PNMTOF600V20 N-Channel MOSFET

Transcription

1 PNMTOF6V2 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) (A) 6.45@ =V 2 D (2) G () S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage V DS 6 V Gate-Source Voltage ±3 V Continuous Drain Curren(T J =5 ) T A =25 T A = Figure 3 Pulsed Drain M Figure 6 A Power Dissipation P D 2 A 25 W Derating Factor above w/ Peak Diode Recovery dv/dt dv/dt 5. V/ns Single Pulse Avalanche Engergy L=.9mH, =5.2Amps E AS mj Pulsed Avalanche Rating I AS Figure 8 Maximum Temperature for Soldering Leads at.63in(.6mm) from case for seconds Package Body for seconds T L T PKG 3 26 Operating Junction and Storage Temperature Range T J -55 to 5 Thermal Characteristics Parameter Symbol Conditions Maximum Units Junction to Ambient R θja cubic foot chamber, free air 62.5 Junction to Case R θjc Water cooled heat sink, P D adjusted for a peak junction.5 /W temperature of +5 Rev.6

2 PNMTOF6V2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS =25μA, =V 6 - V Zero Gate Voltage Drain Current SS V DS =6V, =V - - μa Gate-Body Leakage Current I GSS V DS =V, =±3V - - ± na Gate Threshold Voltage (th) V DS =, =25μA V Static Drain-Source On-Resistance R DS(ON) =V, =9.A Ω Drain-Source Diode Forward Voltage V SD =V,I S =2A -.5 V Forward Transonductance gfs V DS =5V, =A 5 S Total Gate Charge Qg 55 Gate-Source Charge Qgs =3V, =8A 4 Gate-Drain Charge Qgd 2 nc Turn-On Delay Time t d(on) - 4 ns Turn-Off Delay Time Turn-On Rise Time t d(off) t r =3V, =V, R G =25Ω, =8A ns ns Turn-On Fall Time t f - 8 ns Input Capacitance C ISS 283 pf Output Capacitance C OSS =V, V DS =25V, f=mhz 245 pf Reverse Transfer Capacitance C RSS 7 pf Continuous Source Current(Body Diode) I S 2 A Maximum Pulsed Current(Body Diode) I SM 8 A Reverse Recovery Time trr =V, I F =2A, 65 ns Reverse Recovery Charge Qrr di/dt=a/μs 5.8 nc Typical Characteristics ZθJC,Thermal Impedance(Normalized).... 5% 2% % 5% 2% % Sing Pulse P DM t t2 Notes: Duty Factor: D=t/t2 Peak T J =P DM *Z θjc *R θjc +T C. E-6 E-6 E-6 E-3 E-3 E-3 E+ E+ t P, Rectangular Pulse Duration (s) Fig.Maximum Effective Thermal Impedance, Junction-to-Case Rev.6 2

3 PNMTOF6V PD, Power Dissipation (W) 5 5 ID,Drain Current (A) 5 5 ID,Drain Current (A) T C, Case Temperature( ) T C, Case Temperature( ) Fig 2.. Maximum Power Dissipation vs. Case Temperature Fig 3. Maximum Continuous Drain Current Pulse Duration=25μs Duty Factor=.5% Max T C =25 =5V =7.V =6.5V =6.V =5.5V =5.V V DS, Drain-to-Source Voltage(V) Fig 4. Typical Output Characteristics RDS(ON) Drain-to-Source On-Resistance(Ω) vs. Case Temperature Pulse Duration=μs Duty Factor=.5% Max T C =25 =4A =2A =A =5.A , Gate-to-Source Voltage (V) Fig 5. Typical Darin-to-Source ON Resistance vs. Gate Voltage and Drain Current Trans conductance May Limit Current in This Region For Temperatures Above 25 Derate Peak Current as Follows: IDM, Peak Current (A) I=I25 [ 2 5-T C 25 ] =V E-6 E-6 E-3 E-3 E-3 E+ E+ t p, Pulse Width (s) Fig 6. Maximum Peak Current Capability Rev.6 3

4 PNMTOF6V2 ID, Drain-to-Source Current (A) Pulse Duration=38μs Duty Factor=.5% Max V DS =3V , Gate-to-Source Voltage (V) Fig 7. Typical Transfer Characteristics IAS, Avalanche Current (A) Starting T J =5 Starting T J =25 If R=:t AV =(L*I AS )/(.3BV DSS - ) If R :t AV =(L/R)In[(I AS *R)(.3 BV DSS - )+] R equals total Series resistance of Drain circuit. E-6 E-6 E-6 E-3 E-3 t AV, Time in Avalanche (s) Fig 8. Unclamped Inductive Switching Capability RDS(ON),Drain-to-Source On-Resistance(Ω) Pulse Duration=μs Duty Factor=.5% Max T C =25 =V ID, Drain Current (A) Fig 9. Typical Drain-to-Source ON Resistance vs. Drain Current RDS(ON),Drain-to-Source On-Resistance(Normalized) Pulse Duration=μs Duty Factor=.5% Max =V, =A T J, Junction Temperature ( ) Fig. Typical Drain-to-Source ON Resistance vs. Junction Temperature BVDSS, Drain-to-Source Breakdown Voltage (Normalized) =V =25μA T J, Junction Temperature ( ) T J, Junction Temperature ( ) Fig. Typical Breakdown Voltage vs. Fig 2. Typical Threshold Voltage vs. Junction Temperature Junction Temperature VGS(TH), Threshold Voltage (Normalized) =V DS =25μA Rev.6 4

5 PNMTOF6V2 μs ID, Drain Current (A) μs ms ms DC. Operation in this area may be limited by R DS(ON) T J =MAX Rated, T C =25. V DS, Drain-to-Source Voltage (V) Fig 3. Maximum Forward Bias Safe Operating Area C, Capacitance (pf). =V,f=MHz Ciss=Cgs+Cgd Crss=Cgd Coss=Cds+Cgd Coss Crss Ciss V DS, Drain Voltage (V) Fig 4. Typical Capacitance vs. Drain Voltage 2 6 VGS, Gate-to-Source Voltage (V) V DS =5V V DS =3V V DS =48V =8A QG-Total Gate Charge (nc) Fig 5. Typical Gate Charge vs. 6 ISD, Reverse Drain Current (A) =V V SD, Source-to-Drain Voltage (V) Fig 6. Typical Body Diode Transfer Characteristics Gate-to-Source Voltage Test Circuits and Waveforms Pulse width V DS V DS Qg D.U.T Qgs Qgd Miller Region ma (TH) Fig.7 Gate Charge Test Circuit Fig.8 Gate Charge Waveform Rev.6 5

6 PNMTOF6V2 V DS R L V DS 9% R G D.U.T % t d(on) t r t d(off) t f Fig.9 Resistive Switching Test Circuit Fig.2 Resistive Switching Waveforms di/dt adj Current Pump Double Pulse di/dt =A/μA D.U.T Qrr L trr Fig.2 Diode Reverse Recovery Test Circuit Fig.22 Diode Reverse Recovery Waveform L Series Switch (MOSFET) BV DSS BV DSS I AS D.U.T Commutating Diode 5Ω I AS t AV Fig.23 Unclamped Inductive Switching Test Circuit t p E AS = I AS 2 L 2 Fig.24 Unclamped Inductive Switching Waveforms Rev.6 6

7 PNMTOF6V2 Product dimension (TO-22F) B A Ф L J K M 顶杆孔深 T N C D E F P Q R () (2) (3) H G S Dim Millimeters Inches MIN MAX MIN MAX A B 2.7 REF.6 REF C D E F G H 2.54 TYP. TYP J K L.8 REF.3 REF M.5 REF.2 REF N P Q.3 REF.5 REF R S T Ф 3.5 REF.38 REF Rev.6 7

8 PNMTOF6V2 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.6 8