Features VSD006N08MS. Maximum ratings, at T j=25 C, unless otherwise specified. V Drain-Source breakdown voltage 80 V. Thermal Characteristics

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1 80/85A N-hannel Advanced Power MOSFET Feaures N-hannel,5 Logic Level onrol Enhancemen mode ery low on-resisance GS= % Avalanche es Pb-free lead plaing; ohs complian DS 80 DS(on),TYP@ GS= mω DS(on),TYP@ GS= mω D 85 A TO-252 Par D Package Type Marking Tape and reel informaion SD006N08MS TO N08M 2500PS/eel Maximum raings, a T j=25, unless oherwise specified Symbol Parameer aing Uni Drain-Source breakdown volage 80 (B)DSS S Diode coninuous forward curren T =25 85 A D oninuous drain curren@gs=10 T =25 85 A T = A DM Pulse drain curren esed 1 T = A EAS Avalanche energy, single pulsed 2 D=18A 81 mj AS Avalanche curren max L=0.5mH 50 A P D Maximum power dissipaion T = W GS Gae-Source volage ±20 TSTG T J Sorage and operaing emperaure range -55 o 175 Thermal haracerisics Symbol Parameer Typical Uni J Thermal esisance-juncion o ase 1.5 /W JA Thermal esisance Juncion-Ambien 40 /W opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016

2 80/85A N-hannel Advanced Power MOSFET Symbol Parameer ondiion Min. Typ. Max. Uni Saic Elecrical T = 25 (unless oherwise saed) (B)DSS DSS Drain-Source Breakdown olage GS=0 D=250μA 80 Zero Gae olage Drain urren(tc=25 ) DS=80,GS=0 1 μa Zero Gae olage Drain urren(tc=125 ) DS=80,GS=0 100 μa GSS GS(TH) DS(ON) DS(ON) Gae-Body Leakage urren GS=±20,DS=0 ±100 na Gae Threshold olage DS=GS,D=250μA Drain-Source On-Sae esisance3 GS=10, D=40A mω Drain-Source On-Sae esisance3 GS=4.5, D=20A mω Dynamic Elecrical T = 25 (unless oherwise saed) iss oss rss g g gs gd npu apaciance 5205 pf Oupu apaciance DS=30,GS=0, f=1mhz 400 pf everse Transfer apaciance 370 pf Gae esisance f=1mhz 1.65 Ω Toal Gae harge 102 n Gae-Source harge DS=40,D=30A, GS=10 16 n Gae-Drain harge 35 n Swiching haracerisics d(on) r d(off) f Turn-on Delay Time 28 ns Turn-on ise Time Turn-Off Delay Time DD=40, D=10A, G=6.8Ω, GS= ns ns Turn-Off Fall Time 23 ns Source- Drain Diode haracerisics@ T = 25 (unless oherwise saed) SD rr rr NOTE: Forward on volage SD=40A,GS= everse ecovery Time Tj=25,sd=20A, 30 ns GS=0 everse ecovery harge di/d=500a/μs 115 n 1 epeiive raing; pulse widh limied by max. juncion emperaure. 2 Limied by TJmax, saring TJ = 25, L = 0.5mH,G = 25Ω, AS = 18A, GS =10. Par no recommended for use above his value 3 Pulse widh 300μs; duy cycle 2%. opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016

3 Typical haracerisics SD006N08MS 80/85A N-hannel Advanced Power MOSFET DS, Drain -Source olage () Fig1. Typical Oupu haracerisics Tj - Juncion Temperaure ( ) Fig2. GS(TH) Gae -Source olage s.tj GS, Gae -Source olage () Fig3. Typical Transfer haracerisics Tj - Juncion Temperaure ( ) Fig4. Normalized On-esisance s. Tj SD, everse Drain urren (A) D - Drain urren (A) D, Drain-Source urren (A) Normalized On esisance D, Drain-Source urren (A) GS(TH), Gae -Source olage () SD, Source-Drain olage () Fig5. Typical Source-Drain Diode Forward olage opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016 DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area

4 Typical haracerisics SD006N08MS 80/85A N-hannel Advanced Power MOSFET DS, Drain-Source olage () Fig7. Typical apaciance s.drain-source olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage ZθJ Normalized Transien Thermal esisance, apaciance (pf) GS, Gae-Source olage () Pulse Widh (s) Fig9. Normalized Maximum Transien Thermal mpedance Fig10. Unclamped nducive Tes ircui and waveforms Fig11. Swiching Time Tes ircui and waveforms opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016

5 80/85A N-hannel Advanced Power MOSFET TO-252 Package Ouline Daa DMENSONS ( uni : mm ) Symbol Min Typ Max Symbol Min Typ Max A A b b b c D D E E e 2.28 e H D L L L w 0.20 y 0.20 usomer Service Sales and Service: sales@vgsemi.com anguard Semiconducor O., LTD TEL: (86-755) FAX: (86-755) WEB: opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016

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