Power MOSFET Stage for Boost Converters

Transcription

1 UM 33-6PH Power MOSFET Stage for Boost Converters Module for Power Factor Correction Single Phase Boost Diode MOSFET Rectifier RRM = 16 RRM = 6 S = 6 = 16 I F25 = 6 25 = I FSM = 3 F (3) = 2.24 R DS(on) = 12 mω Part name (Marking on product) UM33-6PH D1 2 D3 4 6 D D2 D4 T DT Features: Package with DCB ceramic base plate Soldering connectio for PCB mounting Isolation voltage 36 ~ Low R DS(on) Polar MOSFET Low package inductance for high speed switching SONIC boost diode - fast and soft reverse recovery - low operating forward voltage dvantages: 3 functio in one package Output power up to 8 kw No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Fits easily to all available PFC controller ICs Package: "1-Pack" standard outline Iulated copper base plate pplication: Power factor pre-conditioner for SMPS, UPS, battery chargers and inverters Boost topology for SMPS including 1~ rectifier bridge Power supply for welding equipment IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 1-8

2 UM 33-6PH MOSFET T Ratings Symbol Definitio Conditio min. typ. max. Unit S drain source voltage = 25 C 6 S M max. DC gate voltage max. traient gate source voltage continuous traient 25 drain current T C = 25 C 8 T C = 8 C P tot total power dissipation T C = 8 C W R DS(on) drain source on resistance = 3 ; GE = 1 = 25 C (th) gate source threshold voltage I C = 8 m; = = 25 C SS drain source leakage current = S ; = = 25 C I GSS gate source leakage current = ±2 ; = ± n C iss input capacitance = 25 ; = ; f = 1 MHz 8. nf Q G(on) total gate charge = 3 ; = 1 ; = 165 nc t d(on) t r t d(off) t f t d(on) t r t d(off) t f R thjc R thjh turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load = 25 C = 38 ; = 2 = /1 ; = 4.7 W eff = 5.5 W 1) inductive load = 38 ; = 2 = /1 ; = 4.7 W eff = 5.5 W 1) thermal resistance junction to case thermal resistance case to heatsink with heat trafer paste (IXYS test setup).18 1) eff includes the driver resistance of.8 W ±2 ± mω mω µ µ IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 2-8

3 UM 33-6PH Boost Diode D Ratings Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 25 C 6 I F25 I F8 forward current T C = 25 C T C = 8 C F forward voltage I F = 3 ; GE = = 25 C I R reverse current R = RRM = 25 C µ m Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = 38 di F /dt = -79 /µs 2) = 25 C I F = µc Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = 38 di F /dt = -7 /µs 2) I F = µc R thjc R thjh thermal resistance junction to case thermal resistance case to heatsink with heat trafer paste (IXYS test setup) ) Test setup: MOSFET T driven with eff = 5.5 W and = /1 Input Rectifier Bridge D1 - D4 Ratings Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage = 25 C 16 average forward output current sine 18 T C = 8 C I FM max. average forward current (per diode) rect.; d =.5 T C = 8 C I F25 forward current DC T C = 25 C I F8 forward current DC T C = 8 C I FSM max. forward surge current t = 1 ms; sine Hz = 45 C I 2 t I 2 t value for fusing t = 1 ms; sine Hz = 45 C P tot total power dissipation T C = 8 C 11 W F forward voltage I F = = 25 C = 1 C I R reverse current R = RRM = 25 C = 1 C R thjc R thjh thermal resistance junction to case thermal resistance case to heatsink (per diode) with heat trafer paste (IXYS test setup) s 2 s µ m Module Ratings Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature ISOL isolation voltage I ISOL < 1 m; /6 Hz; 1 sec. 36 ~ M d mounting torque (M5) Nm Weight 35 g T C = 25 C unless otherwise stated C C C IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 3-8

4 UM 33-6PH Outline Drawing Dimeio in mm (1 mm =.394 ) Logo XXX XX-XXXXX Part name YYCW Date Code Product Ordering Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard UM 33-6PH UM 33-6PH Box IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 4-8

5 UM 33-6PH SS = 1 m S 1.4 normalized T J [ C] Fig. 1 Drain source breakdown voltage S versus junction temperature [] T J T J = 25 C [] Fig. 2 Typical trafer characteristics [] 7 7 T J = 25 C T J = 15/ = 15/ [] [] [] Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics = = 1 = normalized 1.5 normalized 2 1 [mω] 1.6 normalized 6.5/7/1/ [ C] Fig. 5 Drain source on-state resistance versus junction temperature [] Fig. 6 Drain source on-state resistance versus normalized to at = 1 and = 2 IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 5-8

6 UM 33-6PH = 6 = [] 6 4 [] Q G [nc] Fig. 7 Gate charge characteristics T C [ C] Fig. 8 Drain current versus case temperature T C t d(on) [] = 4.7 Ω = 38 = /1 t r t 4 [] 3 [].6.4 = 4.7 Ω = 38 = /1 t d(off) 12 8 t [] t f 4 E rec boost [] [] Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching Fig. 1 Typ. turn-off energy and switching times versus drain current, inductive switching, E rec [] = 2 = 38 = /1 t d(on) t r t [] [].2 = 2 = 38 = /1 t d(off) t [].2 2 E rec boost t f Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 6-8

7 UM 33-6PH 8 7 R = R = 38 t rr 6 2 I RM 16 [] 1 [] Fig. 13 Reverse recovery time t rr of the boost diode versus of boost MOSFET Fig. 14 Reverse recovery current I RM of the boost diode versus of the boost MOSFET.9.8 R = R = 38 Q RR [µc] E rec [] Fig. 15 Reverse recovery charge Q RR I RM of the boost diode versus Fig. 16 Reverse recovery energy E rec of the boost diode versus Q RR [µc] Ω 6.8 Ω 5.6 Ω Ω 1 I F [] C 125 C 1 C di/dt [(µs] Fig. 17 Typ. turn off characteristics of the boost diode versus di/dt F [] Fig. 18 Forward characteristics boost diode IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 7-8

8 UM 33-6PH f = Hz R =.8 RRM R = 4 I F 4 I FSM 2 = 45 C I 2 t 3 = 45 C [] =125 C = 25 C [] 1 1 [ 2 s] F [] Fig. 19 Forward current vs. voltage drop of input rectifier diode t [s] Fig. 2 Non-repetitive peak surge current (Rectifier Diodes) 1 1 t [ms] Fig. 21 I 2 t for fusing (Rectifier Diodes).8 Boost Diode Rectifier Diode.6 Z thjh.4 [].2 Fig. 22 Typ. traient thermal impedances of Boost Diode and Rectifier Diode t [ms].2 MOSFET.15 Z thjh.1 [] Fig. 23 Typ. traient thermal impedances of MOSFET t [ms] IXYS reserves the right to change limits, test conditio and dimeio b 21 IXYS ll rights reserved 8-8