CAS325M12HM2 1.2kV, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode

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1 CAS325M12HM2 1.2k, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode DS E sw, 600, 300A R DS(on) 1.2 k 9.3 mj 3.6 mω Features Ultra Low Loss, Low (5 nh) Inductance Ultra-Fast Switching Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation AlSiC Baseplate and Si3N4 AMB Substrate Ease of Paralleling High Temperature Packaging, T J(max) = 175 C AS9100 / ISO9001 Certified Manufacturing System Benefits Enables Compact, Lightweight Systems High Efficiency Operation Reduced Thermal Requirements Reduced System Cost Package 65mm x 110mm x 10mm Applications High-Efficiency Converters / Inverters Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation Part Number Package Marking CAS325M12HM2 Half-Bridge Module CAS325M12HM2 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter alue Unit Test Conditions Notes DSmax Drain - Source oltage 1.2 k GSmax Gate - Source oltage, Maxium values -5/+25 T J = -55 to 150 C -5/+23 T J = -55 to 175 C Datasheet: GSop Gate - Source oltage, Recommended Operation values -5/+20 T J = -55 to 150 C -5/+18 T J = -55 to 175 C I D Continuous Drain Current 444 T C = 25 C T J = 175 C A 256 T C = 125 C, T J = 175 C Fig. 24 T Jmax Junction Temperature 175 C T C,T STG Case and Storage Temperature Range -55 to +175 C isol Case Isolation oltage 1.2 k AC, 50 Hz, 1 min P D Power Dissipation 3000 W T C = 25 C, T J = 175 C Fig. 23 Subject to change without notice. 1

2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note (BR)DSS Drain - Source Breakdown oltage 1.2 k GS(th) Gate Threshold oltage DS = GS, I D = 105 ma 2.0 DS = GS, I D = 105 ma, T J = 175 C I DSS Zero Gate oltage Drain Current μa DS = 1.2 k, GS = -5 I GSS Gate-Source Leakage Current 3.5 na GS = 20, DS = 0 R DS(on) On State Resistance C iss Input Capacitance 19.5 C oss Output Capacitance 1.54 C rss Reverse Transfer Capacitance mω nf GS = 20, I DS = 400 A GS = 18, I DS = 400 A, T J = 175 C GS = 0, DS = 1000, f = 1 MHz, AC = 25 m Fig. 3 Fig. 11, 12 E on Turn-On Switching Energy 5.6 E Off Turn-Off Switching Energy 3.7 mj DD = 600, GS = -5/+20 I D = 300 A, R G(ext) = 2Ω Note: IEC Definitions Fig. 13, 14 Q GS Gate-Source Charge 322 Q GD Gate-Drain Charge 350 Q G Total Gate Charge 1127 nc DS= 800, GS = -5/+20, I D= 350 A, Per IEC Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note SD I F = 350 A, GS = -5 Diode Forward oltage I F = 350 A, T J = 175 C, GS = -5 Q C Total Capacitive Charge 4.3 μc Includes Schottky & Body diodes Note: The reverse recovery is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET R thjcd Thermal Resistance Juction-to-Case for Diode C/W Fig. 18,19 Additional Module Data Symbol Parameter Min. Typ. Max. Unit Test Condtion W Weight 140 g Power Terminals, M4 Bolts M Mounting Torque Nm Baseplate, M6 Bolts L CE Loop Inductance 5 nh 2

3 Figure 1. Typical Output Characteristics T J = 25 C Figure 2. Typical Output Characteristics T J = 125 C Figure 3. Typical Output Characteristics T J = 150 C Figure 3. Typical Output Characteristics T J = 175 C Figure 5. On-Resistance vs. Temperature for arious Gate-Source oltage Figure 6. Antiparallel Diode Characteristic, GS = -5 3

4 Figure 7. 3 rd Quadrant Characteristic at 25 C Figure 8. 3 rd Quadrant Characteristic at 125 C Figure 9. 3 rd Quadrant Characteristic at 150 C Figure rd Quadrant Characteristic at 175 C Figure 11. Typical Capacitances vs. Drain-Source oltage (0-200 ) Figure 12. Typical Capacitances vs. Drain-Source oltage (0-1 k) 4

5 Figure 13. Inductive Switching Energy vs. Drain Current For DD = 600, R G = 2 Ω Figure 14. Inductive Switching Energy vs. Drain Current For DD = 800, R G = 2 Ω Figure 15. Inductive Switching Energy vs. Gate Resistance, I DS = 300A Figure 16. Maximum Power Dissipation (MOSFET) Derating Per Switch Position vs Case Temperature Figure 17. Continous Drain Current Derating vs Case Temperature Figure 18. MOSFET Junction to Case Thermal Impedance 5

6 Figure 19. Diode Junction to Case Thermal Impedance Package Dimensions (mm) CAS325M12HM2 Unspecified Dimensions.XX = ± 0.3 mm 6

7 Important Notes The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based moules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive DS overshoot. The module utilizes the ESQT G-D-XXX family of elevated socket connectors from Samtec, available in varying height according to the customer s preference Companion Parts: CGD15HB62LP + High Performance Three Phase Evaluation Unit Some values were obtained from the CPM B and CPW Z050B device datasheet. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection. Copyright Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc Silicon Drive Durham, NC USA Tel: Fax: CAS325M12HM2 Rev. -,

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