SUSPM TM DEC LVH200G1201_Preliminary LVH200G1201Z*_Preliminary. SUSPM X 48.5 X 30 mm. 1200V 200A 2-Pack IGBT Module. Features.

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1 DEC 211 LVH2G121_Preliminary LVH2G121Z*_Preliminary SUSPM TM 12V 2A 2-Pack IGBT Module Features Soft Punch Through IGBT(SPT+ IGBT) - Low saturation voltage - Positive temperature coefficient - Fast Switching - High ruggedness Free wheeling diodes with fast and soft reverse recovery Industrial standard package with copper base plate 1us Short circuit rated Included gate surge protection function Application Welder Power Supply Industrial Motor Drive SUSPM X 48.5 X 3 mm Absolute Maximum Ratings T C = 25C unless otherwise noted Item Symbol Condition Value Units V CES 12 V V GES ± 2 V I C = 25 C A C C = 8 C 2 A IGBT I CM C = 25 C, t p =1ms A T sc j = 125 C, V CC = 6V, V GE = 15V 1 us T j Operating Junction Temperature -4 to C P C = 25 C 1786 W D C = 8 C 1 W V RRM 12 V I C = 25 C A F C = 8 C 2 A I FRM C = 25 C, t p =1ms A Inverse Diode I C = 25 C, t p =1ms, Sine A FSM C = 125 C, t p =1ms, Sine A T j Operating Junction Temperature -4 to C P C = 25 C 833 W D C = 8 C 467 W T stg Storage Temperature -4 to C V 1minute 25 V Module M t Main Terminal Mounting torque( M6) 2.5 ~ 5. Nm M s Heat sink Mounting torque(m6) 3. ~ 5. Nm W Weight 24 g Internal Circuit & Pin Description Pin Number Pin Name Pin Description 1 C2E1 Output 2 E2 Negative DC Link Ouput 3 C1 Positive DC Link Ouput 4 G1 Gate Input for High-side 5 E1 Emitter Input for High-side 6 G2 Gate Input for Low-side 7 E2 Emitter Input for Low-side 211 LS Industrial Systems, Preliminary REV.2 *Option : Zener Diode between Gate and Emitter

2 Electrical Characteristics of IGBT T C = 25C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES C-E Breakdown Voltage V GE = V, I C = 25uA V I CES Collector Cut-Off Current V CE = V CES, V GE = V ma I GES G-E Leakage Current V GE = V GES, V CE = V -2-2 na On Characteristics V GE(th) G-E Threshold Voltage V GE = V CE, I C =2mA V V CE(sat) Collector to Emitter I C =2A, V GE = 15V, T c =25C V Saturation Voltage I C =2A, V GE = 15V, T c =125C V Dynamic Characteristics C ies Input Capacitance - - nf V CE = 25V, V GE = V, C oes Output Capacitance - - nf f = 1MHz, Tc=25C C res Reverse Transfer Capacitance - - nf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns Tc=25C,R G =5 Ohm t d(off) Turn-Off Delay Time ns L=1 uh, V DC =6V t f Fall Time ns V GE =15V ~ -15V E on Turn-On Switching Loss Ic=2A mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate Charge - - nc Q ge Gate-Emitter Charge V GE =V ~ +15V - - nc Q gc Gate-Collector Charge - - nc Electrical Characteristics of Inverse Diode T C = 25C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V F Diode Forward Voltage I F =2A, V GE =V T C = 25C T C = 125C V t rr Diode Reverse Recovery Time ns I RRM Diode Peak Reverse Recovery Current A Q rr Diode Reverse Recovery Charge uc E rr Diode Reverse Recovery Energy mj Thermal Characteristics Symbol Parameter Min Typ. Max. Units R th(j-c) Junction-to-Case (IGBT Part) W R th(j-c)d Junction-to-Case (Diode Part) W 211 LS Industrial Systems, Preliminary REV.2 *Option : Zener Diode between Gate and Emitter

3 3 2V 18V 15V 12V 3 2V 18V 15V 12V 2 1 VGE=1V 2 1 VGE=1V Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 4 VGE=15V Diode Forward Current, IF [A] Diode Forward Voltage, VF [V] Fig 3. Typical Transfer Characteristics Fig 4. Typical Diode Forward Characteristics Switching Time, t[ns] tdoff tf tdon tr, VCC=6V RG=5Ohm L=1uH Switching Energy Loss, E[mJ] Tc=25C, VCC=6V RG=1 Ohm L=1 uh Eoff Eon Fig 5. Typical Switching Time vs Collector Current Fig 6. Typical Switching Loss vs Collector Current 211 LS Industrial Systems, Preliminary REV.2 *Option : Zener Diode between Gate and Emitter

4 Switching Time, t[ns] 1 4, VCC=6V Ic=2A, L=1 uh tdoff tdon tr tf Switching Energy Loss, E[mJ] , VCC=6V Ic=2A, L=1 uh Eon Eoff Gate Resistor, RG[ohm] Gate Resistor, RG[ohm] Fig 7. Typical Switching Time vs Gate Resistor Fig 8. Typical Switching Loss vs Gate Resistor 211 LS Industrial Systems, Preliminary REV.2 *Option : Zener Diode between Gate and Emitter

5 Package Dimension (dimensions in mm) LS Industrial Systems, Preliminary REV.2 *Option : Zener Diode between Gate and Emitter