DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996
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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D7 Supersedes data of April Sep 7
2 FEATURES Small plastic SMD package Switching speed:. 5 ns General application Continuous reverse voltage:. V Repetitive peak reverse voltage:. 5 V Repetitive peak forward current:. 65 ma. APPLICATIONS General purpose where high breakdown voltages are required. DESCRIPTION The consists of two general purpose diodes fabricated in planar technology, and encapsulated in the small plastic SMD SOT43 package. The diodes are not connected. handbook, halfpage 4 3 PINNING PIN DESCRIPTION cathode (k) cathode (k) 3 anode (a) 4 anode (a) 4 3 Top view MAM59 Marking code: L3. Fig. Simplified outline (SOT43) and symbol. 996 Sep 7
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage 5 V V RRM repetitive peak reverse voltage series connection 5 V V R continuous reverse voltage V V R continuous reverse voltage series connection 4 V continuous forward current single diode loaded; see Fig.; 5 ma note double diode loaded; see Fig.; 5 ma note RM repetitive peak forward current 65 ma SM non-repetitive peak forward current square wave; T j =5 C prior to surge; see Fig.4 t=µs 9 A t = µs 3 A t = ms.7 A P tot total power dissipation T amb =5 C; note 5 mw T stg storage temperature C T j junction temperature 5 C Note. Device mounted on an FR4 printed-circuit board. 996 Sep 7 3
4 ELECTRICAL CHARACTERISTICS T j =5 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V F forward voltage see Fig.3 = ma. V = ma.5 V V F forward voltage series connection; see Fig.3 = ma. V = ma.5 V I R reverse current see Fig.5 V R = V na V R = V; T j = 5 C µa I R reverse current series connection V R = 4 V na V R = 4 V; T j = 5 C µa C d diode capacitance f = MHz; V R = ; see Fig.6 5 pf series connection; f = MHz;.5 pf V R = ; see Fig.6 t rr reverse recovery time when switched from = 3 ma to I R = 3 ma; R L = Ω; measured at I R = 3 ma; see Fig.7 5 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 36 K/W R th j-a thermal resistance from junction to ambient note 5 K/W Note. Device mounted on an FR4 printed-circuit board. 996 Sep 7 4
5 GRAPHICAL DATA 3 MBD33 6 handbook, halfpage MBG384 (ma) (ma) single diode loaded 4 () () (3) double diode loaded Device mounted on an FR4 printed-circuit board. Fig. T amb ( o C) Maximum permissible continuous forward current as a function of ambient temperature. () T j = 5 C; typical values. () T j =5 C; typical values. (3) T j =5 C; imum values. Fig.3 V F (V) Forward current as a function of forward voltage. handbook, full pagewidth MBG73 SM (A) 3 t p (µs) 4 Based on square wave currents. T j =5 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 996 Sep 7 5
6 handbook, halfpage MBG38. handbook, halfpage MBG447 I R (µa) C d (pf).8 () ().6.4 T j ( o C) V R (V) () V R = V; imum values. () V R = V; typical values. f = MHz; T j =5 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth R S = 5 Ω D.U.T. SAMPLING OSCILLOSCOPE tr % t p t t rr t V = V R I F x R S R i = 5 Ω MGA88 V R 9% () input signal output signal () I R = 3 ma. Fig.7 Reverse recovery voltage test circuit and waveforms. 996 Sep 7 6
7 PACKAGE OUTLINE handbook, full pagewidth A B. M A B o. o o M A B MBC845.7 TOP VIEW Dimensions in mm. Fig.8 SOT43. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Sep 7 7
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