IGBT XPT Module H Bridge
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- Madeleine Anthony
- 5 years ago
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1 IGBT XPT Module H Bridge Preliminary data CES = = 85 CE(sat) = 1.8 Part name (Marking on product) MIX 61H12ED 13 1 T1 D1 9 T5 D E T2 D2 11 T6 D Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 µsec. - very low gate charge - square 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E2-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting 21159a 211 IXYS ll rights reserved 1-6
2 Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 25 C 12 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 25 collector current T C = 25 C 8 T C = 8 C ±2 ± P tot total power dissipation T C = 25 C 29 W CE(sat) collector emitter saturation voltage = 55 ; GE = 15 = 25 C GE(th) gate emitter threshold voltage = 2 m; GE = CE = 25 C ES collector emitter leakage current CE = CES ; GE = = 25 C.2.5 m m I GES gate emitter leakage current GE = ±2 5 n Q G(on) total gate charge CE = 6 ; GE = 15 ; = nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = 6 ; = 5 GE = ±15 ; R G = 15 W RBSO reverse bias safe operating area GE = ±15 ; R G = 15 W; CEK = SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current CE = 9 ; GE = ±15 ; R G = 15 W; non-repetitive 2 mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).43 K/W Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 25 C 12 I F25 I F8 forward current T C = 25 C T C = 8 C F forward voltage I F = 6 ; GE = = 25 C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = 6 di F /dt = -12 /µs I F = 6 ; GE = µc mj R thjc thermal resistance junction to case (per diode).6 K/W T C = 25 C unless otherwise stated 21159a 211 IXYS ll rights reserved 2-6
3 Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature C C C ISOL isolation voltage I ISOL < 1 m; 5/6 Hz 3 ~ CTI comparative tracking index - M d mounting torque (M5) 3 6 Nm d S d creep distance on surface strike distance through air 6 6 mm mm R pin-chip resistance pin to chip 5 mw R thch thermal resistance case to heatsink with heatsink compound.2 K/W Weight 18 g Equivalent Circuits for Simulation I Symbol Definitio Conditio min. typ. max. Unit R R IGBT T1 - T6 = 15 C free wheeling diode D1 - D6 = 15 C 1.22 R T C = 25 C unless otherwise stated mw mw 21159a 211 IXYS ll rights reserved 3-6
4 Circuit Diagram 13 1 T1 D1 9 T5 D T2 D2 11 T6 D Outline Drawing Dimeio in mm (1 mm =.394 ) Product Marking XXXXXXXXXX yywwx Logo UL Part name Date Code 2D Data Matrix: FOSS-ID 6 digits Batch # 6 digits Location Part number M = Module I = IGBT X = XPT = standard 61 = Current Rating [] H = H~ Bridge 12 = Reverse oltage [] ED = E2-Pack Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX61H12ED MIX61H12ED Box a 211 IXYS ll rights reserved 4-6
5 Inverter T1 - T6 8 GE = 15 8 GE = = 25 C 6 [] 4 [] [] CE Fig. 1 Typ. output characteristics CE [] Fig. 2 Typ. output characteristics = 5 CE = 6 [] 6 4 GE [] = 25 C GE [] Fig. 3 Typ. tranfer characteristics Q G [nc] Fig. 4 Typ. turn-on gate charge 1 8 R G = 15 Ω CE = 6 GE = ±15 E on E off E off 6 E [mj] 4 2 E 5. [mj] 4.5 E on = 5 CE = 6 GE = ± [] Fig. 5 Typ. switching energy vs. collector current R G [Ω W] Fig. 6 Typ. switching energy vs. gate resistance 21159a 211 IXYS ll rights reserved 5-6
6 Inverter D1 - D R = 6 12 [] = 25 C E rec [mj] F [] Fig. 7 Typ. Forward current versus F di F /dt [/µs] Fig. 8 Typ. recovery energy E rec versu versus di/dt IGBT FRD 1 R i t i R i t i Diode R [Ω] Z thjc.1 [K/W] IGBT T C [ C] Fig. 9 Typ. NTC resistance versus temperature t p [s] Fig. 1 9 Typ. traient thermal impedance 21159a 211 IXYS ll rights reserved 6-6
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2399-P589-41-PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1
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General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
12V 1A IGB Module MG121S-BN2MM RoHS Features High short circuit capability, self limiting short circuit current IGB 3 CHIP(rench+Field Stop technology) (sat) with positive temperature coefficient Fast
Replaces June 2002, version DS DS November 2002
DIMPHM33 DIMPHM33 Half Bridge IGBT Module Replaces June 2, version DS54646.1 DS54646.2 November 2 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L
AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC
AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 4 A VS-GA4TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol
AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very
MIDA-HB12FA-600N IGBT module datasheet
Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC
Ultra Fast NPT - IGBT
APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers
Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
6V 75A IGB Module MG675S-BNMM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*
G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies,
Standard Rectifier Module
Standard Module 3~ M = 6 I = 45 A DA FSM = 3 I A 3~ Bridge Part number - ~ ~ ~ + Features / Advantages: Applications: Package: FO-F-B Package with DCB ceramic educed weight Improved temperature and power
Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
17V 1A IGB Module MG171S-BN4MM RoHS Features IGB 3 CHIP(17V rench+field Stop technology) Low turn-off losses, short tail current (sat) with positive temperature coefficient DIODE CHIP(17V EMCON 3 technology)
Full Bridge IGBT MTP (Warp Speed IGBT), 50 A
Full Bridge IGBT MTP (Warp Speed IGBT), 50 A MTP PRIMARY CHARACTERISTICS V CES 600 V DC 69 A V CE(on) 2.22 V Speed 8 khz to 30 khz Package MTP Circuit configuration Full bridge FEATURES Gen 4 warp speed
Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.
600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC
Rectifier with Chopper
STARPOWER SEMICONDUCTOR TM Rectifier with Chopper RD100PBH160C5S Preliminary Molding Type Module 1600V/100A General Description STARPOWER Rectifier Diode Power Module provides ultra low conduction loss.they
RGTV00TS65D 650V 50A Field Stop Trench IGBT
RGTVTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).5V P D 276W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High Speed
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation
General Description This IGBT is produced using advanced MagnaChip s Field Stop Trench IGBT 2 nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also