IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode

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1 IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryantiparalleldiode IKWN6H3 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

2 G C E Highspeedswitchingseriesthirdgeneration IKWN6H3 HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOP TM technologyoffering verylowvcesat lowemi Verysoft,fastrecoveryantiparalleldiode maximumjunctiontemperature7 C qualifiedaccordingtojedecfortargetapplications Pbfreeleadplating;RoHScompliant completeproductspectrumandpspicemodels: Applications: uninterruptiblepowersupplies weldingconverters converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj= C Tvjmax Marking Package IKWN6H3 6V A.8V 7 C KH63 PGTO473 Rev..,43

3 Highspeedswitchingseriesthirdgeneration IKWN6H3 TableofContents Description Table of Contents Maximum ratings Thermal Resistance Electrical Characteristics Electrical Characteristics diagrams Package Drawing Testing Conditions Revision History Disclaimer Rev..,43

4 Highspeedswitchingseriesthirdgeneration IKWN6H3 Maximumratings Parameter Symbol Value Unit Collectoremittervoltage,Tvj C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC= C TC= C IC.. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls. A Turn off safe operating area VCE 6V,Tvj 7 C,tp=µs Diodeforwardcurrent,limitedbyTvjmax TC= C TC= C. A IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls. A Gateemitter voltage VGE ± V Short circuit withstand time VGE=.V,VCC 4V Allowed number of short circuits < Time between short circuits:.s Tvj= C PowerdissipationTC= C PowerdissipationTC= C tsc Ptot Operating junction temperature Tvj C Storage temperature Tstg...+ C Soldering temperature, wave soldering.6 mm (.63 in.) from case for s 6 Mounting torque, M3 screw Maximum of mounting processes: 3 A A µs W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).4 K/W Rth(jc). K/W Rth(ja) 4 K/W 4 Rev..,43

5 Highspeedswitchingseriesthirdgeneration IKWN6H3 ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=.V,IC=.A Tvj= C Tvj= C Tvj=7 C VGE=V,IF=3.A Tvj= C Tvj= C Tvj=7 C Gateemitter threshold voltage VGE(th) IC=.8mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj= C Tvj=7 C Gateemitter leakage current IGES VCE=V,VGE=V na Transconductance gfs VCE=V,IC=.A 3. S V V µa ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 96 Output capacitance Coes VCE=V,VGE=V,f=MHz 6 Reverse transfer capacitance Cres 96 Gate charge Internal emitter inductance measured mm (.97 in.) from case Short circuit collector current Max. short circuits Time between short circuits:.s QG VCC=48V,IC=.A, VGE=V pf 3. nc LE 3. nh IC(SC) VGE=.V,VCC 4V, tsc µs Tvj= C 33 A Rev..,43

6 Highspeedswitchingseriesthirdgeneration IKWN6H3 SwitchingCharacteristic,InductiveLoad Value Parameter Symbol Conditions Unit min. typ. max. IGBTCharacteristic,atTvj= C Turnon delay time td(on) Tvj= C, 3 ns Rise time VCC=4V,IC=.A, tr 37 ns VGE=./.V, Turnoff delay time td(off) rg=7.ω,lσ=9nh, 3 ns Fall time Cσ=6pF tf 4 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.4 mj Turnoff energy diode reverse recovery. Eoff.9 mj Total switching energy Ets.36 mj Diode reverse recovery time trr Tvj= C, 3 ns Diode reverse recovery charge VR=4V, Qrr.88 µc IF=3.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 6.9 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 98 A/µs SwitchingCharacteristic,InductiveLoad Value Parameter Symbol Conditions Unit min. typ. max. IGBTCharacteristic,atTvj=7 C Turnon delay time td(on) Tvj=7 C, 3 ns Rise time VCC=4V,IC=.A, tr 3 ns VGE=./.V, Turnoff delay time td(off) rg=7.ω,lσ=9nh, 73 ns Fall time Cσ=6pF tf 4 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.4 mj Turnoff energy diode reverse recovery. Eoff.3 mj Total switching energy Ets. mj Diode reverse recovery time trr Tvj=7 C, 7 ns Diode reverse recovery charge VR=4V, Qrr.4 µc IF=3.A, Diode peak reverse recovery current Irrm dif/dt=a/µs.9 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 37 A/µs 6 Rev..,43

7 Highspeedswitchingseriesthirdgeneration IKWN6H3 4 IC,COLLECTORCURRENT[A] TC=8 TC= IC,COLLECTORCURRENT[A] tp=µs µs µs µs µs µs DC TC=8 TC= f,switchingfrequency[khz] Figure. Collectorcurrentasafunctionofswitching frequency (Tj 7 C,D=.,VCE=4V,VGE=/V, rg=7ω). VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,TC= C,Tj 7 C;VGE=V) Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj 7 C) 7 7 TC,CASETEMPERATURE[ C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE V,Tj 7 C) 7 Rev..,43

8 IKWN6H3 VGE=V 7 VGE=V 7 7V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 7V V 3V V 9V 7V 7 V V 3V V 9V 7V 7 V VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Typical output characteristic (Tj= C) VCE(sat), COLLECTOREMITTER SATURATION [V] Tj= C Tj=7 C IC, COLLECTOR CURRENT [A] Figure 6. Typical output characteristic (Tj=7 C) VCE, COLLECTOREMITTER VOLTAGE [V] IC=A IC=A IC=A VGE, GATEEMITTER VOLTAGE [V] 7 7 Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical transfer characteristic (VCE=V) Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (VGE=V) 8 Rev.., 43

9 IKWN6H3 td(off) tf td(on) tr td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] IC, COLLECTOR CURRENT [A] rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of collector current (ind. load, Tj=7 C, VCE=4V, VGE=/V, rg=7ω, test circuit in Fig. E) Figure. Typical switching times as a function of gate resistor (ind. load, Tj=7 C, VCE=4V, VGE=/V, IC=A, test circuit in Fig. E) VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] t, SWITCHING TIMES [ns] 6. td(off) tf td(on) tr Tj, JUNCTION TEMPERATURE [ C] typ. min. max. 7 7 Tj, JUNCTION TEMPERATURE [ C] Figure. Typical switching times as a function of junction temperature (ind. load, VCE=4V, VGE=/V, IC=A, rg=7ω, test circuit in Fig. E) Figure. Gateemitter threshold voltage as a function of junction temperature (IC=,8mA) 9 Rev.., 43

10 IKWN6H3 8 Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 7 Eoff Eon Ets IC, COLLECTOR CURRENT [A] Figure 3. Typical switching energy losses as a function of collector current (ind. load, Tj=7 C, VCE=4V, VGE=/V, rg=7ω, test circuit in Fig. E) 8 3. Eoff Eon Ets 3.. E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 4 Figure 4. Typical switching energy losses as a function of gate resistor (ind. load, Tj=7 C, VCE=4V, VGE=/V, IC=A, test circuit in Fig. E) rg, GATE RESISTOR [Ω] Eoff Eon Ets Tj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Typical switching energy losses as a function of junction temperature (ind load, VCE=4V, VGE=/V, IC=A, rg=7ω, test circuit in Fig. E) Figure 6. Typical switching energy losses as a function of collector emitter voltage (ind. load, Tj=7 C, VGE=/V, IC=A, rg=7ω, test circuit in Fig. E) Rev.., 43

11 IKWN6H3 6 V 48V C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] Cies Coes Cres QGE, GATE CHARGE [nc] Figure 7. Typical gate charge (IC=A) 3 tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] Figure 8. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] 3 4 VGE, GATEEMITTER VOLTAGE [V] Figure 9. Typical short circuit collector current as a function of gateemitter voltage (VCE 4V, start attj= C) Figure. Short circuit withstand time as a function of gateemitter voltage (VCE 4V, start at Tj C) Rev.., 43

12 IKWN6H3 D=... ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W].... single pulse. D=..... single pulse. i: 3 4 ri[k/w]: 7.E τi[s]: 4.4E.E4 7.E4 8.3E E6 E E4... i: 3 4 ri[k/w]: τi[s]: 7.E6.E4.3E E7 tp, PULSE WIDTH [s] E E4... Figure. Diode transient thermal impedance as a function of pulse width (D=tp/T) 3 3. Tj= C, IF = A Tj=7 C, IF = A Tj= C, IF = A Tj=7 C, IF = A Qrr, REVERSE RECOVERY CHARGE [µc] trr, REVERSE RECOVERY TIME [ns] E6 tp, PULSE WIDTH [s] Figure. IGBT transient thermal impedance (D=tp/T) dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 3. Typical reverse recovery time as a function of diode current slope (VR=4V) Figure 4. Typical reverse recovery charge as a function of diode current slope (VR=4V) Rev.., 43

13 IKWN6H3 3 Tj= C, IF = A Tj=7 C, IF = A Tj= C, IF = A Tj=7 C, IF = A dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] dif/dt, DIODE CURRENT SLOPE [A/µs] 9 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure. Typical reverse recovery current as a function of diode current slope (VR=4V) Figure 6. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V).6 Tj= C Tj=7 C 9 IF=A IF=3A IF=6A.4 VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] VF, FORWARD VOLTAGE [V] 7 7 Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical diode forward current as a function of forward voltage 3 Figure 8. Typical diode forward voltage as a function of junction temperature Rev.., 43

14 IKWN6H3 PGTO473 4 Rev.., 43

15 IKWN6H3 vge(t) 9% VGE a a b b t ic(t) 9% IC 9% IC % IC % IC t vce(t) t td(off) tf td(on) t tr vge(t) 9% VGE % VGE t ic(t) % IC t vce(t) % VCE t t t3 t4 t Rev.., 43

16 IKWN6H3 Revision History IKWN6H3 Revision: 43, Rev.. Previous Revision Revision Date Subjects (major changes since last revision). 76 Preliminary datasheet. 3 New value ICES max limit at 7 C. 43 Max ratings Vce, Tvj C We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 876 Munich, Germany 876 München, Germany 4 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 Rev.., 43

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