Features VSD006N08MS. Maximum ratings, at T j=25 C, unless otherwise specified. V Drain-Source breakdown voltage 80 V. Thermal Characteristics
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1 80/85A N-hannel Advanced Power MOSFET Feaures N-hannel,5 Logic Level onrol Enhancemen mode ery low on-resisance GS= % Avalanche es Pb-free lead plaing; ohs complian DS 80 DS(on),TYP@ GS= mω DS(on),TYP@ GS= mω D 85 A TO-252 Par D Package Type Marking Tape and reel informaion SD006N08MS TO N08M 2500PS/eel Maximum raings, a T j=25, unless oherwise specified Symbol Parameer aing Uni Drain-Source breakdown volage 80 (B)DSS S Diode coninuous forward curren T =25 85 A D oninuous drain curren@gs=10 T =25 85 A T = A DM Pulse drain curren esed 1 T = A EAS Avalanche energy, single pulsed 2 D=18A 81 mj AS Avalanche curren max L=0.5mH 50 A P D Maximum power dissipaion T = W GS Gae-Source volage ±20 TSTG T J Sorage and operaing emperaure range -55 o 175 Thermal haracerisics Symbol Parameer Typical Uni J Thermal esisance-juncion o ase 1.5 /W JA Thermal esisance Juncion-Ambien 40 /W opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016
2 80/85A N-hannel Advanced Power MOSFET Symbol Parameer ondiion Min. Typ. Max. Uni Saic Elecrical T = 25 (unless oherwise saed) (B)DSS DSS Drain-Source Breakdown olage GS=0 D=250μA 80 Zero Gae olage Drain urren(tc=25 ) DS=80,GS=0 1 μa Zero Gae olage Drain urren(tc=125 ) DS=80,GS=0 100 μa GSS GS(TH) DS(ON) DS(ON) Gae-Body Leakage urren GS=±20,DS=0 ±100 na Gae Threshold olage DS=GS,D=250μA Drain-Source On-Sae esisance3 GS=10, D=40A mω Drain-Source On-Sae esisance3 GS=4.5, D=20A mω Dynamic Elecrical T = 25 (unless oherwise saed) iss oss rss g g gs gd npu apaciance 5205 pf Oupu apaciance DS=30,GS=0, f=1mhz 400 pf everse Transfer apaciance 370 pf Gae esisance f=1mhz 1.65 Ω Toal Gae harge 102 n Gae-Source harge DS=40,D=30A, GS=10 16 n Gae-Drain harge 35 n Swiching haracerisics d(on) r d(off) f Turn-on Delay Time 28 ns Turn-on ise Time Turn-Off Delay Time DD=40, D=10A, G=6.8Ω, GS= ns ns Turn-Off Fall Time 23 ns Source- Drain Diode haracerisics@ T = 25 (unless oherwise saed) SD rr rr NOTE: Forward on volage SD=40A,GS= everse ecovery Time Tj=25,sd=20A, 30 ns GS=0 everse ecovery harge di/d=500a/μs 115 n 1 epeiive raing; pulse widh limied by max. juncion emperaure. 2 Limied by TJmax, saring TJ = 25, L = 0.5mH,G = 25Ω, AS = 18A, GS =10. Par no recommended for use above his value 3 Pulse widh 300μs; duy cycle 2%. opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016
3 Typical haracerisics SD006N08MS 80/85A N-hannel Advanced Power MOSFET DS, Drain -Source olage () Fig1. Typical Oupu haracerisics Tj - Juncion Temperaure ( ) Fig2. GS(TH) Gae -Source olage s.tj GS, Gae -Source olage () Fig3. Typical Transfer haracerisics Tj - Juncion Temperaure ( ) Fig4. Normalized On-esisance s. Tj SD, everse Drain urren (A) D - Drain urren (A) D, Drain-Source urren (A) Normalized On esisance D, Drain-Source urren (A) GS(TH), Gae -Source olage () SD, Source-Drain olage () Fig5. Typical Source-Drain Diode Forward olage opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016 DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area
4 Typical haracerisics SD006N08MS 80/85A N-hannel Advanced Power MOSFET DS, Drain-Source olage () Fig7. Typical apaciance s.drain-source olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage ZθJ Normalized Transien Thermal esisance, apaciance (pf) GS, Gae-Source olage () Pulse Widh (s) Fig9. Normalized Maximum Transien Thermal mpedance Fig10. Unclamped nducive Tes ircui and waveforms Fig11. Swiching Time Tes ircui and waveforms opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016
5 80/85A N-hannel Advanced Power MOSFET TO-252 Package Ouline Daa DMENSONS ( uni : mm ) Symbol Min Typ Max Symbol Min Typ Max A A b b b c D D E E e 2.28 e H D L L L w 0.20 y 0.20 usomer Service Sales and Service: sales@vgsemi.com anguard Semiconducor O., LTD TEL: (86-755) FAX: (86-755) WEB: opyrigh anguard Semiconducor o., Ld ev 1.0 Oc.8 h, 2016
Features VSD013N10MS TO-252. Maximum ratings, at T j=25 C, unless otherwise specified. V Drain-Source breakdown voltage 100 V. Thermal Characteristics
SD013N10MS 100/52A N-hannel Advanced Power MOSFET Feaures N-hannel Enhancemen mode ery low on-resisance DS(on) @ GS=4.5 Fas Swiching DS 100 DS(on),TYP@ GS=10 11 mω DS(on),TYP@ GS=4.5 12 mω D 52 A TO-252
More informationStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing
More informationStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion H037N06L0650P designed by he rench processing echniques o achieve exremely
More informationfunctional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
H037N06L Feaures Low On-Resisance Fas Swiching 100% Avalanche Tesed Repeiive Avalanche Allowed up o Tjmax Lead-Free, RoHS omplian Descripion H037N06L designed by he rench processing echniques o achieve
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UNISONIC TECHNOLOGIES CO., LTD 4 Amps, 3 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT4N3 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance
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UNISONIC TECHNOLOGIES CO., LTD 2N7002K 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent R DS(ON), low gate charge and low gate voltages
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General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
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UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
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MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive
More informationSymbol SRC60R030. T: TO-247 TR: Tape & Reel
General Description The Sanrise is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching
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UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
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Silicon N-Channel Power MOSFET CS31N03 A4 General Description: CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss,
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UNISONIC TECHNOLOGIES CO., LTD 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
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UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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