EU. :Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail: HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post: Tel: / Fax: / Application and Service:Post: Tel / Fax: / WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of V01

Silicon N-Channel Power MOSFET CS90N03 A4

Silicon N-Channel Power MOSFET CS90N03 A4 General Description: CS90N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss,