IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
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1 Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models: Applications: Welding Motor drives PGTO2473 Type V RRM I F V F,Tj T j,max Marking Package IDW100E60 600V 100A 1.65V 175 C D100E60 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Repetitive peak reverse voltage V R R M 600 V Continuous forward current T C = 25 C T C = 90 C T C = 100 C Surge non repetitive forward current T C = 25 C, t p = 10 ms, sine halfwave Maximum repetitive forward current T C = 25 C, t p limited by t j,max, D = 0.5 Power dissipation T C = 25 C T C = 90 C T C = 100 C I F I F S M 400 A I F R M 300 A P t o t Operating junction temperature T j Storage temperature T s t g Soldering temperature 1.6mm (0.063 in.) from case for 10 s 198 T S 260 A W C IFAG IPC TD VLS 1 Rev
2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic Thermal resistance, junction case Thermal resistance, junction ambient R t h J C 0.40 K/W R t h J A 40 Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. Unit Static Characteristic Collectoremitter breakdown voltage V R R M I R=0.25mA 600 V Diode forward voltage V F I F =100A T j =25 C T j =175 C Reverse leakage current I R V R =600V T j =25 C T j =175 C A Dynamic Electrical Characteristics Diode reverse recovery time t r r T j =25 C 120 ns Diode reverse recovery charge Q r r V R =400V, 3.6 µc Diode peak reverse recovery current I r r I F =100A, 49.5 A Diode peak rate of fall of reverse recovery current during t b di r r /dt di F /dt=1200a/µs 750 A/µs Diode reverse recovery time t r r T j =125 C 168 ns Diode reverse recovery charge Q r r m V R =400V, 5.8 µc Diode peak reverse recovery current I r r I F =100A, 61.6 A Diode peak rate of fall of reverse recovery current during t b di r r /dt di F /dt=1200a/µs 705 A/µs Diode reverse recovery time t r r T j =175 C 200 ns Diode reverse recovery charge Q r r m V R =400V, 7.8 µc Diode peak reverse recovery current I r r I F =100A, 67.0 A Diode peak rate of fall of reverse recovery current during t b di r r /dt di F /dt=1200a/µs 650 A/µs IFAG IPC TD VLS 2 Rev
3 350W 150A Ptot, POWER DISSIPATION 300W 250W 200W 150W 100W IF, FORWARD CURRENT 120A 90A 60A 30A 50W 0W 25 C 50 C 75 C 100 C 125 C 150 C 0A 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 1. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 2. Diode forward current as a function of case temperature (T j 175 C) 250A 2.0V I F =200A 175 C IF, FORWARD CURRENT 200A 150A 100A 50A VF, FORWARD VOLTAGE 1.5V 1.0V 0.5V 100A 50A 0A 0V 1V 2V 0.0V 0 C 50 C 100 C 150 C V F, FORWARD VOLTAGE Figure 3. Typical diode forward current as a function of forward voltage, JUNCTION TEMPERATURE Figure 4. Typical diode forward voltage as a function of junction temperature IFAG IPC TD VLS 3 Rev
4 trr, REVERSE RECOVERY TIME 200ns 150ns 100ns 50ns Qrr, REVERSE RECOVERY CHARGE 8µC 7µC 6µC 5µC 4µC 3µC 2µC 1µC 0ns Figure 5. Typical reverse recovery time as a function of diode current slope (V R =400V, I F =100A, 0µC Figure 6. Typical reverse recovery charge as a function of diode current slope (V R = 400V, I F = 100A, 70A 1200A/µs Irr, REVERSE RECOVERY CURRENT 60A 50A 40A 30A 20A 10A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 1000A/µs 800A/µs 600A/µs 400A/µs 200A/µs 0A Figure 7. Typical reverse recovery current as a function of diode current slope (V R = 400V, I F = 100A, 0A/µs Figure 8. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =400V, I F =100A, IFAG IPC TD VLS 4 Rev
5 ZthJC, TRANSIENT THERMAL IMPEDANCE 10 1 K/W 10 2 K/W D= single pulse R, ( K / W ), ( s ) E E E5 R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 1µs 10µs 100µs 1ms 10ms 100ms 1s t P, PULSE WIDTH Figure 9. Diode transient thermal impedance as a function of pulse width (D=t P /T) IFAG IPC TD VLS 5 Rev
6 IFAG IPC TD VLS 6 Rev
7 Published by Infineon Technologies AG Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 7 Rev
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Low Drop Voltage Regulator TLE 4266-2 Features Fixed output voltage 5. V or 3.3 V Output voltage tolerance ±2%, ±3% 15 ma current capability Very low current consumption Low-drop voltage Overtemperature
IR MOSFET StrongIRFET IRF60R217
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
600V Super-Junction Power MOSFET
600V Super-Junction Power MOSFET FEATURES l Very low FOM R DS(on) Q g l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power
STTH1003S. High efficiency rectifier. Description. Features
High efficiency rectifier Datasheet - production data Description The STTH1003S is an ultrafast recovery power rectifier dedicated to energy recovery in PDP applications. It is especially designed for
STTH512. Ultrafast recovery V diode. Description. Features
Ultrafast recovery - 1200 V diode Datasheet - production data Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and
650V N-Channel MOSFET
TMA12N65H, TMP12N65H 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power
TLE4916-1K. Datasheet. Sense & Control. Low Power Automotive Hall Switch. Rev.1.0,
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HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKYNCS Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBTinTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: VTRENCHSTOP TM IGBTtechnologyoffering:
BCR401R LED Driver Features Applications General Description
LED Driver Features LED drive current of ma Output current adjustable up to 60mA with external resistor Supply voltage up to 8V Easy paralleling of drivers to increase current Low voltage overhead of.v
TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L
IGBT TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical
Dual Low Drop Voltage Regulator TLE 4476
Dual Low Drop oltage Regulator TLE 4476 Features Output 1: 350 ma; 3.3 ± 4% Output 2: 430 ma; 5.0 ± 4% Enable input for output 2 Low quiescent current in OFF state Wide operation range: up to 42 Reverse
AUIRFR4105Z AUIRFU4105Z
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
IRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
AUIRLS3034 AUTOMOTIVE GRADE. HEXFET Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3
BCR... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = kω, R = kω) BCRS: Two internally isolated transistors with good matching
TRENCHSTOP TM IGBT4 Low Power Chip IGC99T120T8RL
IGBT TRENCHSTOP TM IGBT4 Low Power Chip IGC99T120T8RL Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical
IR MOSFET StrongIRFET IRFP7718PbF
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
TRENCHSTOP TM IGBT4 Medium Power Chip IGC142T120T8RM
IGBT TRNCHSTOP TM IGBT4 Medium Power Chip IGC142T120T8RM Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and
HITFET BTS3800SL. Datasheet. Automotive. Smart Low Side Power Switch. Small Protected Automotive Relay Driver Single Channel, 800mΩ
HITFET Smart Low Side Power Switch BTS3800SL Small Protected Automotive Relay Driver Single Channel, 800mΩ Datasheet Rev. 1.1, 2011-04-30 Automotive 1 Overview.......................................................................
IGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl
IGBT HighspeedIGBTinTrenchandFieldstoptechnology 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology
AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package
HiRel K-Band GaAs Super Low Noise HEMT HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20
BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V
BCRU LED Driver Features LED drive current of Output current adjustable up to 5 with external resistor 5 3 Supply voltage up to V Easy paralleling of drivers to increase current Low voltage overhead of.v