V DSS R DS(ON) (Max.) I D

Transcription

1 FTP18N6 N-Channel MOSFET Pb Lead Free Package and Finish Applications: DC Motor Control UPS Class D Amplifier V DSS R DS(ON) (Max.) I D 6V 18 mω 59A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP18N6 TO-22 FTP18N6 G D S TO-22 Not to Scale G D S Absolute Maximum Ratings Tc=25 o C unless otherwise specified Symbol Parameter Maximum Units V DSS Drain-to-Source Voltage (NOTE *1) 6 V I D Continuous Drain Current. 59 I o C Continuous Drain Current Figure 3 A I DM Pulsed Drain V (NOTE *2) Figure 6 Power Dissipation 15 W P D Derating Factor above 25 o C 1. W/ o C Gate-to-Source Voltage ±2 V E AS Single Pulse Avalanche Engergy L=5 µh, I D =21.5A 115 mj I AS Pulsed Avalanche Engergy Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3. V/ns T L T PKG T J and T STG Maximum Temperature for Soldering Leads at.63in (1.6) from Case for seconds Package Body for seconds Operating Junction and Storage Temperature Range Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Thermal Resistance to 175 R θjc Junction-to-Case Water cooled heatsink, P D adjusted for o C/W a peak junction temperature of +175 o C R θja Junction-to-Ambient cubic foot chamber, free air o C

2 OFF Characteristics T J =25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage V =V, I D =25µA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure V/ o C Reference to 25 o C, I D =25µA V DS =6V, =V I DSS Drain-to-Source Leakage Current µa V DS =48V, =V T J =15 o C Gate-to-Source Forward Leakage =+2V I GSS na Gate-to-Source Reverse Leakage =-2V ON Characteristics T J =25 o C unless otherwise specified Static Drain-to-Source On-Resistance, R DS(ON) -- =V, I D =36A Figure 9 and mω (NOTE *4) (TH) Gate Threshold Voltage, Figure V V DS =, I D =25µA gfs Forward Transconductance S V DS =15V, I D =59A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance =V C oss Output Capacitance V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance Figure 14 Q g Total Gate Charge V DS =3V Q gs Gate-to-Source Charge nc I D =59A Q gd Gate-to-Drain ( Miller ) Charge =V Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-On Delay Time V DD =3 V t rise Rise Time I D =59A ns t d(off) Turn-Off Delay Time =V t fall Fall Time R G =9.1Ω Page 2 of 11

3 Source-Drain Diode Characteristics T J =25 o C unless otherwise specified I S Continuous Source Current (Body Diode) A Integral pn-diode I SM Pulsed Source Current (Body Diode) A in MOSFET V SD Diode Forward Voltage V I S =59A, =V t rr Reverse Recovery Time ns =V Q rr Reverse Recovery Charge nc I F =59A, di/dt= A/µs Notes: *1. T J = +25 o C to +175 o C *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 59A, di/dt < A/µs, V DD < BV DSS, T J =+175 o C *4. Pulse width < 38µs; duty cycle < 2% Page 3 of 11

4 Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1. 5% ZθJC, Thermal Impedance (Normalized)..1. 2% % 5% 2% 1% single pulse P DM t 1 t 2 NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z θjc x 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figur e 3. vs Case Temperature Maximum Continuous Drain Current vs Case Temperature P D, Power Dissipation (W) T C, Case Temperature ( o C) T C, Case Temperature ( o C) I D, Drain Current (A) I D, Drain Current (A) Figure 4. Typical Output Characteristics PULSE DURATION = 25 µs DUTY FACTOR =.5% MAX T C = 25 o C = 15V = V = 8V = 6V RDS(ON), Drain-to-Source ON Resistance (mω) Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current 3 8 VGS = 4.5V PULSE DURATION = 25 µs 6 25 VGS = 4V DUTY FACTOR =.5% MAX 4 T C = 25 o C VGS = 3.5V 2 2 VGS = 3V = 5V Fi gur e I D = 14A I D = 28A I D = 55A V DS, Drain-to-Source Voltage (V), Gate-to-Source Voltage (V) Page 4 of 11

5 Figure 6. Maximum Peak Current Capability I DM, Peak Current (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I TC = V 1E-6 E-6 E-6 1E-3 E-3 E-3 1E+ E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) PULSE DURATION = 25 µs DUTY FACTOR =.5% MAX V DS = V +175 o C +25 o C -55 o C IAS, Avalanche Current (A) STARTING T J = 15 o C If R : t AV = (L/R) ln[(i AS R)/(1.3BV DSS -V DD )+1] If R= : t AV = (L I AS )/(1.3BV DSS -V DD ) R equals total Series resistance of Drain circuit STARTING T J = 25 o C 1 1E-6 E-6 E-6 1E-3 E-3 E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance (mω) Figure 9. Typical Drain-to-Source ON Figure. Resistance vs Drain Current PULSE DURATION = µs DUTY FACTOR =.5% MAX T C =25 C =V RDS(ON), Drain-to-Source Resistance (Normalized) Typical Drain-to-Source ON Resistance vs Junction Temperature I D, Drain Current (A) T J, Junction Temperature ( o C) PULSE DURATION = 25 µs DUTY FACTOR =.5% MAX = V, I D = 15A Page 5 of 11

6 Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature Typical Threshold Voltage vs Junction Temperature BV DSS, Drain-to-Source Breakdown Voltage (Normalized) VGS(TH), Threshold Voltage (Normalized).95 = V V.6 GS = V DS I D = 25 µa I D = 25 µa T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) I D, Drain Current (A) 1 T J = MAX RATED, T C = 25 o C Single Pulse V DS, Drain-to-Source Voltage (V) µs µs 1.ms ms DC C, Capacitance (pf) = V, f = 1MHz Ciss = Cgs + Cgd C oss C ds + C gd Crss = Cgd V DS, Drain Voltage (V) C iss C oss C rss Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage Typical Body Diode Transfer Characteristics, Gate-to-Source Voltage (V) 12 V DS =15V 8 V DS =3V V DS =45V I D = 59A ISD, Reverse Drain Current (A) Q G, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) o C 25 o C -55 o C = V Page 6 of 11

7 Test Circuits and Waveforms I D V DS I D V DS D.U.T. V DD (TH) Miller Region 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS R D.U.T. V DD % t d(on) t rise t d(off t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms Page 7 of 11

8 Test Circuits and Waveforms di/dt Current Pump Double Pulse I D di/dt = A/ µ s D.U.T. V DD Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. 5Ω I AS Coutating Diode V DD V DD t AV t p I 2 AS L EAS = 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms Page 8 of 11

9 TO-22 Package For Assembly Lot Codes Ending With: xxxxxh H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B C D J E F G K H J K M M a b c d G A e e E D C F d a B b c e e1 Page 9 of 11

10 TO-22 Package For Assembly Lot Codes Ending With: xxxxxs H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B C J D E F G K H J K M M a b c d G A e e E D F C d a B b c e e1 Page of 11

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