WFF840. nnel. Thermal Characteristics. Features. General Description TO220F. Parameter. Units. Units. Parameter. Value. Symbol

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1 Silicon N-Chann nnel MOSFET Features 8A,500V,R DS(on) (Max GS =10V Ultra-low Gate Charge(Typical 48nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V ISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced planarstripe, VDMOS technology This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics This devices is specially well suited for high efficiency switch model power supplies, power factor correction bridge and full bridge resonant topology line a and half electronic lamp ballast G D S TO220F Absolute Maximum Ratings Symbol Parameter Value V DSS Drain Source Voltage 500 V I Continuous Drain Current(@Tc=25 ) 8* A D Continuous Drain Current(@Tc=100 ) 51* A I DM Drain Current Pulsed (Note1) 32* A V GS Gate to Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 320 mj E AR Repetitive Avalanche Energy (Note 1) 134 mj Units dv/dt Peak Diode Recovery dv/dt (Note 3) 35 V/ns Total Power Dissipation(@Tc=25 ) 44 W P D Derating Factor above W/ T J, T stg Junction and Storage Temperature -55~150 T L Maximum lead Temperature for soldering purposes 300 *Drain current limited by junction temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units R QJC Thermal Resistance, Junction-to-Case /W R QCS Thermal Resistance, Case to Sink /W R QJA Thermal Resistance, Junction-to-Ambient /W Rev C Nov2008 Copyright@Winsemi Microelectronics Co, Ltd, All right reserved T03-1

2 Electrical Characteristics (Tc = 25 C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current I GSS VGS = ±30 V, VDS = 0 V - - ±100 na Gate source breakdown voltage V (BR)GSS IG = ±10 μa, VDS = 0 V ± V Drain cut off current I DSS VDS = 400 V, VGS = 0 V μa Drain source breakdown voltage V (BR)DSS ID = 250 μa, VGS = 0 V V Break Voltage Temperature Coefficient ΔBV DSS / ΔT J I D =250μA, Referenced to V/ Gate threshold voltage V GS(th) VDS = 10 V, ID =250 μa 2-4 V Drain source ON resistance R DS(ON) VGS = 10 V, ID =40A Ω Forward Transconductance gfs VDS = 40 V, ID =40A S Input capacitance C iss VDS = 25 V, Reverse transfer capacitance C rss VGS = 0 V, Output capacitance C oss f = 1 MHz pf Rise time tr VDD =250 V, Switching time Turn on time ton ID =8 A Fall time tf RG=91 Ω Turn off time toff RD=31 Ω (Note4,5) ns Total gate charge (gate source plus gate drain) Qg VDD = 400 V, VGS = 10 V, Gate source charge Qgs ID =8 A (Note4,5) Gate drain ( miller ) Charge Qgd nc Source Drain Ratings and Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current I DR A Pulse drain reverse current I DRP A Forward voltage (diode) V DSF IDR = 8 A, VGS = 0 V V Reverse recovery time trr IDR = 8A, VGS = 0 V, ns Reverse recovery charge Qrr didr / dt = 100 A / μs μc Note 1Repeativity rating :pulse width limited by junction temperature 2L=9mH,I AS =8A,V DD =50V,R G =25Ω,Starting T J =25 3I SD 8A,di/dt 300A/us, V DD <BV DSS,STARTING TJ=25 4Pulse Test: Pulse Width 300us,Duty Cycle 2% 5Essentially independent of operating temperature This transistor is an electrostatic sensitive device Please handle with caution 2/7

3 Fig 1 On-State Characteristics Fig2 Transfer Characteristics Fig3 Capacitance Variation vs Drain Voltage Fig4 Maximum Avalanche Energy vs On-State Current Fig5 On-Resistance Variation vs Junction Temperature Fig6 Gate Charge Characteristics 3/7

4 Fig7 Maximum Safe Operation Area Fig8 Maximum Drain Current vs Case Temperature Fig9 Transient Thermal Response Curve 4/7

5 Fig10 Gate Test Circuit & Waveform Fig11 Resistive Switching Test Circuit & Waveform Fig12 Unclamped Inductive Switching Test Circuit & Waveform 5/7

6 Fig13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7

7 TO F Package Dimension Unit: mm 7/7