InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl

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1 InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHWNR Datasheet IndustrialPowerControl

2 IHWNR Reverse conducting IGBT with monolithic body diode Features: C Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers: very tight parameter distribution high ruggedness, temperature stable behavior low VCEsat easy parallel switching capability due to positive temperature coefficient in VCEsat Low EMI Qualified according to JESD for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models: G E Applications: G Inductive cooking C E Key Performance and Package Parameters Type IHWNR VCE IC VCEsat, Tvj=5 C Tvjmax Marking Package V A.48V 75 C HR PGTO47 Rev..5,

3 IHWNR Table of Contents Description Table of Contents Maximum ratings Thermal Resistance Electrical Characteristics Electrical Characteristics diagrams Package Drawing Testing Conditions Revision History Disclaimer Rev..5,

4 IHWNR Maximum ratings Parameter Symbol Value Unit Collectoremitter voltage VCE V DC collector current, limited by Tvjmax TC = 5 C TC = C IC 4.. A Pulsed collector current, tp limited by Tvjmax ICpuls 6. A Turn off safe operating area VCE V, Tvj 75 C 6. A Diode forward current, limited by Tvjmax TC = 5 C TC = C IF 4.. A Diode pulsed current, tp limited by Tvjmax IFpuls 6. A Gateemitter voltage Transient Gateemitter voltage (tp µs, D <.) VGE ± ±5 V Power dissipation TC = 5 C Power dissipation TC = C Ptot. 55. W Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering.6 mm (.6 in.) from case for s C 6 Mounting torque, M screw Maximum of mounting processes: M.6 Nm Thermal Resistance Parameter Characteristic Symbol Conditions Max. Value Unit IGBT thermal resistance, junction case Rth(jc).48 K/W Diode thermal resistance, junction case Rth(jc).48 K/W Thermal resistance junction ambient Rth(ja) 4 K/W 4 Rev..5,

5 IHWNR Electrical Characteristic, at Tvj = 5 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. VGE = 5.V, IC =.A Tvj = 5 C Tvj = 5 C Tvj = 75 C Unit Static Characteristic Collectoremitter breakdown voltage V(BR)CES VGE = V, IC =.5mA Collectoremitter saturation voltage VCEsat V V Diode forward voltage VF VGE = V, IF =.A Tvj = 5 C Tvj = 5 C Tvj = 75 C Gateemitter threshold voltage VGE(th) IC =.5mA, VCE = VGE Zero gate voltage collector current ICES VCE = V, VGE = V Tvj = 5 C Tvj = 75 C Gateemitter leakage current IGES VCE = V, VGE = V na Transconductance gfs VCE = V, IC =.A 8. S Integrated gate resistor rg V V. µa 5. Ω none Electrical Characteristic, at Tvj = 5 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max nc. nh Dynamic Characteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (.97 in.) from case LE VCE = 5V, VGE = V, f = MHz VCC = 96V, IC =.A, VGE = 5V pf Switching Characteristic, Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. 87 ns 5 ns.95 mj IGBT Characteristic, at Tvj = 5 C Turnoff delay time td(off) Fall time tf Turnoff energy Eoff Tvj = 5 C, VCC = 6V, IC =.A, VGE =./5.V, rg = 5.Ω, Lσ = 8nH, Cσ = 9pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 5 Rev..5,

6 IHWNR Switching Characteristic, Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. 454 ns 84 ns.65 mj IGBT Characteristic, at Tvj = 75 C Turnoff delay time td(off) Fall time tf Turnoff energy Eoff Tvj = 75 C, VCC = 6V, IC =.A, VGE =./5.V, rg = 5.Ω, Lσ = 8nH, Cσ = 9pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 6 Rev..5,

7 IHWNR 6 TC=8 4 TC=.. tp=µs µs µs ms ms DC. 5µs f, SWITCHING FREQUENCY [khz] VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Collector current as a function of switching frequency (Tj 75 C, D=.5, VCE=6V, VGE=5/V, rg=5ω) Figure. Forward bias safe operating area (D=, TC=5 C, Tj 75 C; VGE=5V) 5 Ptot, POWER DISSIPATION [W] TC, CASE TEMPERATURE [ C] TC, CASE TEMPERATURE [ C] Figure. Power dissipation as a function of case temperature (Tj 75 C) Figure 4. Collector current as a function of case temperature (VGE 5V, Tj 75 C) 7 Rev..5,

8 IHWNR 6 6 VGE=V VGE=V 5 7V 5 5V 4 V V 9V 7V 5V 7V 5V 4 V V 9V 7V 5V VCE, COLLECTOREMITTER VOLTAGE [V] 4 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical output characteristic (Tj=5 C) Figure 6. Typical output characteristic (Tj=75 C). VCE(sat), COLLECTOREMITTER SATURATION [V] Tj=5 C Tj=75 C IC=A IC=A IC=4A VGE, GATEEMITTER VOLTAGE [V] Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical transfer characteristic (VCE=V) Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (VGE=5V) 8 Rev..5,

9 IHWNR td(off) tf td(off) tf t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 4 Figure 9. Typical switching times as a function of collector current (ind. load, Tj=75 C, VCE=6V, VGE=5/V, rg=5ω, test circuit in Fig. E) t, SWITCHING TIMES [ns] Figure. Typical switching times as a function of gate resistor (ind. load, Tj=75 C, VCE=6V, VGE=5/V, IC=A, test circuit in Fig. E) VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] td(off) tf rg, GATE RESISTOR [Ω] Tj, JUNCTION TEMPERATURE [ C] typ. min. max Tj, JUNCTION TEMPERATURE [ C] Figure. Typical switching times as a function of junction temperature (ind. load, VCE=6V, VGE=5/V, IC=A, rg=5ω, test circuit in Fig. E) Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.5mA) 9 Rev..5,

10 IHWNR Eoff Eoff E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 4 Figure. Typical switching energy losses as a function of collector current (ind. load, Tj=75 C, VCE=6V, VGE=5/V, rg=5ω, test circuit in Fig. E) 5. Eoff E, SWITCHING ENERGY LOSSES [mj] Eoff E, SWITCHING ENERGY LOSSES [mj] 4 Figure 4. Typical switching energy losses as a function of gate resistor (ind. load, Tj=75 C, VCE=6V, VGE=5/V, test circuit in Fig. E) rg, GATE RESISTOR [Ω] Tj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical switching energy losses as a function of junction temperature (ind load, VCE=6V, VGE=5/V, IC=A, rg=5ω, test circuit in Fig. E) Figure 6. Typical switching energy losses as a function of collector emitter voltage (ind. load, Tj=75 C, VGE=5/V, IC=A, rg=5ω, test circuit in Fig. E) Rev..5,

11 IHWNR 5. 4V 96V C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] Ciss Coss Crss QGE, GATE CHARGE [nc] Figure 8. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] D= single pulse. D=.5. E5 E single pulse. i: ri[k/w]: 9.8E τi[s]:.8e5 4.7E5.E4.E 9.9E E6 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 7. Typical gate charge (IC=A) ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] i: ri[k/w]: 9.8E τi[s]:.8e5 4.7E5.E4.E 9.9E E6 tp, PULSE WIDTH [s] E5 E4... tp, PULSE WIDTH [s] Figure 9. IGBT transient thermal impedance (D=tp/T) Figure. Diode transient thermal impedance as a function of pulse width (D=tp/T) Rev..5,

12 IHWNR 4 IC=A IC=A IC=4A VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] Tj=5 C Tj=75 C VF, FORWARD VOLTAGE [V] Tj, JUNCTION TEMPERATURE [ C] Figure. Typical diode forward current as a function of forward voltage Figure. Typical diode forward voltage as a function of junction temperature Rev..5,

13 IHWNR PGTO47 Rev..5,

14 IHWNR a a b b t 4 Rev..5,

15 IHWNR Revision History IHWNR Revision:, Rev..5 Previous Revision Revision Date Subjects (major changes since last revision) Layout change We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 876 Munich, Germany 876 München, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 Rev..5,