GCMS004A120S7B1. Preliminary Datasheet. 1200V 4.2 m SiC MOSFETs Half Bridge Module. Features. Applications. Benefits

Transcription

1 1200V 4.2 m SiC MOSFETs Half Bridge Module Features Ultra Low Loss with SiC MOSFETs Zero Reverse Recovery Current with SiC SBDs Zero Turn off Tail Current High Frequency Operation Positive Temperature Coefficient on VDS(on) Cu baseplate with AlN DBC substrate Applicatio Package: 62mm x 106mm x 17mm UPS and SMPS Fast DC/DC Converter Solar and Wind Inverter Induction Heating/Welding Benefits Outstanding performance at high frequency operation Low switching losses Better EMI noise with low parasitic inductance Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of RDS_ON RoHS Compliant Absolute Maximum Ratings (T j =25 o C unless otherwise specified) Parameter Symbol Conditio Specificatio Units Drain Source Voltage V DS 1200 V Continuous Drain Current I D V GS =20V, T C = A V GS =20V, T C = A Gate Source Voltage V GS +25/-10 V Pulsed Drain Current I DS Limited by Tj_max 1600 A Maximum Power Dissipation P D T C = W T C = 100 TBD W Operating Junction Temperature T j 40 ~ 150 Storage Temperature T STG 40 ~ 125 Solder Temperature T L Max for 10 sec 260 Page 1 of 5 GPTG Proprietary Information Rev /04/2016

2 Electrical Characteristics of MOSFETs (T j =25 o C unless otherwise specified) Parameter Symbol Conditio Min Typ Max Units OFF Zero Gate Voltage Drain Current I DSS V DS = 1200V, V GS = 0V A Gate Source Leakage Current I GSS V DS = 0V, V GS = 20V ±1 A ON Gate Source Threshold Voltage V GS(TH) V DS = 10V, I D = 15mA, T j = V V DS = 10V, I D = 15mA, T j = On State Resistance R DS(ON) V GS = 20V, I D = 320A, T j = m V GS = 20V, I D = 320A, T j = m Traconductance g fs V DS = 20V, I D = 320A, T j = S DYNAMIC V DS = 20V, I D = 320A, T j = Input Capacitance C ISS V DS = 600V, V GS = 0V, f = nf Output Capacitance C OSS KHz, V AC = 25mV 2.55 nf Reverse Trafer Capacitance C RSS 77 pf Internal Gate Resistance R G(INT) f = 1 MHz, V AC = 25mV 0.2 External Gate Resistance R G(EXT) TBD Module Stray Inductance L Between terminal 2 and 3 10 nh Module Lead Resistance R mod TBD m SWITCHING Turn On Delay Time t d(on) 76 Rise Time Turn Off Delay Time t r t d(off) V DD = 600V, I D =320A R G = 2.5Ω, V GS = 5/20V Fall Time t f Inductive Load, T J =25 45 Turn On Switching Energy Loss E ON TBD mj Turn Off Switching Energy Loss E OFF TBD mj Turn On Delay Time t d(on) TBD Rise Time Turn Off Delay Time t r t d(off) V DD = 600V, I D =320A R G = 2.5Ω, V GS = 5/20V TBD TBD Fall Time t f Inductive Load, T J =150 TBD Turn On Switching Energy Loss E ON TBD mj Turn Off Switching Energy Loss E OFF TBD mj Total Gate Charge Q G V DD = 600V, I D =320A 1050 nc Gate Source Charge Q GS V GS = 5/20V 170 nc Page 2 of 5 GPTG Proprietary Information Rev /04/2016

3 Gate Drain Charge Q GD 480 nc Maximum Rated Values of SiC Freewheeling SBDs (T C =25 unless otherwise specified) Parameter Symbol Conditio Value Unit Repetitive Peak Reverse Voltage V RRM T j =25 C 1200 V Diode Continuous Forward Current I F T C =100 C, T j =150 C 320 A Surge Non-repetitive Forward Current I F,SM T C =100 C, t p =8.3 ms sine half wave Electrical Characteristics of SiC SBD (T C =25 unless otherwise specified) 1200 A Parameter Symbol Conditio Min Typ Max Unit DC Blocking Voltage V R I R =1000 ua 1200 V Forward Voltage V F I F =320A, V GE = 0V T J = T J = V Total Capacitive Charge Q C V R =1200V T J = nc Thermal Characteristics (T C =25 unless otherwise specified) Parameter Symbol Conditio Min Typ Max Unit MOSFET Thermal Resistance: Junction-To-Case Diode Thermal Resistance: Junction- To-Case R θjcm Tc = 90 C, PD = 150 W /W R θjcd Tc = 90 C, PD = 130 W /W Module Characteristics (T j =25 o C unless otherwise specified) Parameter Symbol Conditio Min Typ Max Units Mounting Torque M d 5 N m Clearance Terminal to terminal 12 mm Package Weight W t 250 g Isolation Voltage V ISOL I ISOL < 1mA, 50/60Hz, t=1 min 2500 V Page 3 of 5 GPTG Proprietary Information Rev /04/2016

4 Internal Circuit: Preliminary Package Outline (Unit: mm): Page 4 of 5 GPTG Proprietary Information Rev /04/2016

5 Revision History Date Revision Notes 03/04/ Initial release Global Power Technologies Group Prism Place Lake Forest, CA TEL (949) FAX (949) Web site: Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, RoHS Declaratio for this product can be obtained from the Product Documentation sectio of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact our office at GPTG Headquarters in Lake Forest, California to iure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicatio implanted into the human body nor in applicatio in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Global Power Technologies Group. GPTG reserves the right to make changes, correctio, modificatio, and improvements of datasheet without notice. Page 5 of 5 GPTG Proprietary Information Rev /04/2016