<Full SiC Modules> FMF600DX2-24A HIGH POWER SWITCHING USE INSULATED TYPE

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Curtis Hamilton
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Dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. Drain curren I D...... 6 A Drain-Source volage D S X... 2 Maximum juncion emperaure T v j m ax.

Dimension in mm INTERNAL CONNECTION Terminal 2 3 4 6 7 8 9 2 3 4 6 code ap an bn bp TH TH2 DN bout aout DP Tolerance oherwise specified Division of Dimension. o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.

1 Dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. Drain curren I D A Drain-Source volage D S X... 2 Maximum juncion emperaure T v j m ax... C Silicon Carbide MOSFET + Silicon Carbide Schoky Barrier Diode Fla base Type Copper base plae OUTLINE DRAWING & INTERNAL CONNECTION RoHS Direcive complian Recognized under UL7, File E3238 Dimension in mm INTERNAL CONNECTION Terminal code ap an bn bp TH TH2 DN bout aout DP Tolerance oherwise specified Division of Dimension. o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±. over 3 o 2 ±.8 over 2 o 4 ±.2 Tolerance ap and bp, an and bn mus be conneced exernally., are erminal for drain curren sensing. The raio of /, / is approximaely :6 Publicaion Dae : January 29 CMH-73-A er..

2 MAXIMUM RATINGS (Tvj=2 C, unless oherwise specified) Symbol Iem Condiions Raing Uni DSX Drain-source volage GS=- 2 GSS Gae-source volage D-S shor-circuied ±2 I D DC, Tc=3 (Noe.2) 6 Drain curren I DRM Pulse, Repeiive (Noe.3), T vj= (Noe.4) 9 P o Toal power dissipaion TC=2 C (Noe. 2,) 29 W (Noe.) IS DC 6 Source curren (Noe.) ISRM Pulse, Repeiive (Noe.3), Tvj= 9 i s o l Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC min 4 T v j m a x Maximum juncion emperaure Insananeous even (overload) C T c m a x Maximum case emperaure (Noe.2) 2 C T vjop Operaing juncion emperaure Coninuous operaion (under swiching) -4~+ C T s g Sorage emperaure - -4~+2 C ELECTRICAL (T vj=2 C, unless oherwise specified) I DSX Symbol Iem Condiions (Noe.9) Drain-source cu-off curren Limis Min. Typ. Max. DS=DSX, GS= DS=8, GS= I G SS Gae-source leakage curren GS=GSS, D-S shor-circuied - -. μa G S( h) Gae-source hreshold volage ID=23 ma, DS=..6 r DS(on) (Chi p) DS(on) (chi p) DS(on) (ermi nal ) C i s s Saic drain-source On-sae resisance Saic drain-source On-sae volage Saic drain-source On-sae volage Inpu capaciance ID=6 A, GS= (Noe.6) ID=6 A, GS= (Noe.6) ID=6 A, GS= (Noe.6) T vj=2 C T vj= C T vj=2 C T vj=2 C T vj= C T vj=2 C T vj=2 C T vj= C C o s s Oupu capaciance DS=, GS= C r s s Reverse ransfer capaciance -. - Q G Gae charge DD=6, ID=6 A, GS= nc d ( o n ) Turn-on delay ime - - r Rise ime d ( o f f ) Turn-off delay ime DD=6, ID=6 A, GS=± RG=2.Ω, Inducive load f Fall ime Q C Drain-source charge μc SD (Noe.) (Chip) SD (Noe.) (erminal) Source-drain volage Source-drain volage IS=6 A (Noe.6) GS=- IS=6 A (Noe.6) GS=- T vj=2 C T vj=2 C T vj= C T vj=2 C T vj=2 C T vj= C E on Turn-on swiching energy per pulse DD=6, I D/I S=6 A, E off Turn-off swiching energy per pulse GS=±, R G=2.Ω, T vj= E rec (Noe.) Diode swiching energy per pulse Inducive load R DD'+SS' Inernal lead resisance P-N, TC=2 (Noe.2) -. - mω r g Inernal gae resisance Per swich Ω L s Inernal sray inducance P-N - - nh A A Uni ma mω nf ns mj Publicaion Dae : January 29 2 CMH-73-A er..

3 THERMAL RESISTANCE Symbol Iem Condiions Limis Min. Typ. Max. R h ( j - c ) Q Juncion o case, per inverer swich R h ( j - c)d (Noe. 2) Thermal resisance Juncion o case, per inverer FWD R h ( c - s ) Conac hermal resisance (Noe.2) Case o hea sink, per module, (Noe.8) Thermal grease applied Uni K/kW - - K/kW NTC THERMISTOR PART Symbol Iem Condiions Limis Min. Typ. Max. Uni R 2 Zero-power resisance TC=2 C (Noe.2) kω ΔR/R Deviaion of resisance R=493 Ω, TC= C (Noe.2) % B (2/ ) B-consan Approximae by equaion (Noe.7) K P 2 Power dissipaion TC=2 C (Noe.2) - - mw Publicaion Dae : January 29 3 CMH-73-A er..

4 MECHANICAL Symbol Iem Condiions Limis Min. Typ. Max. M Main erminals M 6 screw Mouning orque M s Mouning o hea sink M screw d s Creepage disance mm d a Clearance mm m mass g e c Flaness of base plae On he cenerline X, Y (Noe.) ± - + μm *: This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen. (RoHS) direcive 2/6/EU. Noe. Represen raings and characerisics of he ani-parallel, source-drain free wheeling diode (FWD). 2. Case emperaure (TC) and hea sink emperaure (T s ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T v j ) does no exceed T vjm a x raing. 4. Juncion emperaure (T v j ) should no increase beyond T v j m a x raing.. The base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. Uni N m +:Convex -:Concave X Y mouning side mouning side -:Concave mouning side +:Convex 6. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. R 7. B ln( 2 ( 2/ ) )/( ) R T2 T R2: resisance a absolue emperaure T2 [K]; T2=2 [ C]+273.=298. [K] R: resisance a absolue emperaure T [K]; T= [ C]+273.=323. [K] 8. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 9. Per swich (ex. Tr chips oal in page.6) RECOMMDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. Uni DD (DC) Supply volage Applied across ap -an/ bp-bn erminals D DC supply volage(conrol) Applied across DP-/DN- erminals GS(+) Gae-Source posiive drive volage Applied across -,- erminals GS(-) Gae-Source negaive drive volage Applied across -/- erminals R G Exernal gae resisance (Noe.) Per swich 2. - Ω d(scoff) Gae cuoff delay ime afer SC oupu GS=, RG=2.Ω, Tvj= μs f c Swiching frequency GS=±, RG=2.Ω, DD=6, Tvj= - - khz Noe. The value of exernal gae resisance should be considered he surge volage no o exceed he raing volage in he wors sysem condiion. Publicaion Dae : January 29 4 CMH-73-A er..

d(sc) Drain Curren I D(SC) Proecion Proecion: : GS GS Limiing (Module) Proecion2 Proecion2: : Gae Drive Turn-Off Turn-off (User) (User)

5 SC DETECTION & PROTECTION Drive Circui (User) Shor Circui curren Proecion3 Proecion2 Proecion Example of applicaion (SC deecion & proecion) INPUT Inpu (primary (Primary a a phoocoupler) SC Signal (module (Module oupu) d(scoff) GS(+) Gae-Source olage GS(SC) GS(-) d(sc) Drain Curren I D(SC) Proecion Proecion: : GS GS Limiing (Module) Proecion2 Proecion2: : Gae Drive Turn-Off Turn-off (User) (User) Proecion3 Proecion3: : Feedback o o Inpu Inpu Signal Signal (User) (User) Diagram of SC deecion & proecion Publicaion Dae : January 29 CMH-73-A er..

6 CHIP LOCATION (Top view) Dimension in mm, olerance: ± mm Tr/Tr2: SiC-MOS, Di2/Di2: SiC-SBD, Th: NTC hermisor The erminal ap-bp, an-bn, aout-bout mus be conneced wih each oher. When he curren sensor is no used, -, - mus be shor-circuied. Inernal connecion Publicaion Dae : January 29 6 CMH-73-A er..

7 TEST CIRCUIT AND WAEFORMS i S v GS ~ 9 % - GS Load + DD i D ~ 9 % i S A I S Q C =. I + GS - GS R G vgs vds i D A d ( o n ) r d ( o ff ) % f I Swiching characerisics es circui and waveforms(x: conneced a* and b*) Q C es waveform IS ISM SD I DM I D i C I D I CM I DM DD DS DD CC DD v CE DS A. I DM. DD.. CC DD.2 I CM DM i i MOSFET Turn-on swiching energy MOSFET Turn-off swiching energy Diode swiching energy TEST CIRCUIT i Turn-on / Turn-off swiching energy and Diode swiching energy es waveforms (Inegral ime insrucion drawing) i GS= G-S shorcircuied ID G-S shorcircuied GS= ID Tr Tr2 D S ( o n) es circui (x: Conneced a* and b*) GS=- G-S shorcircuied IS G-S shorcircuied GS=- IS GS= G-S shorcircuied IS G-S shorcircuied GS= IS Di Di2 Tr&Di Tr2&Di2 SD es circui (x: Conneced a* and b*), GS=- SD es circui (x: Conneced a* and b*), GS= Publicaion Dae : January 29 7 CMH-73-A er..

8 PERFORMANCE CURES OUTPUT DRAIN-SOURCE ON STATE OLTAGE T vj=2 C Chip GS= Chip DRAIN CURRT Id (A) GS= DRAIN-SOURCE ON-STATE OLTAGE DS(on) () T vj=2 C T vj= C T vj=2 C DRAIN-SOURCE OLTAGE ds () DRAIN CURRT I D (A) DRAIN-SOURCE ON STATE OLTAGE T vj=2 C Chip DRAIN-SOURCE ON-STATE OLTAGE DS(on) () A 6A ID=2 A GATE-SOURCE OLTAGE GS () Publicaion Dae : January 29 8 CMH-73-A er..

9 PERFORMANCE CURES FREE WHEELING DIODE FORWARD SOURCE-DRAIN ON STATE OLTAGE GS=- Chip GS= Chip 2 2 T vj=2 C T vj=2 C T vj= C SOURCE CURRT IS (A) T vj=2 C SOURCE CURRT IS (A) T vj= C T vj=2 C SOURCE-DRAIN OLTAGE SD () SOURCE-DRAIN ON-STATE OLTAGE SD () CAPACITANCE GATE CHARGE G-S shor-circuied, T vj=2 C I D=6 A, T vj=2 C 2 C i s s CAPACITANCE (nf) C o s s C r s s GATE-SOURCE OLTAGE GS () DRAIN-SOURCE OLTAGE DS () GATE CHARGE Q G (nc) Publicaion Dae : January 29 9 CMH-73-A er..

10 PERFORMANCE CURES HALF-BRIDGE SWITCHING HALF-BRIDGE SWITCHING DD=6, GS=±, R G=2. Ω, DD=6, GS=±, I D=6 A, T vj=2 C, INDUCTIE LOAD T vj=2 C, INDUCTIE LOAD d ( o ff) SWITCHING TIME (ns) f d ( o n ) SWITCHING TIME (ns) d ( o ff) d ( o n ) f r r DRAIN CURRT I D (A) EXTERNAL GATE RESISTANCE R G (Ω) (Noe.) HALF-BRIDGE SWITCHING HALF-BRIDGE SWITCHING DD=6, GS=±, R G=2.Ω, T vj=2 C, INDUCTIE LOAD, PER PULSE DD=6, GS=±, I D/I S=6 A, T vj=2 C, INDUCTIE LOAD, PER PULSE E o f f 7 E on SWITCHING ERGY (mj) DIODE SWITCHING ERGY (mj) 2 E on SWITCHING ERGY (mj) DIODE SWITCHING ERGY (mj) E o f f E r ec DRAIN CURRT I D (A) SOURCE CURRT I S (A) E r ec EXTERNAL GATE RESISTANCE R G (Ω) (Noe.) Publicaion Dae : January 29 CMH-73-A er..

11 PERFORMANCE CURES RECOMMDED GATE RESISTANCE (MINIMUM) RECOMMDED GATE RESISTANCE (MINIMUM) 9 TURN ON, GS=± 2 TURN OFF, GS=± 8 I D=2A 8 I D=2A GATE ON RESISTANCE (Ω) I D=9A I D=6A GATE OFF RESISTANCE (Ω) I D=9A I D=6A DRAIN-SOURCE OLTAGE DS () (Noe.) TRANSIT THERMAL IMPEDANCE (MAXIMUM) DRAIN-SOURCE OLTAGE DS () (Noe.) NTC hermisor par TEMPERATURE Single pulse, T C=2 C R h ( j - c ) Q=7K/kW, R h ( j - c ) D=82K/kW NORMALIZED TRANSIT THERMAL RESISTANCE Z h ( j - c) RESISTANCE R (kω) TIME (S) TEMPERATURE T ( C) Noe: The characerisics curves are presened for reference only and no guaraneed by producion es, unless oherwise noed. Publicaion Dae : January 29 CMH-73-A er..

12 Keep safey firs in your circui designs! This produc is designed for indusrial applicaion purpose. The performance, he qualiy and suppor level of he produc is guaraneed by Cusomer's Sd. Spec.. Misubishi Elecric Corporaion pus is reasonable effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem by he reliabiliy lifeime such as Power Cycle, Thermal Cycle or ohers, or o be used under special circumsances(e.g. high humidiy, dusy, saly, highlands, environmen wih los of organic maer / corrosive gas / explosive gas, or siuaion which erminal of semiconducor producs is received srong mechanical sress). In he cusomer's research and developmen, please evaluae i no only wih a single semiconducor produc bu also in he enire sysem, and judge wheher i's applicable. Furhermore, rouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis (e.g. appropriae fuse or circui breaker beween a power supply and semiconducor producs), (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams and chars represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, and chars, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Therefore, his produc should no be used in such applicaions. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. In he case of new requiremen is available, his maerial will be revised upon consulaion. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or re-expor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. Generally he lised company name and he brand name are he rademark. 28 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. Publicaion Dae : January 29 2 CMH-73-A er..

<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE

<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Cahode Common) Forward curren...... 2 0 0 A Repeiive peak reverse volage V RRM... 1 2 0 0 V Maximum juncion emperaure T jmax... 1 5 0 C Fla base Type Copper base plae RoHS Direcive