CS1N60 A1H. Silicon N-Channel Power MOSFET. General Description: Features: Applications:

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1 Silicon N-Channel Power MOSFET CSN6 AH General Description: CSN6 AH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 6 V I D.8 A P D (T C =25 ) 3 W R DS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 5Ω) Low Gate Charge (Typical Data:4nC) Low Reverse transfer capacitances(typical:2.6pf) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 6 V I D I DM a Continuous Drain Current.8 A Continuous Drain Current T C = C.6 A Pulsed Drain Current 3.2 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 2 mj a E AR Avalanche Energy,Repetitive 6 mj a I AR Avalanche Current. A dv/dt a3 Peak Diode Recovery dv/dt 5 V/ns P D Power Dissipation 3 W Derating Factor above 25 C.24 W/ T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 25V

2 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current V DS = 6V, V GS= V, T a = V DS =48V, V GS= V, T a = I GSS(F) Gate to Source Forward Leakage V GS =+3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na Units µa ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. Units R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=.4A -- 5 Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. g fs Forward Trans conductance V DS=5V, I D =.8A S C iss Input Capacitance V GS = V V DS = 25V f =.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time I D =.8A V DD = 3V V GS = V R G = 25Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =.8A V DD =3V V GS = V -- 4 Q gs Gate to Source Charge --.7 Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 25V

3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. Units I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=.8A,V GS=V V trr Reverse Recovery Time I S=.8A,T j = 25 C -- 4 ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge nc Pulse width tp 3µs,δ 2% Symbol Parameter Typ. Units RθJC Junction-to-Case 4.7 /W RθJA Junction-to-Ambient 2 /W a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=.mH, I D =2A, Start T J =25 a3 :I SD =.8A,di/dt A/us,V DD BV DS, Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 25V

4 Characteristics Curve: Id,Drian current,amps. Vds,Drain-to-source Voltage,Volts μs ms ms OPERATION IN THIS AREA. MAY BE LIMITED BY R DS(ON) T J=5 DC T C=25 Single Pulse. Figure Maximum Forward Bias Safe Operating Area Pd, Power Dissipation,Watts Tc, Case Temperature, C Figure 2 Maximum Power Dissipation vs Case Temperature.6.4 V GS=V Id, Drain Current, Amps Id,Drain Source,Volts V GS=9V V GS=8V V GS=6V V GS=5V Thermal Impedance,Normanlized Tc,Case Temperature,C Figure 3 Maximum Continuous Drain Current vs Case Temperature.... 5% 2% % % Single pulse 5% 2% Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 25V Vds,Drain Source Voltage,Volts Figure 4 Typical Output Characteristics PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM*Z thjc*r thjc+t C

5 Id Drain to Source Current,Amps Idm, Peak Current, Amps E-5 V GS=V.E-4.E-3.E-2.E- t Pulse Width, Seconds Figure 6 Maximum Peak Current Capability VDS=25V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION Rds(on), Drain to Source ON Resistance, Ohms FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I 25.E+ I D=.8A I D=.4A I D=.2A 5 25 T C.E+ PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc = Vgs,Gate to Source Voltage,Volts Figure 7 Typical Transfer Characteristics Vgs, Gate to Source Voltage, Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 Rds(on),Drain to source ON Resistance. Ohms 3 2 V GS=V Rds(on),Drain to Source ON Resistance,Normalized V GS=V I D=25μA Id,Drain Current,Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current Tj,Junction Temperature,C Figure Typical Drian to Source on Resistance vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 25V

6 .2.5 Vgs(th),Threshold Voltage V DS=V GS ID=25μA Breakdown Voltage,Normalized I D=25μA Capacitance,Pf Tj,Junction Temperature,C Figure Typical Theshold Voltage vs Junction Temperature Crss Ciss V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Coss Vds,Drain to source Voltage,Volts Figure 3 Typical Capacitance vs Drain to Source Voltage Vgs,gate to Source Voltage, Volts Tj,Junction Temperature,C Figure 2 Typical Breakdown Voltage vs Junction Temperature Qg,Total gate charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage VDS=48V I D=.8A Isd,Reverse Drain Current,Amps Vsd,Source-Drain to source voltages,volts Figure 5 Typical Body Diode Transfer Characteristics Id, Drain Current, Amps. STARTING Tj = 25 STARTING Tj = 5 If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit..e-6.e-5.e-4.e-3.e-2.e- tav, Time in Avalanche, Seconds Figure 6 Unclamped Inductive Switching Capability WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 25V

7 Test Circuit and Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 25V

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9 Package Information: Items Values(mm) MIN MAX A B C D..5 E.3.6 F.3.5 L N.7.47 TO-92 Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 25V

10 Symbol Criterion (mm) Comment A 4.6±.3 A 4.6±.3 T 3.5±.3 d.5±.5 Typical L 2.5(min) P 2.7±. P 2.7±.3 cumulative error±./2 P P2 6.35±.4 F,F h, p ±. W W 6.±.3 W 9.±.5 W2.5MAX H 9.±. H 6.±.5 H 23.5± H2 3.5± α 3-55 ФD 4.±.2 t.8±.2 Backing paper Thickness.4±.2 H*.5-2. L.MAX WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 25V

11 The name and content of poisonous and harmful material in products Hazardous Substance Part s Name Pb Hg Cd Cr(VI) PBB PBDE Limit.%.%.%.%.%.% Lead Frame Molding Compound Chip Wire Bonding Solder Note :means the hazardous material is under the criterion of SJ/T :means the hazardous material exceeds the criterion of SJ/T The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.4 Liangxi RD. Wuxi, Jiangsu, China Mail:246 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:246 Tel: / Fax: / sales@hj.crmicro.com Application and Service:Post:246 Tel / Fax: /885 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 25V