V23990-P589-A41-PM target datasheet. Maximum Ratings. Types. Tj=25 C, unless otherwise specified. Input Rectifier Diode. Inverter Transistor
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1 2399-P PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1 housing Motor Drives Power Generation Target pplicatio Schematic 2399-P PM Types Maximum Ratings, unless otherwise specified Parameter Symbol Condition alue Unit Input Rectifier Diode Repetitive peak reverse voltage RRM 16 Forward current per diode I F DC current 33 I FSM Surge forward current t p =1ms T j = I 2 t-value I 2 t 31 2 s Power dissipation per Diode 38 Maximum Junction Temperature T j max 15 Inverter Traistor Collector-emitter break down voltage CE DC collector current I C 27 Repetitive peak collector current I Cpulse t p limited by T j max 75 Power dissipation per IGBT 72 Gate-emitter peak voltage GE ±2 Short circuit ratings t SC T j 15 1 μs CC GE =15 8 Maximum Junction Temperature T j max 175 copyright incotech 1 Revision: 1
2 2399-P PM Maximum Ratings, unless otherwise specified Parameter Symbol Condition alue Unit Inverter Diode Peak Repetitive Reverse oltage RRM T j = DC forward current I F 27 Repetitive peak forward current I FRM t p limited by T j max 5 Power dissipation per Diode 51 Maximum Junction Temperature T j max 175 BRC Traistor Collector-emitter break down voltage CE DC collector current I C 2 Repetitive peak collector current I Cpuls t p =1ms 45 Power dissipation per IGBT 64 Gate-emitter peak voltage GE ±2 Short circuit ratings t SC T j 15 1 μs CC GE =15 8 Maximum Junction Temperature T j max 175 BRC Diode Peak Repetitive Reverse oltage RRM T j = DC forward current I F 16 Repetitive peak forward current I FRM t p =1ms 2 Power dissipation per Diode 39 Maximum Junction Temperature T j max 175 Thermal properties Storage temperature T stg Operation temperature under switching condition T op -4 +Tjmax- Iulation properties Iulation voltage is t=1min 4 DC Creepage distance min 12.7 mm Clearance min 12.7 mm copyright incotech 2 Revision: 1
3 2399-P PM Characteristic alues Parameter Symbol Conditio alue Unit GE [] or GS [] r [] or CE [] or DS [] I C [] or I F [] or I D [] T j Min Typ Max Input Rectifier Diode Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) F to r t Tj=1 Tj=1 Tj= Reverse current I r thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk n.. Ω m K/ Traistor Inverter Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode Gate-emitter leakage current GE(th) CE(sat) I CES I GES CE=GE m n Integrated Gate resistor R gint none Ω Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off ± ms Input capacitance C ies 1.43 Output capacitance C oss f=1mhz.115 nf Reverse trafer capacitance C rss Gate charge Q Gate ± thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk n...85 nc K/ K/ Diode Inverter Diode forward voltage F Reverse leakage current Peak reverse recovery current I R I RRM μ Reverse recovery time Reverse recovered charge t rr Q rr ± μc Peak rate of fall of recovery current di(rec)max /dt 48 /μs Reverse recovered energy Erec 1.97 ms 1.85 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk copyright incotech 3 Revision: 1
4 2399-P PM Characteristic alues Parameter Symbol Conditio alue Unit GE [] or GS [] r [] or CE [] or DS [] I C [] or I F [] or I D [] T j Min Typ Max Traistor BRC Gate emitter threshold voltage Collector-emitter saturation voltage CE(sat) 3 Collector-emitter cut-off Gate-emitter leakage current GE(th) I CES I GES CE=GE m n Integrated Gate resistor R gint Ω Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off ± ms Input capacitance C ies.9 Output capacitance C oss f=1mhz.8 pf Reverse trafer capacitance C rss Gate charge Q Gate ± thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk.55 nc K/ Diode BRC Diode forward voltage Reverse leakage current Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current Reverse recovery energy F I r I RRM t rr Q rr di(rec)max /dt E rec 2.43 thickness 5μm Thermal resistance chip to case per chip R thjc λ=.61/mk μ μc /μs ms K/ Thermistor Rated resistance R Tj=1.75 kω Operating current I.3 m Power dissipation P 2 m B-value B (/5) Tol. ±3% 395 K copyright incotech 4 Revision: 1
5 Package Outline and Pinout 2399-P PM Outline Pinout copyright incotech 5 Revision: 1
6 2399-P PM PRODUCT STTUS DEFINITIONS Datasheet Status Target Preliminary Product Status Formative or In Design First Production Definition This datasheet contai the design specificatio for product development. Specificatio may change in any manner without notice. The data contained is exclusively intended for technically trained staff. This datasheet contai preliminary data, and supplementary data may be published at a later date. incotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Final Full Production This datasheet contai final specificatio. incotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. DISCLIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact incotech.incotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. incotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any licee under its patent rights, nor the rights of others. LIFE SUPPORT POLICY incotech products are not authorised for use as critical components in life support devices or systems without the express written approval of incotech. s used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with itructio for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright incotech 6 Revision: 1
10-PZ126PA080ME-M909F18Y. Maximum Ratings
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Symbol Parameter/Test Conditions Values Unit T C = T C =95 450
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Symbol Parameter/Test Conditions Values. T C =25, T Jmax = T C =95, T Jmax =
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Characteristic Value Units
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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Characteristic Value Units
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Characteristic Value Units
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Obsolete Product(s) - Obsolete Product(s)
40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency
5SND 0500N HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 433-2-23 5SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.
7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A
Molding Type Module IGBT, Chopper in 1 Package, 12 V and 3 A VS-GB3NH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK
Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
6V 3A Module MG63D-BN4MM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
Data Sheet GHIS030A120S-A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50
IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA
MWI 15127 IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 30 CES = 1200 CE(sat) typ. = 2.0 Part name (Marking on product) MWI15127 13 1 5 9 2 10 1 15 14 E72873 Pin confi guration see
T C = 25 C 400 T C = 80 C 300 A
APTGT3A17D3G Phase leg Trench + Field Stop IGBT3 Power Module CES = 17 I C = 3A @ Tc = 8 C 4 Q1 3 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
GCMS004A120S7B1. Preliminary Datasheet. 1200V 4.2 m SiC MOSFETs Half Bridge Module. Features. Applications. Benefits
1200V 4.2 m SiC MOSFETs Half Bridge Module Features Ultra Low Loss with SiC MOSFETs Zero Reverse Recovery Current with SiC SBDs Zero Turn off Tail Current High Frequency Operation Positive Temperature
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General
V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
DIM1800ESS12-A000. Single Switch IGBT Module DIM1800ESS12-A000 FEATURES KEY PARAMETERS V CES
Single Switch IGBT Module Replaces DS5857-2 DS5857-3 August 2014 (LN31868) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Cu Base with Al 2 O 3 Substrates Lead Free cotruction
STGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A
EMIPAK-B PressFit Power Module -Levels Half-Bridge Inverter Stage, 5 A VS-ETF5Y65U EMIPAK-B (package example) PRODUCT SUMMARY Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = A.7 V Q - Q IGBT STAGE
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC
AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High
EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 75 A VS-ETF75Y6U EMIPAK B (package example) PRIMARY CHARACTERISTICS Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.7 V I C
Half Bridge IGBT Power Module, 600 V, 100 A
Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge
onlinecomponents.com
FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
Half Bridge IGBT MTP (Warp Speed IGBT), 114 A
Half Bridge IGBT MTP (Warp Speed IGBT), 4 A MTP PRIMARY CHARACTERISTICS V CES 6 V V CE(on) typical at V GE = 5 V 2.3 V I C at T C = 25 C 4 A Speed 3 khz to khz Package MTP Circuit configuration Half bridge
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
Features G D. TO-220 FQP Series
FQP7N60 FQP7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS
Features G D. TO-220 FQP Series
100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
Features. I-PAK FQU Series
250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
Features. TO-220F FQPF Series
250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
QFET TM FQL40N50. Features. TO-264 FQL Series
500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
STGW15H120DF2, STGWA15H120DF2
STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
Features. TO-3P FQA Series
FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,