IGBT Module H Bridge MIEB 101H1200EH. = 1200 V = 183 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIEB101H1200EH
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1 MIEB 11HEH IGBT Module H Bridge S 25 = = 183 (sat) = 1.8 Part name (Marking on product) MIEB11HEH 13, 21 1 T1 D1 9 T2 D E T3 D3 11 T D 1, 2 Features: SPT + IGBT technology low saturation voltage low switching losses square RBSO, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled SONIC free wheeling diode - fast and soft reverse recovery - low operation forward voltage solderable pi for PCB mounting package with copper base plate pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E3-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting 2116a 211 IXYS ll rights reserved 1-8
2 MIEB 11HEH Ouput Inverter T1 - T Ratings Symbol Definitio Conditio min. typ. max. Unit S collector emitter voltage = 25 C S M max. DC gate voltage max. traient collector gate voltage continuous traient 25 collector current T C = 25 C 8 T C = 8 C P tot total power dissipation T C = 25 C 63 W (sat) collector emitter saturation voltage (on chip level) = 1 ; = = 25 C (th) gate emitter threshold voltage = m; = = 25 C ES collector emitter leakage current = S ; = = 25 C.9 I GES gate emitter leakage current = ±2 2 n C ies input capacitance = 25 ; = ; f = 1 MHz 73 pf Q G(on) total gate charge = 6 ; = ; = 1 75 nc t d(on) t r t d(off) t f E on E off E rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load = 6 ; = 1 = ± ; = 1 W L S = 7 nh RBSO reverse bias safe operating area = ± ; = 1 W; K = 2 SCSO t SC short circuit safe operating area short circuit duration short circuit current = 9 ; = ±1 ; = 3.9 W; non-repetitive ±2 ± m m mj mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).2 K/W Output Inverter D1 - D Ratings Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 25 C I F25 forward current T C = 25 C I F8 T C = 8 C F t rr Q rr E rec forward voltage (on chip level) max. reverse recovery current reverse recovery time I F = 1 ; = = 25 C inductive load = 6 ; = 1 = ± ; = 1 W L S = 7 nh R thjc thermal resistance junction to case (per diode). K/W T C = 25 C unless otherwise stated µc mj 2116a 211 IXYS ll rights reserved 2-8
3 MIEB 11HEH Module Ratings Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature ISOL isolation voltage I ISOL < 1 m; 5/6 Hz t = 1 min t = 1 s CTI comparative tracking index 2 M d mounting torque (M5) 3 6 Nm R pin to chip see 1.8 mw d S d creep distance on surface strike distance through air mm mm R thch thermal resistance case to heatsink with heatsink compound.1 K/W Weight 3 g = (sat) + 2x R pin to chip T C = 25 C unless otherwise stated Curves are measured on modul level except Fig. 1 to Fig. 17 C C C ~ ~ 2116a 211 IXYS ll rights reserved 3-8
4 MIEB 11HEH Circuit Diagram 13, 21 1 T1 D1 9 T2 D2 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX YYCWx Logo Part name Date Code Prod.Index 3 1, 2 T3 D3 11 T D Part number M = Module I = IGBT E = SPT B = 2nd Generation 11 = Current Rating H = H~ Bridge = Reverse oltage [] EH = E3-Pack Outline Drawing Dimeio in mm (1 mm =.39 ) Product Marking Remark: Dimeio without tolerances acc. DIN ISO 2768-T1-m Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIEB11HEH MIEB11HEH Box a 211 IXYS ll rights reserved - 8
5 MIEB 11HEH Traistor T1 - T 3 25 = 3 25 = = 25 C [] Fig. 1 Typ. output characteristics [] Fig. 2 Typ. output characteristics = 1 = [] 5 = 25 C [] Fig. 3 Typ. trafer characteristics Q G [nc] Fig. Typ. turn-on gate charge 3 t d(on) E [mj] = 1 Ω = 6 = ± E on E rec(off) t r 1 t 75 [] 5 25 E [mj] 16 8 = 1 Ω t f E off = 6 = ± t d(off) t 3 [] 2 1 Fig. 5 Typ. turn-on energy & switching times versus collector current Fig. 6 Typ. turn-off energy & switching times versus collector current 2116a 211 IXYS ll rights reserved 5-8
6 MIEB 11HEH Traistor T1 - T 2 = 1 = 6 = ± t d (on) E off t d(off) 1 8 E 1 [mj] 5 E on t r 1 t [] 5 E 6 [mj] = 1 = 6 = ± t 6 [] E rec(off) 2 t f [Ω] Fig. 7 Typ. turn-on energy and switching times versus gate resistor [Ω] Fig. 8 Typ. turn-off energy and switching times versus gate resistor 2116a 211 IXYS ll rights reserved 6-8
7 MIEB 11HEH Diode D1 - D = 25 C 25 = 33 Ω 5 I F I F = 1 r = 6 33 Ω 22 Ω 22 Ω 1 Ω 1 Ω 3.3 Ω t rr t rr 3 [] F [] Fig. 9 Typ. forward characteristics /dt [/µs] Fig. 1 Typ. reverse recovery characteristics R g = 1 Ω r = Diode Q rr Q rr 2 [µc].3 Z thjc [K/W].2 IGBT I F Fig. 11 Typ. reverse recovery characteristics t p [s] Fig. Typ. traient thermal impedance IGBT FRD R i τ i R i τ i Fig. 13 Thermal coefficients 2116a 211 IXYS ll rights reserved 7-8
8 MIEB 11HEH Diode D1 - D 2 2 R = R = 6 2 Q rr [µc] /dt [/µs] Fig. 1 Typ. reverse recov.charge Q rr vs. di/dt /dt [/µs] Fig. Typ. peak reverse current I RM vs. di/dt R = R = 6 2 t rr [] E rec [mj] /dt [/µs] Fig. 16 Typ. recovery time t rr versus di/dt /dt [/µs] Fig. 17 Typ. recovery energy E rec versus di/dt 2116a 211 IXYS ll rights reserved 8-8
9 Mouser Electronics uthorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIEB11HEH
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DIMDDM17 DIMDDM17 Dual Switch IGBT Module Replaces September 1, version DS54492.3 DS54493. March 2 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
More informationV23990-P589-A41-PM target datasheet. Maximum Ratings. Types. Tj=25 C, unless otherwise specified. Input Rectifier Diode. Inverter Transistor
2399-P589-41-PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1
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HiPerFAST TM IGBT with Diode IXGH 2N6BU S = 6 V 25 = 6 A (sat) = 2. V t fi = 8 ns Symbol Test Conditions Maximum Ratings S to 5 C 6 V V CGR to 5 C; R GE = MΩ 6 V S Continuous ±2 V M Transient ± V 25 6
More informationwith Diode ISOPLUS247 TM = 600 V = 45 A = 2.7 V = 55 ns V CE(SAT) t fi(typ) (Electrically Isolated Backside) Preliminary data sheet
HiPerFAST TM IGBT IXGR 3N6CD S = 6 V with Diode 5 = 5 A ISOPLUS7 TM (SAT) =.7 V t fi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings S to 5 C
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FED = 6 M I = x 96 A FA trr = 5 ns Fast ecovery Epitaxial Diode Low Loss and Soft ecovery Parallel legs Part number DSEIx-6A Backside: isolated Features / Advantages: Applications: Package: SOT-7B (minibloc)
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Standard Module 3~ M = 6 I = 45 A DA FSM = 3 I A 3~ Bridge Part number - ~ ~ ~ + Features / Advantages: Applications: Package: FO-F-B Package with DCB ceramic educed weight Improved temperature and power
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Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
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More informationData Sheet GHIS040A060S A2
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More information= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
V The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior
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DSAINA Diode M I A FA F.88 High Performance Diode Low Loss and Soft ecovery Single Diode Part number DSAINA Backside: Isolated 2 4 Features / Advantages: Applications: Package: ery low f Extremely low
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IGBT Chopper Module DS6246-1 July 2018 (LN35934) FEATURES 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN
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General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
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CM6DXL-24S Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Dual IGBTMOD NX-S Series Module D AC K E AB L F R Y Z AA Z AD G H C() C(2) E2(3) E2(4) A B C J K L D
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General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More information= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
V APT3GP1BDQ APT3GP1BDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology
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