VDSS RDS(on)(Typ) ID (Max) 950V A. Symbol Parameter Maximum Units Test Condition

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1 N-Channel MOSFET Pb ISW11N9A Lead Free Package and Finish Applications: ATX Power LCD Panel Power VDSS RDS(on)(Typ) ID (Max) 95V.85 11A Features: RoHS Compliant & Halogen Free Low ON Resistance Low Gate Charge ESD Capability Improved Ordering Information Part Number Package Type Brand ISW11N9A TO-3PN IPS G D S TO-3PN Not to Scale Absolute Maximum s Tc= 25 unless otherwise specified Symbol Parameter Maximum V DSS Drain-to-Source Voltage (NOTE *1) 95 V I D Continuous Drain Current 11 I Continuous Drain Current Figure3 I DM Pulsed Drain V (NOTE *2) Figure6 A Power Dissipation 17 W P D Derating Factor above W/ O C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Engergy; 3 mj VESD(GS) Gate Source ESD Voltage(HBM,c=pF,R=1.5K) 6 V dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5. V/ns T L T PKG Thermal Resistance Maximum Temperature for Soldering Leads at.63in(1.6mm) from Case for seconds Package Body for seconds T J and TSTG Operation Junction and Storage Temperature Range 15, -55 to 15 Caution: Stresses greater than those listed in Absolute Maximum s Table may cause permanent damage to the device. Symbol Parameter Maximum Test Condition R JC Junction-to-Case.73 R JA Junction-to-Ambient 4 /W 3 26 Drain lead soldered to water cooled heatsink, PD ad-justed for a peak junction temperature of +15oC. 1 cubic foot chamber, free air. 212 InPower Semiconductor Co., Ltd. Page 1 of 9 ISW11N9A Rev.A. Nov. 212

2 Electrical Characteristics TJ= 25 unless otherwise specified OFF Characteristics Symbol Parameter Test Condition V DSS Drain-to-Source Breakdow Voltage V =V, I D =25μA BV DSS /T J Bvdss Temperature Coefficient V/ I DS(off) Off-State Drain-to-Source Current ua Reference to 25, ID=25uA V DS = 95V, =V, T a = 25 V DS =76V, = V, T a = 125 I GSS(F) Gate-to-Source Forward Leakage =+2V ua I GSS(R) Gate-to-Source Reverse Leakage =-2V ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance g fs Forward Transconductance S Test Conditions =V,I D =4.5A (NOTE*4) VDS >2ID*RDS(on)max I D =11A (NOTE*4) (TH) Gate Threshold Voltage V V DS =, I D = 25μA Dynamic Characteristics Symbol Parameter C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge Q gs Gate-to-Source Charge Q gd Gate-to-Drain ( Miller )Charge pf nc Test Conditions =V V DS = 25V f = 1.MHz =45V I D =11A Vgs=V Resistive Switching Characteristics Symbol Parameter t d(on) Turn-on Delay Time trise Rise Time t d(off) Turn-Off Delay Time t fall Fall Time ns Test Conditions = 45V I D =11A = V R G = InPower Semiconductor Co., Ltd. Page 2 of 9 ISW11N9A Rev.A. Nov. 212

3 Source-Drain Diode Characteristics Symbol Parameter I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A Test Conditions Integral pn-diode in MOSFET V SD Diode Forward Voltage V IS=11A,VGS=V trr Reverse Recovery Time ns Qrr Reverse Recovery Charge uc IF=11A, T j = 25 C di/dt=a/us Notes: *1. TJ=+25 to +15. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=11A di/dta/us, VDDBVDSS, TJmax=+15. *4. Pulse width38us; duty cycle2%. 212 InPower Semiconductor Co., Ltd. Page 3 of 9 ISW11N9A Rev.A. Nov. 212

4 Z JC, Thermal Impedance (Normalized) P D, Power Dissipation (W) I D, Drain Current (A) Duty Factor 1. 5% 2% %. 2% 1%. single pulse.1 vs Case Temperature T C, Case Temperature ( o C) % 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 Figure 4. Typical Output Characteristics V DS, Drain-to-Source Voltage (V) t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figure 3. I D, Drain Current (A) PULSE DURATION = 25 μs DUTY FACTOR =.5% MAX T C = 25 o C Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case VGS = 15V VGS = 6.V = 5.75V =5.5V VGS = 5.25V VGS = 5V VGS = 4.5V RDS(ON), Drain-to-Source ON Resistance ( Figure P DM NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z JC x R JC +T C T C, Case Temperature ( o C) t 1 t 2 Maximum Continuous Drain Current vs Case Temperature Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D = 11A I D = 4.5A I D = 2.5A PULSE DURATION = 25 μs DUTY FACTOR =.5% MAX T C = 25 o C , Gate-to-Source Voltage (V) 212 InPower Semiconductor Co., Ltd. Page 4 of 9 ISW11N9A Rev.A. Nov. 212

5 I DM, Peak Current (A) I D, Drain-to-Source Current (A) R DS(ON), Drain-to-Source ON Resistance () VGS = V o C +25 o C -55 o C , Gate-to-Source Voltage (V) E-6 E-6 E-6 1E-3 E-3 E-3 1E+ E+ PULSE DURATION = 25 μs DUTY CYCLE =.5% MAX VDS = V PULSE DURATION = 2 μs DUTY CYCLE =.5% MAX TC=25 C TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION Figure 7. Typical Transfer Characteristics = V Figure 6. Maximum Peak Current Capability t p, Pulse Width (s) I AS, Avalanche Current (A) R DS(ON), Drain-to-Source Resistance (Normalized). 1. R equals total Series resistance of Drain circuit.1 1E-6 E-6 E-6 1E-3 E-3 E STARTING T J = 15 o C If R= : t AV = (L I AS )/(1.3BV DSS - ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS - )+1] t AV, Time in Avalanche (s) STARTING T J = 25 o C PULSE DURATION = 25 μs DUTY CYCLE =.5% MAX = V, I D = 6.A I D, Drain Current (A) T J, Junction Temperature ( o C). Figure 9. Typical Drain-to-Source ON Figure. Resistance vs Drain Current Figure 8. Unclamped Inductive Switching Capability Typical Drain-to-Source ON Resistance vs Junction Temperature 212 InPower Semiconductor Co., Ltd. Page 5 of 9 ISW11N9A Rev.A. Nov. 212

6 BV DSS, Drain-to-Source Breakdown Voltage (Normalized) I D, Drain Current (A), Gate-to-Source Voltage (V) Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature T J, Junction Temperature ( o C) V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) = V (TH), Threshold Voltage (Normalized) I D = 25 μa T J = MAX RATED, T C = 25 o C Single Pulse OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) μs μs 1.ms DC C, Capacitance (pf) I SD, Reverse Drain Current (A) = V DS I D = 25 μa Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area ms = V, f = 1MHz C iss = C gs + C gd C oss C ds + C gd C rss = C gd T J, Junction Temperature ( o C) I D = 11A Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage V DS = 225V V DS = 45V V DS = 675V o C 25 o C -55 o C Typical Threshold Voltage vs Junction Temperature Typical Capacitance vs Drain-to-Source Voltage C rss V DS, Drain Voltage (V) C iss C oss Typical Body Diode Transfer Characteristics V SD, Source-to-Drain Voltage (V) = V InPower Semiconductor Co., Ltd. Page 6 of 9 ISW11N9A Rev.A. Nov. 212

7 Test Circuits and Waveforms V DS I D I D V DS Miller Region D.U.T. (TH) 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS R G D.U.T. % t d(on) t rise t d(off) t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms 212 InPower Semiconductor Co., Ltd. Page 7 of 9 ISW11N9A Rev.A. Nov. 212

8 Test Circuits and Waveforms di/dt adj. Current Pump Double Pulse I D di/dt = A/μA D.U.T. Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. Commutating Diode t AV 5 I AS t p I 2 AS L EAS 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms 212 InPower Semiconductor Co., Ltd. Page 8 of 9 ISW11N9A Rev.A. Nov. 212

9 Disclaimers: InPower Semiconductor Co., Ltd (IPS) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to IPS s terms and conditions supplied at the time of order acknowledgement. InPower Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent IPS deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed. InPower Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using IPS s components. To minimize risk, customers must provide adequate design and operating safeguards. InPower Semiconductor Co., Ltd does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in IPS s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. InPower Semiconductor Co., Ltd is not responsible or liable for such altered documentation. Resale of IPS s products with statements different from or beyond the parameters stated by InPower Semiconductor Co., Ltd for that product or service voids all express or implied warrantees for the associated IPS s product or service and is unfair and deceptive business practice. InPower Semiconductor Co., Ltd is not responsible or liable for any such statements. The MOSFET device is electrostatic sensitive. Proper electrostatic discharge (ESD) protection shall be implemented to avoid damaging the device. Life Support Policy: InPower Semiconductor Co., Ltd s products are not authorized for use as critical components in life support devices or systems without the expressed written approval of InPower Semiconductor Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 212 InPower Semiconductor Co., Ltd. Page 9 of 9 ISW11N9A Rev.A. Nov. 212