3~ Rectifier Bridge, half-controlled (high-side) + free wheeling Diode 10/11 19/20 21/22. Features / Advantages: Applications: Package: E2-Pack

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1 MCM2UJ8ED hyristor Module 3~ ectifier M 8 2 D FSM 5 3~ ectifier Bridge, half-controlled (high-side) + free wheeling Diode Part number MCM2UJ8ED Backside: isolated / /2 2/3 4/5 6/7 2/22 Pin & 4 n.c. 8/9 Features / dvantages: pplications: Package: hyristor/standard ectifier for line frequency Planar passivated chips Long-term stability Low forward voltage drop Leads suitable for PC board soldering Copper base plate with Direct Copper Bonded l2o3-ceramic mproved temperature and power cycling Diode for main rectification For single and three phase bridge configurations Supplies for DC power equipment nput rectifiers for PM inverter Battery DC power supplies Field supply for DC motors solation oltage: 36 ~ ndustry standard outline ohs compliant Soldering pins for PCB mounting Height: 7 mm Base plate: Copper internally DCB isolated dvanced power cycling Phase Change Material available erms and Conditions of Usage he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures b

2 MCM2UJ8ED ectifier Symbol SM/DSM M/DM /D Definition Conditions C J 25 C atings typ. max. 9 forward voltage drop 4 25 C.33 D C 8 C 25 C J 25 C J threshold voltage J 5 C.83 for power loss calculation only r slope resistance 3.6 mω thermal resistance junction to case.65 K/ thjc P tot total power dissipation 25 C 9 P GM P G J J 25 C SM max. forward surge current t ms; (5 Hz), sine J 45 C t 8,3 ms; (6 Hz), sine C J junction capacitance 4 f MHz 25 C 8 max. gate power dissipation t P 3 µs C 5 C average gate power dissipation t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine J C min t 3 µs 5 P J 5 C ²t value for fusing t ms; (5 Hz), sine 45 C (di/dt) cr bridge output current critical rate of rise of current rectangular d ⅓ t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine J 5 C 5 C J J.5 Unit µ m k²s k²s J pf J 5 C; f 5 Hz t P 2 µs; di G /dt.45 /µs; G.45; ⅔ repetitive, 2 (dv/dt) critical rate of rise of voltage ⅔ DM J 5 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink. K/ GK ; method (linear voltage rise) G gate trigger voltage 6 25 C D DM J J -4 C ²s ²s /µs /µs /µs.4 G gate trigger current D 6 J 25 C 7 m J -4 C.6 5 m GD gate non-trigger voltage ⅔ J C.2 D DM 5 GD gate non-trigger current 5 m L latching current t p µs J 25 C 5 m G.45; di G /dt.45 /µs H holding current D 6 GK J 25 C m t gd gate controlled delay time ½ J 25 C 2 µs D DM G.45; di G /dt.45/µs non-repet., t q turn-off time ; 4 ; ⅔ DM J 25 C 5 µs di/dt /µs dv/dt 2 /µs t p 2 µs b

3 MCM2UJ8ED Package atings Symbol Definition Conditions min. typ. max. Unit MS MS current per terminal J virtual junction temperature -4 5 C op operation temperature C eight M D dspp/pp dspb/pb stg storage temperature C SOL mounting torque 3 creepage distance on surface striking distance through air isolation voltage t second t minute terminal to terminal terminal to backside 5/6 Hz, MS; SOL m g Nm mm mm Logo 2D Data Matrix XXXXXXXXXX yywwx UL Part number Date Code Location Part description M C M 2 UJ 8 ED Module hyristor (SC) hyristor (up to 8) Current ating [] 3~ ectifier Bridge, half-controlled (high-side) + free wheeling Diode everse oltage [] Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCM2UJ8ED MCM2UJ8ED Box Equivalent Circuits for Simulation * on die level 5 C hyristor J max threshold voltage.83 max slope resistance *.5 mω 27724b

4 MCM2UJ8ED Outlines Ø Dimensions w/o tolerances acc. DN SO m 7 8 2/3 4/5 6/ Pin & 4 n.c. / 9/2 2/22 8/ b

5 MCM2UJ8ED hyristor Hz, 8% M 4 [] J 25 C [] J 25 C 5 C Fig. Forward characteristics 4 SM 3 [] 2 J 4 C.. t [s] J 45 C Fig. 2 Surge overload current SM : crest value, t: duration 2 t 3 [ 2 s] 2 J 45 C t [ms] J 4 C Fig. 3 2 t versus time (- s) G [] : GD, J 4 C 2: G, J 25 C 3: G, J -4 C : P G.5 5: P GM 5 6: P GM. G [m] Fig. 4 Gate voltage & gate current t gd.. [µs]. J 25 C lim. typ G [] Fig. 5 Gate controlled delay time t gd 8 6 M [] 4 2 dc case [ C] Fig. 6 Max. forward current at case temperature P tot 8 6 [] 4 2 dc () [] thh amb [ C] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature Z thjc.4 [K/].3.2. i thi (K/) t i (s) t [ms] Fig. 8 ransient thermal impedance junction to case 27724b