IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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1 Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Short circuit withstand time 10µs Designed for : Soft Switching Applications Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior easy parallel switching capability due to positive temperature coefficient in V CE(sat) Very soft, fast recovery antiparallel EmCon HE diode Low EMI Qualified according to JEDEC 1 for target applications Application specific optimisation of inverse diode Pbfree lead plating; RoHS compliant G C E PGTO2473 Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 1200V 15A 1.7V 150 C H15T120 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 1200 V DC collector current I C T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 45 Turn off safe operating area 45 V CE 1200V, T j 150 C Diode forward current I F T C = 25 C T C = 100 C Diode pulsed current, t p limited by T jmax, T c =25 C I Fpuls 36 Diode surge non repetitive current, t p limited by T jmax T C = 25 C, t p = 10ms, sine halfwave T C = 25 C, t p 2.5µs, sine halfwave T C = 100 C, t p 2.5µs, sine halfwave Gateemitter voltage V GE ±20 V Short circuit withstand time 2) V GE = 15V, V CC 1200V, T j 150 C I FSM t SC 10 µs Power dissipation, T C = 25 C P tot 113 W Operating junction temperature T j Storage temperature T stg A C 1 JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Sep 08

2 Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 Power Semiconductors 2 Rev. 2.3 Sep 08

3 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient R thjc 1.1 R thjcd 1.3 R thja 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =0.5mA 1200 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C =15A T j =25 C T j =125 C T j =150 C Diode forward voltage V F V GE =0V, I F =9A T j =25 C T j =150 C Gateemitter threshold voltage V GE(th) I C =0.6mA,V CE =V GE Zero gate voltage collector current I CES V CE =1200V, V GE =0V T j =25 C T j =150 C Gateemitter leakage current I GES V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, I C =15A 10 S Integrated gate resistor R Gint none Ω Unit V ma Power Semiconductors 3 Rev. 2.3 Sep 08

4 Dynamic Characteristic Input capacitance C iss V CE =25V, 1082 Output capacitance C oss V GE =0V, 82 Reverse transfer capacitance f=1mhz 49 C rss Gate charge Q Gate V CC =960V, I C =15A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) I C(SC) V GE =15V,t SC 10µs V CC = 600V, T j = 25 C pf 85 nc L E 13 nh 90 A Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, 50 Rise time t V CC =600V,I C =15A, r 30 V GE = 0 /15V, Turnoff delay time t d(off) R 520 G =56Ω, Fall time t f L 2) σ =180nH, 60 Turnon energy E on C 2) σ =39pF 1.3 Energy losses include Turnoff energy E off tail and diode 1.4 Total switching energy reverse recovery. 2.7 E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =25 C, 140 ns Diode reverse recovery charge Q rr V R =800V, I F =9A, 950 nc Diode peak reverse recovery current di F /dt=75/µs 13.3 A I rrm Unit ns mj 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2.3 Sep 08

5 Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =150 C, 50 Rise time t V CC =600V,I C =15A, r 35 V GE = 0 /15V, Turnoff delay time t d(off) R 600 G = 56Ω Fall time t f L 1) σ =180nH, 120 Turnon energy E C 1) σ =39pF on 2.0 Energy losses include Turnoff energy E off tail and diode 2.1 Total switching energy reverse recovery. 4.1 E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =150 C 210 ns Diode reverse recovery charge Q rr V R =800V, I F =9A, 1600 nc Diode peak reverse recovery current di F /dt=75/µs 16.5 A I rrm Unit ns mj 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 5 Rev. 2.3 Sep 08

6 4 t p =2µs 10µs IC, COLLECTOR CURRENT 3 2 T C =80 C T C =110 C I c IC, COLLECTOR CURRENT 1A 0,1A 50µs 200µs 500µs 2ms DC I c 10Hz 100Hz 1kHz 10kHz 100kHz 0,01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 56Ω) Figure 2. IGBT Safe operating area (D = 0, T C = 25 C, T j 150 C;V GE =15V) 3 100W Ptot, DISSIPATED POWER 80W 60W 40W 20W IC, COLLECTOR CURRENT 2 0W 25 C 50 C 75 C 100 C 125 C 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 6 Rev. 2.3 Sep 08

7 4 4 V GE =17V V GE =17V IC, COLLECTOR CURRENT V 13V 11V 9V 7V IC, COLLECTOR CURRENT V 13V 11V 9V 7V 0V 1V 2V 3V 4V 5V 6V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 1V 2V 3V 4V 5V 6V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 150 C) IC, COLLECTOR CURRENT 4 35A 3 25A 2 15A 5A =150 C 25 C 0V 2V 4V 6V 8V 10V 12V V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V) VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 50 C 0 C 50 C 100 C I C =3 I C =15A I C =8A I C =5A, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 7 Rev. 2.3 Sep 08

8 t d(off) 1µs t d(off) t, SWITCHING TIMES 100ns 10ns t f t d(on) t r t, SWITCHING TIMES 100ns 10ns t f t d(on) t r 1ns 2 I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, =150 C, V CE =600V, V GE =0/15V, R G =56Ω, 1ns 10Ω 35Ω 60Ω 85Ω 110Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, =150 C, V CE =600V, V GE =0/15V, I C =15A, t d(off) t, SWITCHING TIMES 100ns t f t d(on) t r VGE(th), GATEEMITT TRSHOLD VOLTAGE 7V 6V 5V 4V 3V 2V 1V max. typ. min. 10ns 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =15A, R G =56Ω, 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.6mA) Power Semiconductors 8 Rev. 2.3 Sep 08

9 ) E on and E ts include losses due to diode recovery 5 mj ) E on and E ts include losses due to diode recovery E ts E, SWITCHING ENERGY LOSSES 8,0mJ 6,0mJ 4,0mJ 2,0mJ E ts E off E, SWITCHING ENERGY LOSSES 4 mj 3 mj 2 mj 1 mj E on E off E on 0,0mJ 5A 15A 2 25A I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, =150 C, V CE =600V, V GE =0/15V, R G =56Ω, 0 mj 5Ω 30Ω 55Ω 80Ω 105Ω R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, =150 C, V CE =600V, V GE =0/15V, I C =15A, 4mJ ) E on and E ts include losses due to diode recovery 6mJ ) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 3mJ 2mJ 1mJ E ts E off E on E, SWITCHING ENERGY LOSSES 5mJ 4mJ 3mJ 2mJ 1mJ E ts E off E on 0mJ 50 C 100 C 150 C 0mJ 400V 500V 600V 700V 800V, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =15A, R G =56Ω, V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, =150 C, V GE =0/15V, I C =15A, R G =56Ω, Power Semiconductors 9 Rev. 2.3 Sep 08

10 C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 240V 960V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 50nC 100nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =15 A) 10pF 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) tsc, SHORT CIRCUIT WITHSTAND TIME 15µs 10µs 5µs IC(sc), short circuit COLLECTOR CURRENT 125A 10 75A 5 25A 0µs 12V 14V 16V V GE, GATEEMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gateemitter voltage (V CE =600V, start at =25 C) 12V 14V 16V 18V V GE, GATEEMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j 150 C) Power Semiconductors 10 Rev. 2.3 Sep 08

11 ZthJC, TRANSIENT THERMAL RESISTANCE 10 0 K/W D= K/W single pulse R,(K/W) τ, (s) R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 ZthJC, TRANSIENT THERMAL RESISTANCE 0 0 K/W 0 1 K/W D= single pulse R,(K/W) τ, (s) R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 23. Typical IGBT transient thermal resistance (D = t p / T) 0 2 K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 24. Typical Diode transient thermal impedance as a function of pulse width (D=t P /T) trr, REVERSE RECOVERY TIME 500ns 400ns 300ns 200ns 100ns =150 C =25 C Qrr, REVERSE RECOVERY CHARGE 2µC 1µC =150 C =25 C 0ns 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (V R =600V, I F =8A, 0µC 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (V R =600V, I F =8A, Power Semiconductors 11 Rev. 2.3 Sep 08

12 =150 C =25 C Irr, REVERSE RECOVERY CURRENT 25A 2 15A 5A =25 C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 60/µs 50/µs 40/µs 30/µs 20/µs 10/µs =150 C 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (V R =600V, I F =8A, /µs 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =600V, I F =8A, =25 C IF, FORWARD CURRENT C VF, FORWARD VOLTAGE 2,0V 1,5V 1,0V I F =15A 8A 5A 2,5A 0,5V 0V 1V 2V V F, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage 0,0V 50 C 0 C 50 C 100 C, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 12 Rev. 2.3 Sep 08

13 Soft Switching Series Power Semiconductors 13 Rev. 2.3 Sep MIN MAX MIN MAX mm Z8B M M PGTO2473

14 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =180nH and Stray capacity C σ =39pF. Power Semiconductors 14 Rev. 2.3 Sep 08

15 Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Rev. 2.3 Sep 08