S R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters

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1 CM6DXL-24S Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) Dual IGBTMOD NX-S Series Module D AC K E AB L F R Y Z AA Z AD G H C() C(2) E2(3) E2(4) A B C J K L D E F AT AU AU AV AU DETAIL "B" Es G TH2 (62) (6) (57) Tr Di Th NTC Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D E 4.33±.2.±.5 F G H J K L M N P Q R S T U V W M6 Metric M6 X Dia W(6 PLACES) TH Cs (56) (52) X(4 PLACES) V U T Es2 G2 Cs2 (47) (46) (42) Tr2 Di2 32 DETAIL "A" M S R Q P N C AF AC AG AE EC2 (33) EC2 (32) AP AN AH Dimensions Inches Millimeters Y Z AA AB AC.5 3. AD.9 3. AE AF.67+.4/ /-.5 AG AH AJ.5.2 AK.2.65 AL AN AP.59.5 AQ.8 Dia. 2. Dia. AR.9 Dia. 2.5 Dia. AS.6 Dia. 4.3 Dia. AT AU AV AL AK AJ DETAIL "A" AS AR DETAIL "B" AQ Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM6DXL-24S is a 2V (V CES ), 6 Ampere Dual IGBTMOD Power Module. Type Current Rating V CES Amperes Volts (x 5) CM 6 24 / Rev.

2 CM6DXL-24S Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol CM6DX-24S Units Maximum Junction Temperature T j(max) +75 C Operating Power Device Junction Temperature T j(op) -4 to 5 C Storage Temperature T stg -4 to 25 C Mounting Torque, M5 Mounting Screws 3 in-lb Mounting Torque, M6 Main Terminal Screws 4 in-lb Module Weight (Typical) 69 Grams Isolation Voltage (Terminals to Baseplate, f = 6Hz, AC minute) V ISO 25 V rms Inverter Sector Collector-Emitter Voltage (V GE = V) V CES 2 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (DC, T C = 9 C) *,*5 I C 6 Amperes Collector Current (Pulse) *4 I CRM 2 Amperes Total Power Dissipation (T C = 25 C) *,*5 P tot 45 Watts Emitter Current, Free Wheeling Diode Forward Current (T C = 25 C) *,*5 I E *3 6 Amperes Emitter Current, Free Wheeling Diode Forward Current (Pulse) *4 I ERM *3 2 Amperes * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *5 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. 2 / Rev.

3 CM6DXL-24S Electrical and Mechanical Characteristics, unless otherwise specified Inverter Sector Collector Cutoff Current I CES V CE = V CES, V GE = V ma Gate Leakage Current I GES ±V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 6mA, V CE = V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 6A, V GE = 5V, Volts (Chip) I C = 6A, V GE = 5V, T j = 25 C.9 Volts I C = 6A, V GE = 5V,.95 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 6A, V GE = 5V, * Volts (Terminal) I C = 6A, V GE = 5V, T j = 25 C *6 2.5 Volts I C = 6A, V GE = 5V, *6 2. Volts Input Capacitance C ies 6 nf Output Capacitance C oes V GE = V, V CE = V 2 nf Reverse Transfer Capacitance C res. nf Total Gate Charge Q G, I C = 6A, V GE = 5V 4 nc Inductive Turn-on Delay Time t d(on) 8 ns Load Turn-on Rise Time t r, I C = 6A, *7 2 ns Switch Turn-off Delay Time t d(off), 6 ns Time Turn-off Fall Time t f R G =.3Ω,, 3 ns Reverse Recovery Time t rr *3 I E = 6A 3 ns Reverse Recovery Charge Q rr *3 32 µc Turn-on Switching Loss per Pulse E on, I C (I E ) = 6A, *7 72 mj Turn-off Switching Loss per Pulse E off, R G =.3Ω, 75 mj Reverse Recovery Loss per Pulse E rec *3, 4 mj Emitter-Collector Voltage V EC *3 I E = 6A, V GE = V, Volts (Chip) I E = 6A, V GE = V, T j = 25 C.7 Volts I E = 6A, V GE = V,.7 Volts Emitter-Collector Voltage V EC *3 I E = 6A, V GE = V, * Volts (Terminal) I E = 6A, V GE = V, T j = 25 C *6.85 Volts Thermal and Mechanical Characteristics, unless otherwise specified I E = 6A, V GE = V, *6.85 Volts Thermal Resistance, Junction to Case * R th(j-c) Q Per IGBT.33 K/W Thermal Resistance, Junction to Case * R th(j-c) D Per FWDi.63 K/W Internal Gate Resistance r g Per Switch 3.3 Ω * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. *7 Recommended maximum collector supply voltage V CC is 8V dc. / Rev. 3

4 CM6DXL-24S NTC Thermistor Sector, unless otherwise specified Zero Power Resistance R T C = 25 C kω Deviation of Resistance R/R T C = C, R = 493Ω % B Constant B (25/5) Approximate by Equation * K Power Dissipation P 25 T C = 25 C mw Module, unless otherwise specified Lead Resistance (Main Terminals-Chip) R lead T C = 25 C (Per Switch).8 mω Contact Thermal Resistance * R th(c-f) Thermal Grease Applied.7 K/W (Case to Heatsink) (Per Module) *2 * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *2 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)]. *9 B (25/5) = In( R 25 )/( ) R25 ; Resistance at Absolute Temperature T 25 [K], R 5 ; resistance at Absolute Temperature T 5 [K], R 5 T 25 T 5 T 25 = 25 [ C] = [K], T 5 = 5 [ C] = [K] 4 / Rev.

5 CM6DXL-24S COLLECTOR CURRENT, I C, (PERES) OUTPUT CHARACTERISTICS V GE = 2V VOLTAGE, V CE, (VOLTS) 2 9 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS V GE = 5V T j = 25 C COLLECTOR-CURRENT, I C, (PERES) SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS I C = 2A I C = 6A I C = 24A GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER CURRENT, I E, (PERES) 4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS V GE = 5V T j = 25 C EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) CAPACITANCE VS. V CE V GE = V C ies C oes - C res R G =.3Ω - VOLTAGE, V CE, (VOLTS) COLLECTOR CURRENT, I C, (PERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS t d(off) t d(on) t f t r SWITCHING TIME VS. GATE RESISTANCE REVERSE RECOVERY CHARACTERISTICS GATE CHARGE VS. V GE (INVERTER PART) SWITCHING TIME, (ns) - t d(off) GATE RESISTANCE, R G, (Ω) td(on) t f t r I C = 6A REVERSE RECOVERY, I rr (A), t rr (ns) R G =.3Ω I rr t rr EMITTER CURRENT, I E, (PERES) GATE-EMITTER VOLTAGE, V GE, (VOLTS) I C = 6A GATE CHARGE, Q G, (nc) / Rev. 5

6 CM6DXL-24S SWITCHING LOSS VS. COLLECTOR CURRENT SWITCHING LOSS VS. GATE RESISTANCE REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT SWITCHING LOSS, E on, E off, (mj/pulse) R G =.3Ω L s = 5nH E on SWITCHING LOSS, E on, E off, (mj/pulse) I C = 6A L s = 5nH E on REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) R G =.3Ω L s = 5nH E rr E off COLLECTOR CURRENT, I C, (PERES) - GATE RESISTANCE, R G, (Ω) E off EMITTER CURRENT, I E, (PERES) REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE I C = 6A L s = 5nH E rr - GATE RESISTANCE, R G, (Ω) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.33 C/W (IGBT) R th(j-c) =.63 C/W (FWDi) TIME, (s) / Rev.