IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07

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1 HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - E off optimized for =3A G C E Qualified according to JEDEC 2 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : PG-TO Type V CE E off T j Marking Package IGB03N120H2 1200V 3A 0.15mJ 150 C G03H1202 PG-TO Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 1200 V Triangular collector current T C = 25 C, f = 140kHz T C = 100 C, f = 140kHz Pulsed collector current, t p limited by T jmax puls 9.9 Turn off safe operating area V CE 1200V, T j 150 C Gate-emitter voltage V GE ±20 V Power dissipation T C = 25 C P tot 62.5 W Operating junction and storage temperature T j, T stg Soldering temperature (reflow soldering, MSL1) A C 2 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.4 Oct. 07

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case R thjc 2.0 Thermal resistance, R thja 40 junction ambient 1) K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V (BR)CES V GE =0V, =300µA Collector-emitter saturation voltage V CE(sat) V GE = 15V, =3A T j =25 C T j =150 C V GE = 10V, =3A, T j =25 C Gate-emitter threshold voltage V GE(th) =90µA,V CE =V GE Zero gate voltage collector current ES V CE =1200V,V GE =0V T j =25 C T j =150 C Gate-emitter leakage current I GES V CE =0V,V GE =20V na Transconductance g fs V CE =20V, =3A S Dynamic Characteristic Input capacitance C iss V CE =25V, Output capacitance C oss V GE =0V, Reverse transfer capacitance f=1mhz C rss Gate charge Q Gate V CC =960V, =3A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Unit V µa pf nc L E nh 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. Power Semiconductors 2 Rev. 2.4 Oct. 07

3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =25 C, Rise time t r V CC =800V, =3A, Turn-off delay time t d(off) V GE =15V/0V, Fall time t f R G =82Ω, L 2) σ =180nH, Turn-on energy E on C 2) σ =40pF Turn-off energy E off Energy losses include Total switching energy E ts tail and diode 4) reverse recovery. Unit ns mj Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =150 C Rise time t r V CC =800V, Turn-off delay time t d(off) =3A, Fall time t f V GE =15V/0V, Turn-on energy E R G =82Ω, on L 2) σ =180nH, Turn-off energy E off C 2) σ =40pF Total switching energy E ts Energy losses include tail and diode 3) reverse recovery. Unit ns mj Switching Energy ZVT, Inductive Load Parameter Symbol Conditions IGBT Characteristic Turn-off energy E off V CC =800V, =3A, V GE =15V/0V, R G =82Ω, C 2) r =4nF T j =25 C T j =150 C Value min. typ. max Unit mj 2) Leakage inductance L σ and stray capacity C σ due to dynamic test circuit in figure E 4) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.4 Oct. 07

4 1 I c 1 t p =1µs 1 5µs IC, COLLECTOR CURRENT 8A 6A 4A I c T C =80 C T C =110 C IC, COLLECTOR CURRENT 1A 0,1A 10µs 50µs 100µs 500µs DC 10Hz 100Hz 1kHz 10kHz 100kHz,01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 800V, V GE = +15V/0V, R G = 82Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C) 60W 1 50W 1 Ptot, POWER DISSIPATION 40W 30W 20W 10W IC, COLLECTOR CURRENT 8A 6A 4A 0W 25 C 50 C 75 C 100 C 125 C 25 C 50 C 75 C 100 C 125 C 150 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 4 Rev. 2.4 Oct. 07

5 1 1 9A 8A 8A IC, COLLECTOR CURRENT 6A 4A V GE =15V 12V 10V 8V 6V IC, COLLECTOR CURRENT 7A 6A 5A 4A 3A V GE =15V 12V 10V 8V 6V 1A 0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V V CE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25 C) V CE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (T j = 150 C) IC, COLLECTOR CURRENT 1 1 8A 6A 4A T j =+150 C T j =+25 C 3V 5V 7V 9V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 3V 2V 1V =6A =3A =1.5A 0V -50 C 0 C 50 C 100 C 150 C V GE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (V CE = 20V) T j, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.4 Oct. 07

6 1000ns 1000ns t d(off) t d(off) t, SWITCHING TIMES 100ns 10ns t f t d(on) t, SWITCHING TIMES 100ns 10ns t f t d(on) t r t r 1ns 4A 1ns 0Ω 50Ω 100Ω 150Ω, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, R G = 82Ω, dynamic test circuit in Fig.E) R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, = 3A, dynamic test circuit in Fig.E) 1000ns 5V t, SWITCHING TIMES 100ns 10ns t f t d(off) t d(on) t r 1ns 25 C 50 C 75 C 100 C 125 C 150 C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 4V 3V 2V 1V max. typ. min. 0V -50 C 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V, = 3A, R G = 82Ω, dynamic test circuit in Fig.E) T j, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature ( = 0.09mA) Power Semiconductors 6 Rev. 2.4 Oct. 07

7 1.0mJ 1 ) E on and E ts include losses due to diode recovery. E ts 1 0.7mJ 1 ) E on and E ts include losses due to diode recovery. E ts 1 E, SWITCHING ENERGY LOSSES 0.5mJ E off E on 1 E, SWITCHING ENERGY LOSSES 0.6mJ 0.5mJ 0.4mJ 0.3mJ 0.2mJ E off E on 1 0.0mJ 4A 0Ω 50Ω 100Ω 150Ω 200Ω 250Ω, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, R G = 82Ω, dynamic test circuit in Fig.E ) R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, = 3A, dynamic test circuit in Fig.E ) E, SWITCHING ENERGY LOSSES 0.5mJ 0.4mJ 0.3mJ 0.2mJ 0.1mJ 1 ) E on and E ts include losses due to diode recovery. E ts 1 E off E on 1 25 C 80 C 125 C 150 C Eoff, TURN OFF SWITCHING ENERGY LOSS 0.16mJ 0.12mJ 0.08mJ 0.04mJ =1A, T J =150 C =3A, T J =150 C =1A, T J =25 C =3A, T J =25 C 0.00mJ 0V/us 1000V/us 2000V/us 3000V/us T j, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V, = 3A, R G = 82Ω, dynamic test circuit in Fig.E ) dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E) Power Semiconductors 7 Rev. 2.4 Oct. 07

8 20V 10 0 K/W D=0.5 VGE, GATE-EMITTER VOLTAGE K/W K/W R,(K/W) τ, (s) R 1 R 2 VGE, GATE-EMITTER VOLTAGE 15V 10V 5V U CE =240V U CE =960V single pulse C 1=τ 1/R 1 C 2=τ 2/R 2 1µs 10µs 100µs 1ms 10ms 100ms 0V 0nC 10nC 20nC 30nC Q GE, GATE CHARGE Figure 17. Typical gate charge ( = 3A) Q GE, GATE CHARGE Figure 17. Typical gate charge ( = 3A) 1nF 1000V 3A C, CAPACITANCE 100pF 10pF 0V 10V 20V 30V C iss C oss C rss VCE, COLLECTOR-EMITTER VOLTAGE 800V 600V 400V 200V 0V A ICE COLLECTOR CURRENT V CE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz) t p, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (V GE =15/0V, R G =82Ω, T j = 150 C, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.4 Oct. 07

9 800V 3A VGE, GATE-EMITTER VOLTAGE 600V 400V 200V 1A ICE COLLECTOR CURRENT 0V t p, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (V GE =15/0V, R G =82Ω, T j = 150 C, Dynamic test circuit in Figure E) Power Semiconductors 9 Rev. 2.4 Oct. 07

10 PG-TO Power Semiconductors 10 Rev. 2.4 Oct. 07

11 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit ½ L σ öö DUT (Diode) L C σ C r V DC R G DUT (IGBT) ½ L σ Figure E. Dynamic test circuit Leakage inductance L σ = 180nH, Stray capacitor C σ = 40pF, Relief capacitor C r = 4nF (only for ZVT switching) Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.4 Oct. 07

12 Edition Published by Infineon Technologies AG München, Germany Infineon Technologies AG 11/6/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.4 Oct. 07

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