FTW20N50A. General Description

Transcription

1 FTW2N5A General Description FTW2N5A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. Features Fast Switching Low ON Resistance(Rdso Low Gate Charge (Typical Data:3nC) Low Reverse transfer capacitances(typical:65pf) % Single Pulse avalanche energy Test Applications Power switch circuit of electron ballast and adaptor. AbsoluteTc= 25 unless otherwise specified V DSS 5 V I D 2 A P D (T C =25) 23 W R DS(ON).26 TO 3P(N) Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 5 V Continuous Drain Current 2 A I D Continuous Drain Current T C = C 2 A I DM a Pulsed Drain Current 8 A V GS Gate-to-Source Voltage 3 V a2 E AS Single Pulse Avalanche Energy 95 mj a E AR Avalanche Energy,Repetitive 9 mj a I AR Avalanche Current 4 A dv/dt a3 Peak Diode Recovery dv/dt 4. V/ns Power Dissipation 23 W P D Derating Factor above 25 C.85 W/ T J T stg Operating Junction and Storage Temperature Range 5 55 to 5 T L MaximumTemperature for Soldering FTP4N 3 29 InPower Semiconductor Co., Ltd. Page of

2 Electrical CharacteristicsTc= 25 unless otherwise specified OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS =V, I D =25μA V BV DSS /T J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current V DS = 5V, V GS = V, T a = V DS =4V, V GS = V, T a = 25 I GSS(F) Gate to Source Forward Leakage V DS =V, V GS = 3V na I GSS(R) Gate to Source Reverse Leakage V DS =V, V GS = -3V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS =V,I D =A V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25μA V Pulse width tp38μs,2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. g fs Forward Transconductance V DS =5V, I D =A S C iss Input Capacitance C oss Output Capacitance f =.MHz Reverse Transfer Capacitance C rss V GS = V V DS = 25V Units μa Units Units pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time I D =2A V DD = 25V R G = Q g Total Gate Charge Q gs Gate to Source Charge -- 2 Q gd Gate to Drain ( Miller )Charge I D =2A V DD =4V V GS = V Units ns nc 29 InPower Semiconductor Co., Ltd. Page 2 of

3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S =2A,V GS =V V trr Reverse Recovery Time I S =2A,T j = 25C ns di Qrr Reverse Recovery Charge F /dt=a/us, V GS =V nc Pulse width tp38μs,2% Units Symbol Parameter Max. Units RJC Junction-to-Case.54 /W RJA Junction-to-Ambient 4 /W a Repetitive rating; pulse width limited by maximum junction temperature a2 L=.mH, I D =2A, Start T J =25 a3 I SD =2A,di/dt 3A/us,V DD BV DS, Start T J =25 29 InPower Semiconductor Co., Ltd. Page 3 of 9

4 24 OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J =MAX RATED T C =25 Single Pulse ms DC ms s s PD, Power Dissipation Watts Vds, Drain-to-Source Voltage, Volts Figure Maximun Forward Bias Safe Operating Area TC, Case Temperature, C Figure 2 Maximun Power Dissipation vs Case Temperature 7 PULSE DURATION=25s V GS =5V DUTY FACTOR=.5%MAX 6 Tc = 25 V GS =8V V GS =5.5 V GS =5V V GS = TC, Case Temperature C Figure 3 Maximum Continuous Drain Current vs Case Temperature Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Thermal Impedance, Normalized.. % Single pulse 5% 2% 5% % 2% Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case PDM t t2 NOTES DUTY FACTOR D=t/ t2 PEAK Tj=P DM *Z thjc *R thjc +T C 29 InPower Semiconductor Co., Ltd. Page 4 of

5 Idm, Peak Current, Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I I T C..E-5.E Vgs, Gate to Source Voltage, Volts.E-3.E-2 t Pulse Width, Seconds.E-.E+.E+ Figure 6 Maximun Peak Current Capability PULSE DURATION = 25s DUTY CYCLE =.5%MAX V DS =5V +5 Rds(on), Drain to Source ON Resistance, Ohms PULSE DURATION = s DUTY FACTOR =.5%MAX Tc =25 I D =2A I D =A I D =5A Vgs, Gate to Source Voltage Volts Rds(on), Drain to Source ON Figure 7 Typical Transfer Characteristics PULSE DURATION = s DUTY CYCLE=.5%MAX Tc =25 V GS =V V GS =2V Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 3 Rds(on), Drain to Source ON Resistance, Nomalized VGS=V ID=A Figure 9 Typical Drain to Source ON Resistance vs Drain Current Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature 29 InPower Semiconductor Co., Ltd. Page 5 of

6 Vgs(th),Threshold Voltage, Nomalized Capacitance, pf Isd, Reverse Drain Current, Amps VGS=V ID=25A Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature Coss V GS =V, f=mhz 2 Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Crss. Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage Vsd, Source - Drain Voltage, Volts Figure 5 Typical Body Diode Transfer Characteristics Ciss Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs, Gate to Source Voltage,Volts Tj, Junction temperature, C Figure 2 Typical Breakdown Voltage vs Junction Temperature VDS=V VDS=25V VDS=4V ID=2A VGS=V ID=25A Qg, Total Gate Charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage If R=: t AV =(L* I AS ) / (.38V DSS -V DD ) If R: t AV =(L/R) In[IAS*R/ (.38V DSS -V DD )+] R equals total Series resistance of Drain circuit STARTING Tj = 25 STARTING Tj = 5..E-6.E-5.E-4.E-3.E-2.E-.E+ tav,time in Avalanche,Seconds Figure 6 Unclamped Inductive Switching Capability 29 InPower Semiconductor Co., Ltd. Page 6 of

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9 Package Information TO-3P(N) Package The name and content of poisonous and harmful material in products Hazardous Substance Part s Name Pb Hg Cd Cr(VI) PBB PBDE Limit.%.%.%.%.%.% Lead Frame Molding Compound Chip Wire Bonding Solder Note means the hazardous material is under the criterion of SJ/T means the hazardous material exceeds the criterion of SJ/T InPower Semiconductor Co., Ltd. Page 9 of

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