TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Transcription

1 Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior very high switching speed low V CE(sat) Positive temperature coefficient in V PGTO22031 CE(sat) Low EMI Low Gate Charge Very soft, fast recovery antiparallel EmCon HE diode Qualified according to JEDEC 1 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : G PGTO C E Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 600V 2 1.5V 175 C K20T60 PGTO V 2 1.5V 175 C K20T60 PGTO Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 600 V DC collector current, limited by T jmax I C T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 60 Turn off safe operating area (V CE 600V, T j 175 C) 60 Diode forward current, limited by T jmax T C = 25 C T C = 100 C I F Diode pulsed current, t p limited by T jmax I Fpuls 60 Gateemitter voltage V GE ±20 V Short circuit withstand time 2) V GE = 15V, V CC 400V, T j 150 C t SC 5 µs Power dissipation T C = 25 C P tot 166 W Operating junction temperature T j Storage temperature T stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. A C Power Semiconductors 1 Rev. 2.4 Sep. 07

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R thjc 0.9 K/W junction case Diode thermal resistance, R thjcd 1.5 junction case Thermal resistance, junction ambient R thja Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =0.2mA 600 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C =2 T j =25 C T j =175 C Diode forward voltage V F V GE =0V, I F =2 T j =25 C T j =175 C Gateemitter threshold voltage V GE(th) I C =290µA,V CE =V GE Zero gate voltage collector current I CES V CE =600V, V GE =0V T j =25 C T j =175 C Gateemitter leakage current I GES V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, I C =2 11 S Integrated gate resistor R Gint Ω Unit V µa Dynamic Characteristic Input capacitance C iss V CE =25V, 1100 Output capacitance C oss V GE =0V, 71 Reverse transfer capacitance f=1mhz 32 C rss Gate charge Q Gate V CC =480V, I C =2 V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case L E TO TO22031 Short circuit collector current 1) I C(SC) V GE =15V,t SC 5µs V CC = 400V, T j 150 C pf 120 nc 13 7 nh A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 2 Rev. 2.4 Sep. 07

3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. Typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, 18 Rise time t V CC =400V,I C =2, r 14 V GE =0/15V, Turnoff delay time t d(off) R 199 G =12 Ω, Fall time t f L 2) σ =131nH, 42 Turnon energy E C 2) σ =31pF on 0.31 Energy losses include Turnoff energy E off tail and diode 0.46 Total switching energy reverse recovery E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =25 C, 41 ns Diode reverse recovery charge Q rr V R =400V, I F =2, 0.31 µc Diode peak reverse recovery current I rrm di F /dt=88/µs 13.3 A Diode peak rate of fall of reverse recovery current during t b di rr /dt 711 A/µs Unit ns mj Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions Value min. Typ. max. IGBT Characteristic Turnon delay time t d(on) T j =175 C, 18 Rise time t V CC =400V,I C =2, r 18 V GE =0/15V, Turnoff delay time t d(off) R 223 G = 12 Ω Fall time t f L 1) σ =131nH, 76 Turnon energy E C 1) σ =31pF on 0.51 Energy losses include Turnoff energy E off tail and diode 0.64 Total switching energy reverse recovery E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =175 C 176 ns Diode reverse recovery charge Q rr V R =400V, I F =2, 1.46 µc Diode peak reverse recovery current I rrm di F /dt=88/µs 18.9 A Diode peak rate of fall of reverse recovery current during t b di rr /dt 467 A/µs Unit ns mj 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Sep. 07

4 t p =2µs 6 10µs IC, COLLECTOR CURRENT I c I c T C =80 C T C =110 C IC, COLLECTOR CURRENT 1 1A DC 50µs 1ms 10ms 10Hz 100Hz 1kHz 10kHz 100kHz 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 175 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 12Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 175 C; V GE =15V) 160W 140W 3 Ptot, POWER DISSIPATION 120W 100W 80W 60W 40W IC, COLLECTOR CURRENT 25A 2 15A 1 20W 5A 0W 25 C 50 C 75 C 100 C 125 C 150 C 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 175 C) Power Semiconductors 4 Rev. 2.4 Sep. 07

5 5 5 IC, COLLECTOR CURRENT V GE =20V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT V GE =20V 15V 13V 11V 9V 7V 1 1 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 1V 2V 3V 4V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 175 C) IC, COLLECTOR CURRENT 35A 3 25A 2 15A 1 5A =175 C 25 C 0V 2V 4V 6V 8V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2.5V 2.0V 1.5V 1.0V 0.5V I C =4 I C =2 I C =1 0.0V 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =10V), JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.4 Sep. 07

6 t d(off) t d(off) t, SWITCHING TIMES 100ns 10ns t d(on) t f t, SWITCHING TIMES 100ns t f t d(on) t r 1ns 5A 1 15A 2 25A 3 35A 10ns t r 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, =175 C, V CE = 400V, V GE = 0/15V, R G = 12Ω, R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, I C = 2, 7V t, SWITCHING TIMES 100ns t d(on) 10ns 25 C 50 C 75 C 100 C 125 C 150 C t r t d(off) t f VGE(th), GATEEMITT TRSHOLD VOLTAGE 6V 5V 4V 3V 2V 1V min. typ. max., JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 2, R G =12Ω, 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.29mA) Power Semiconductors 6 Rev. 2.4 Sep. 07

7 E, SWITCHING ENERGY LOSSES ) E 2.4mJ on and E ts include losses E ts due to diode recovery 2.0mJ 1.6mJ 1.2mJ 0.8mJ E off 0.4mJ E on 0.0mJ 5A 1 15A 2 25A 3 35A E, SWITCHING ENERGY LOSSES 2.4mJ 2.0mJ 1.6mJ 1.2mJ 0.8mJ 0.4mJ ) E on and E ts include losses due to diode recovery E on 0.0mJ 0Ω 15Ω 30Ω 45Ω 60Ω E off E ts I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, R G = 12Ω, R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, I C = 2, E, SWITCHING ENERGY LOSSES 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ E off E on ) E on and E ts include losses due to diode recovery E ts E, SWITCHING ENERGY LOSSES 2.0m J 1.8mJ 1.6mJ 1.4mJ 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ ) E on and E ts include losses due to diode recovery E ts E on E off 0.2mJ 0.0mJ 25 C 50 C 75 C 100 C 125 C 150 C, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 2, R G = 12Ω, 0.0mJ 300V 350V 400V 450V 500V 550V V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, = 175 C, V GE = 0/15V, I C = 2, R G = 12Ω, Power Semiconductors 7 Rev. 2.4 Sep. 07

8 1nF C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 100pF C oss C rss 0V 0nC 30nC 60nC 90nC 120nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =20 A) 10pF 0V 10V 20V 30V 40V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) 12µs IC(sc), short circuit COLLECTOR CURRENT V 14V 16V 18V tsc, SHORT CIRCUIT WITHSTAND TIME 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 12V 13V 14V V GE, GATEEMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (V CE 400V, T j 150 C) V GE, GATEEMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gateemitter voltage (V CE =600V, start at =25 C, max <150 C) Power Semiconductors 8 Rev. 2.4 Sep. 07

9 ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D= single pulse R,(K/W) τ, (s) R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 ZthJC, TRANSIENT THERMAL RESISTANCE 10 0 K/W D= K/W single pulse R,(K/W) τ, (s) R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = t p / T) 10 2 K/W 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=t P /T) 1.8µC 250ns 1.6µC =175 C trr, REVERSE RECOVERY TIME 200ns 150ns 100ns 50ns =175 C =25 C Qrr, REVERSE RECOVERY CHARGE 1.4µC 1.2µC 1.0µC 0.8µC 0.6µC 0.4µC 0.2µC =25 C 0ns 60/µs 90/µs 120/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (V R =400V, I F =2, 60/µs 90/µs 120/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (V R = 400V, I F = 2, Power Semiconductors 9 Rev. 2.4 Sep. 07

10 24A =175 C 75/µs =25 C Irr, REVERSE RECOVERY CURRENT 2 16A 12A 8A 4A =25 C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 60/µs 45/µs 30/µs 15/µs =175 C 60/µs 90/µs 120/µs /µs 60/µs 90/µs 120/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (V R = 400V, I F = 2, di F /dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =400V, I F =2, 5 =25 C 2.0V I F =4 175 C IF, FORWARD CURRENT VF, FORWARD VOLTAGE 1.5V 1.0V 0.5V 2 1 0V 1V 2V 0.0V 0 C 50 C 100 C 150 C V F, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 10 Rev. 2.4 Sep. 07

11 PGTO22031 Power Semiconductors 11 Rev. 2.4 Sep. 07

12 PGTO Power Semiconductors 12 Rev. 2.4 Sep. 07

13 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Power Semiconductors 13 Rev. 2.4 Sep. 07

14 Edition Published by Infineon Technologies AG München, Germany Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.4 Sep. 07