Symbol Parameter FTP06N65 Units

Transcription

1 FTP11N8 N-Channel MOSFET Applications: Automotive DC Motor Control Class D Amplifier Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP11N8 TO-22 FTP11N8 Pb Lead Free Package and Finish V DSS R DS(ON) (Max.) I D 75V 11 mω 1A G D S TO-22 Not to Scale G D S Absolute Maximum Ratings T C =25 o C unless otherwise specified Symbol Parameter FTP6N65 Units V DSS Drain-to-Source Voltage (NOTE *1) 75 V I D Continuous Drain Current 1* I 1 o C Continuous Drain Current Figure 3 A I DM Pulsed Drain 1V (NOTE *2) Figure 6 Power Dissipation 23 W P D Derating Factor above 25 o C 1.54 W/ o C Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Engergy L=1 mh, I D =11 Amps 6 mj I AS Pulsed Avalanche Rating Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3. V/ns T L T PKG T J and T STG Maximum Temperature for Soldering Leads at.63in (1.6) from Case for 1 seconds Package Body for 1 seconds Operating Junction and Storage Temperature Range to 175 o C *Drain Current limited by Maximum Package Current Rating, 75 Amps Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Thermal Resistance R θjc Junction-to-Case Water cooled heatsink, PD adjusted for o C/W a peak junction temperature of +175 o C. R θja Junction-to-Ambient cubic foot chamber, free air.

2 OFF Characteristics TJ=25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage V =V, I D =25µA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure V/ o C Reference to 25 o C, I D =25µA V DS =75V, =V I DSS Drain-to-Source Leakage Current µa V 25 DS =6V, =V T J =15 o C Gate-to-Source Forward Leakage V I GS =+2V GSS na Gate-to-Source Reverse Leakage = -2V ON Characteristics TJ=25 o C unless otherwise specified R Static Drain-to-Source On-Resistance V DS(ON) mω GS =1V, I D =45A Figure 9 and 1. (NOTE *4) (TH) Gate Threshold Voltage, Figure V V DS =, I D =25µA gfs Forward Transconductance S V DS =15V, I D =75A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance =V C oss Output Capacitance V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance Figure 14 Q g Total Gate Charge VDD=3V Q gs Gate-to-Source Charge nc ID=75A =1V Q gd Gate-to-Drain ( Miller ) Charge Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-on Delay Time V DD =3V t rise Rise Time I D =75A ns t d(off) Turn-Off Delay Time =1V t fall Fall Time R G =4.7Ω Page 2 of 11

3 Source-Drain Diode Characteristics Tc=25 o C unless otherwise specified I S Continuous Source Current (Body Diode) A Integral pn-diode I SM Maximum Pulsed Current (Body Diode) A in MOSFET V SD Diode Forward Voltage V I S =75A, =V t rr Reverse Recovery Time ns =V Q rr Reverse Recovery Charge nc I F =75A, di/dt=1 A/µs Notes: *1. T J = +25 o C to +175 o C. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 75A di/dt < 1 A/µs, V DD < BV DSS, T J =+175 o C. *4. Pulse width < 38µs; duty cycle < 2%. Page 3 of 11

4 Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1. 5% Z θjc, Thermal Impedance (Normalized) % 1% 5% 2% 1% single pulse P DM t 1 t 2 NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z θjc x R θjc +T C 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figure 3. vs Case Temperature 25 8 Maximum Continuous Drain Current vs Case Temperature P D, Power Dissipation (W) T T C, Case Temperature ( o C, Case Temperature ( o C) C) I D, Drain Current (A) Figure 4. Typical Output Characteristics. Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D, Drain Current (A) = 9V = 15V = 1V PULSE DURATION = 1 µs DUTY FACTOR =.5% MAX T C = 25 o C = 8V = 7V = 6V VGS = 5.5V VGS = 5V RDS(ON), Drain-to-Source ON Resistance (Ω) PULSE DURATION =1 µs DUTY FACTOR =.5% MAX T C = 25 o C I D = 1A I D = 5A I D = 25A I D = 12.5A V DS, Drain-to-Source Voltage (V), Gate-to-Source Voltage (V) Page 4 of 11

5 Figure 6. Maximum Peak Current Capability 1 I DM, Peak Current (A) 1 1 VGS = 1V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I TC E-6 1E-6 1E-3 1E-3 1E-3 1E+ 1E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) PULSE DURATION = 1 µs DUTY CYCLE =.5% MAX TC=25 C +175 o C +25 o C -55 o C I AS, Avalanche Current (A) STARTING T J = 25 o C STARTING T J = 15 o C If R= : t AV = (L I AS )/(1.3BV DSS -V DD ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS -V DD )+1] R equals total Series resistance of Drain circuit 1 1E-6 1E-6 1E-6 1E-3 1E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance (Ω) Figure 9. Typical Drain-to-Source ON Figure 1. Resistance vs Drain Current PULSE DURATION = 1 µs DUTY CYCLE =.5% MAX TC=25 C = 1V R DS(ON), Drain-to-Source Resistance (Normalized).75 PULSE DURATION = 1 µs DUTY CYCLE =.5% MAX = 1V, I D = 5A I D, Drain Current (A) T J, Junction Temperature ( o C) Typical Drain-to-Source ON Resistance vs Junction Temperature Page 5 of 11

6 BV DSS, Drain-to-Source Breakdown Voltage (Normalized) Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature = V.7 I D = 25 µa (TH), Threshold Voltage (Normalized) = V DS I D = 25 µa Typical Threshold Voltage vs Junction Temperature T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage 1 1µs 1 C iss I D, Drain Current (A) OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J = MAX RATED, T C = 25 o C Single Pulse 1µ 1ms 1ms DC C, Capacitance (pf) = V, f = 1MHz C iss = C gs + C gd C oss C ds + C gd C rss = C gd C oss C rss V DS, Drain-to-Source Voltage (V) V DS, Drain Voltage (V) Figure 15. Typical Gate Charge vs Gate-to- Source Voltage Figure 16. Typical Body Diode Transfer Characteristics 12 15, Gate-to-Source Voltage (V) V DS = 19V V DS = 37V V DS = 56V Q G, Total Gate Charge (nc) I D = 75A I SD, Reverse Drain Current (A) o C 25 o C V SD, Source-to-Drain Voltage (V) = V Page 6 of 11

7 Test Circuits and Waveforms V DS I D I D V DS V DD Miller Region D.U.T. (TH) 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS V DD R G D.U.T. 1% t d(on) t rise t d(off) t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms Page 7 of 11

8 Test Circuits and Waveforms di/dt adj. Current Pump Double Pulse I D di/dt = 1A/µA D.U.T. V DD Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. Coutating Diode V DD V DD t AV 5Ω I AS t p I 2 AS L EAS = 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms Page 8 of 11

9 TO-22 Package For Assembly Lot Codes Ending With: xxxxxh H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B C D J E F G K H J K M M a b c d G A e e E D C F d a B b c e e1 Page 9 of 11

10 TO-22 Package For Assembly Lot Codes Ending With: xxxxxs H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B C J D E F G K H J K M M a b c d G A e e E D F C d a B b c e e1 Page 1 of 11

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