Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Transcription

1 MTI85W1GC Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package S = 1 V 25 = 12 R DSon typ. = 3.2 mw Part number MTI85W1GC L+ G1 G3 G5 Surface Mount Device S1 S3 S5 L1 L2 L3 G2 G4 G6 S2 S4 S6 L Features / dvantages: MOSFETs in trench technology: low R DSon optimized intriic reverse diode Package: high level of integration high current capability (3 max.) aux. terminals for MOSFET control terminals for soldering or welding connectio isolated DCB ceramic base plate with optimized heat trafer Space and weight savings pplicatio: C drives in automobiles electric power steering starter generator in industrial vehicles propulsion drives fork lift drives in battery supplied equipment Package: ISOPLUS-DIL High level of integration RoHS compliant High current capability ux. Terminals for MOSFET control Terminals for soldering or welding connectio Space and weight savings Terms & Conditio of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specificatio of our components may not be coidered as an assurance of component characteristics. The information in the valid application- and assembly notes must be coidered. Should you require product information in excess of the data given in this product data sheet or which concer the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applicatio, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures g 217 IXYS ll rights reserved 1-7

2 MTI85W1GC MOSFETs Ratings Symbol Definitio Conditio min. typ. max. Unit S drain source breakdown voltage = 25 C to 15 C 1 V M gate source voltage max. traient gate source voltage 25 continuous drain current T C = 25 C 9 T C = 9 C I F25 forward current T C = 25 C I F9 T C = 9 C 1) static drain source on resistance on-chip level at = 25 C = 8 ; = 1 V = 125 C ±15 ± V V 4 mw mw (th) gate threshold voltage = 15 µ; = = 25 C V SS drain source leakage current = S ; = V = 25 C = 125 C 1 I GSS gate source leakage current = ±2 V; = V 5 n gate resistance on-chip level W Q g Q gs Q gd t d(on) t r t d(off) t f E rec(off) total gate charge gate source charge gate drain (Miller) charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses = 1 V; = 5 V; = 8 inductive load = 125 C = 1 V; = 5 V = 8 ; = 39 W R thjc thermal resistance junction to case K/W R thjh thermal resistance junction to heatsink with heat trafer paste (IXYS test setup) 1.5 K/W 1) = ( + 2 R Pin to Chip ) µ µ nc nc nc µj µj µj Source-Drain Diode V SD source drain voltage I F = 8 ; = V = 25 C.9 V Q RM I RM t rr reverse recovery charge max. reverse recovery current reverse recovery time V R = 5 V; I F = 8 ; = 39 W = 125 C di/dt = 15 /µs µc g 217 IXYS ll rights reserved 2-7

3 MTI85W1GC Package ISOPLUS-DIL Ratings Symbol Definitio Conditio min. typ. max. Unit I RMS RMS current per pin in main current paths (P+, N, L1, L2, L3) may be additionally limited by external connectio (PCB tracks) 3 T stg storage temperature C T op operation temperature C virtual junction temperature C V ISOL isolation voltage t = 1 second 12 V 5/6 Hz, RMS, I ISOL < 1 m t = 1 minute 1 V R pin-chip resistance terminal to chip = ( + 2 R pin to chip ).6 mw C P coupling capacity between shorted pi and back side metallization 16 pf F C mounting force with clip 5 25 N Weight 13 g XXXXXXXXXXXX YYYYYY yywwc DCB backside ssembly Line Date Code Type Number ssembly Code Part number M = MOSFET T = Trench I = Infineon Trench 85 = Current Rating W = 6-Pack 1 = Reverse Voltage [V] GC = ISOPLUS-DIL Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MTI85W1GC-SMD MTI85W1GC Tube g 217 IXYS ll rights reserved 3-7

4 MTI85W1GC Outlines ISOPLUS-DIL L+ G1 G3 G5 S1 S3 S5 L1 L2 L3 G2 G4 G6 S2 S4 S6 L g 217 IXYS ll rights reserved 4-7

5 MTI85W1GC 25 S norm. [V] SS = 1 m = 25 V = 125 C = 25 C [ C] Fig. 1 Drain source breakdown voltage S vs. junction temperature [V] Fig. 2 Typ. trafer characteristics = 6.5 V 7 V 1 V 15 V 2 V 6 V 5.5 V 5 V = 6.5 V 7 V 1 V 15 V 2 V 6 V 5.5 V 5 V 5 = 25 C [V] Fig. 3 Typ. output characteristics (25 C) [V] Fig. 4 Typ. output characteristics (125 C) = 1 V = V norm normalized [m ] norm = 25 C 15 V 2 V 7 V 1 V 5.5 V 6 V 6.5 V [ C] Fig. 5 Drain source on-state resistance versus junction temperature Fig. 6 Drain source on-state resistance versus g 217 IXYS ll rights reserved 5-7

6 MTI85W1GC 1 8 = 1 = 25 C = 2 V = 175 C [V] 6 4 = 5 V Q G [nc] Fig. 7 Typical turn on gate charge T C [ C] Fig. 8 Drain current vs. case temperature T C (chip capability) [µj] = 5 V = /1 V = 39 E rec(off) x1 t d(on) t r t [] [mj] = 5 V = /1 V = 39 t d(off) t f t [] Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching Fig. 1 Typ. turn-off energy and switching times versus drain-current, inductive switching [mj] = 5 V = /1 V = 8 E rec(off) x [ ] t d(on) Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching t r t [] [mj] = 5 V = /1 V = [ ] t d(off) Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching t f t [] g 217 IXYS ll rights reserved 6-7

7 MTI85W1GC I RM I F = 8 V R = 5 V t RM t RM [] Q RM [µc] I F = 8 V r = 5 V I RM di F /dt [/µs] Fig. 13 Reverse recovery time t RM of the body diode vs. di F /dt di F /dt [/µs] Fig. 14 Reverse recovery charge Q RM of the body diode vs. di F /dt I S = -25 C 25 C 125 C 15 C Z thjh [K/W] V SD [V] Fig.15 Source current I S vs. source drain voltage V SD (body diode) t p [s] Fig. 16 Typ. thermal impedance junction to heatsink Z thjh with heat trafer paste (IXYS test setup) g 217 IXYS ll rights reserved 7-7