Huajing Discrete Devices Silicon N-Channel Power MOSFET

Transcription

1 Silicon N-Channel Power MOSFET CSN General Description: CSN A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS V I D A P D (T C =5 ) 85 W R DS(ON)Typ.4 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-AB, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson.7Ω) Low Gate Charge (Typical Data: 9.5nC) Low Reverse transfer capacitances(typical: 7.5pF) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 5 unless otherwise specified): Symbol Parameter V DSS Drain-to-Source Voltage V I D I DM a Continuous Drain Current A Continuous Drain Current T C = C. A Pulsed Drain Current 4 A V GS Gate-to-Source Voltage ± V a E AS Single Pulse Avalanche Energy 7 mj a E AR Avalanche Energy,Repetitive mj a I AR Avalanche Current.5 A dv/dt a Peak Diode Recovery dv/dt 5. V/ns Power Dissipation 85 W P D Derating Factor above 5 C.8 W/ T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L MaximumTemperature for Soldering

2 CSN Electrical Characteristics(Tc= 5 unless otherwise specified): OFF Characteristics V DSS Drain to Source Breakdown Voltage V GS =V, I D =5µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=5uA,Reference V/ I DSS Drain to Source Leakage Current V DS =V, V GS = V, Unit T a = µa V DS =48V, V GS = V, T a = µa I GSS(F) Gate to Source Forward Leakage V GS = V na I GSS(R) Gate to Source Reverse Leakage V GS =-V na ON Characteristics R DS(ON) Drain-to-Source On-Resistance V GS =V,I D =A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 5µA. 4. V Pulse width tp 8µs,δ % Dynamic Characteristics g fs Forward Transconductance V DS =V, I D =A -- S C iss Input Capacitance -- 7 C oss Output Capacitance C rss Reverse Transfer Capacitance V GS = V V DS = 5V f =.MHz s pf Resistive Switching Characteristics t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time I D =A V DD = V R G =9.Ω Q g Total Gate Charge Q gs Gate to Source Charge -- 4 Q gd Gate to Drain ( Miller )Charge I D =A V DD =V V GS = V ns nc

3 CSN Source-Drain Diode Characteristics I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S =.A,V GS =V V trr Reverse Recovery Time I S =.A,T j = 5 C ns Qrr Reverse Recovery Charge Pulse width tp 8µs,δ % di F /dt=a/us, V GS =V nc Symbol Parameter Typ. RθJC Junction-to-Case.47 /W RθJA Junction-to-Ambient.5 /W a :Repetitive rating; pulse width limited by maximum junction temperature a :L=mH, I D =7.4A, Start T J =5 a :I SD =5A,di/dt A/us,V DD BV DS, Start T J =5 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of

4 CSN Characteristics Curve: OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J =MAX RATED T C =5 Single Pulse ms Vds, Drain-to-Source Voltage, Volts Figure Maximun Forward Bias Safe Operating Area DC ms ms Pd, Power Dissipation,Watts Figure Maximun Power Dissipation vs Case Temperature Tc, Case Temperature, C V GS =5V PULSE DURATION=μs DUTY FACTOR=.5%MAX Tc = 5 V GS =.5V V GS =4.5V V GS =7V V GS =V V GS =5.5V Thermal Impedance, Normalized TC, Case Temperature, C Figure Maximum Continuous Drain Current vs Case Temperature.. 5% % % 5% Single pulse % % Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics PDM t t NOTES: DUTY FACTOR :D=t/ t PEAK Tj=P DM *Z thjc *R thjc +T C

5 CSN Idm, Peak Current, Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 5 DERATE PEAK CURRENT AS FOLLOWS: I = I T C.E E-4 PULSE DURATION = μs DUTY CYCLE =.5%MAX V DS =V E-.E- t, Pulse Width, Seconds.E-.E+.E+ Figure Maximun Peak Current Capability PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =5 Rds(on), Drain to Source ON Resistance, Ohms 5 4 I D = 5A I D =.5A I D =.5A Rds(on), Drain to Source ON Resistance, Ohms Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics PULSE DURATION = μs DUTY CYCLE=.5%MAX Tc =5 V GS =V 5 5 Figure 9 Typical Drain to Source ON Resistance vs Drain Current Rds(on), Drain to Source ON Resistance, Nomalized Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current PULSE DURATION = μs DUTY CYCLE=.5%MAX VGS=V ID=..5A Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature

6 CSN Package Information: TO-AB Items Values(mm) MIN MAX A..5 B 5.. B C C.. D..4 E.7.9 F.5.55 G.7.7 H..8 L N.4.74 Q