HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode

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1 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C VTRENCHSTOP TM IGBT6technologyoffering: Highefficiencyinhardswitchingandresonanttopologies Easyparallelingcapabilityduetopositivetemperature coefficientinvcesat LowEMI LowGateChargeQg Verysoft,fastrecoveryfullcurrentantiparalleldiode Maximumjunctiontemperature75 C Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: G E Applications: IndustrialUPS Charger Energystorage ThreelevelSolarStringInverter Welding G C E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec7// KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=5 C Tvjmax Marking Package IKWNCS6 V A.85V 75 C KMCS6 PGTO73 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V.

2 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer V.

3 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 5 C VCE V DCcollectorcurrent,limitedbyTvjmax Tc=5 C Tc= C IC 8.. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 6. A TurnoffsafeoperatingareaVCE V,Tvj 75 C 6. A Diodeforwardcurrent,limitedbyTvjmax Tc=5 C Tc= C IF 8.. Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 6. A Gateemitter voltage TransientGateemittervoltage(tp.5µs,D<.) Short circuit withstand time VGE=5.V,VCC 5V Allowed number of short circuits < Time between short circuits:.s Tvj=5 C PowerdissipationTc=5 C PowerdissipationTc= C VGE tsc Ptot ± Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering.6mm (.63in.) from case for s 6 Mounting torque, M3 screw Maximum of mounting processes: 3 A A V µs W C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).3 K/W Rth(jc).78 K/W Rth(ja) K/W 3 V.

4 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries ElectricalCharacteristic,atTvj=5 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=.A Tvj=5 C Tvj=5 C Tvj=75 C VGE=V,IF=.A Tvj=5 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.9mA,VCE=VGE V Zero gate voltage collector current ICES VCE=V,VGE=V Tvj=5 C Tvj=75 C Gateemitter leakage current IGES VCE=V,VGE=V 6 na Transconductance gfs VCE=V,IC=.A 3. S V V µa ElectricalCharacteristic,atTvj=5 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 7 Output capacitance Coes VCE=5V,VGE=V,f=MHz 85 Reverse transfer capacitance Cres Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=96V,IC=.A, VGE=5V pf 85. nc LE 3. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=5 C Turnon delay time td(on) Tvj=5 C, 7 ns Rise time VCC=6V,IC=.A, tr 39 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=9.Ω,RG(off)=9.Ω, 35 ns Fall time Lσ=7nH,Cσ=67pF tf 7 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.55 mj Turnoff energy Eoff diode reverse recovery..55 mj Total switching energy Ets. mj V.

5 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries DiodeCharacteristic,atTvj=5 C Diode reverse recovery time trr Tvj=5 C, ns Diode reverse recovery charge VR=6V, Qrr.65 µc IF=.A, Diode peak reverse recovery current Irrm dif/dt=7a/µs, 8. A Diode peak rate of fall of reverse Lσ=7nH, dirr/dt Cσ=67pF 65 A/µs recoverycurrentduringtb SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=75 C Turnon delay time td(on) Tvj=75 C, 7 ns Rise time VCC=6V,IC=.A, tr 38 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=9.Ω,RG(off)=9.Ω, 39 ns Fall time Lσ=7nH,Cσ=67pF tf 55 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 3.5 mj Turnoff energy Eoff diode reverse recovery..95 mj Total switching energy Ets 6.5 mj DiodeCharacteristic,atTvj=75 C Diode reverse recovery time trr Tvj=75 C, 7 ns Diode reverse recovery charge VR=6V, Qrr 6. µc IF=.A, Diode peak reverse recovery current Irrm dif/dt=8a/µs, 7. A Diode peak rate of fall of reverse Lσ=7nH, dirr/dt Cσ=67pF 7 A/µs recoverycurrentduringtb 5 V.

6 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries not for linear use 6 VGE=V 7V 5V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 6 3V V 9V 7V. VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,Tvj 75 C;VGE=5V,pulsewidth limitedbytvjmax) 3 5 VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Typicaloutputcharacteristic (Tvj=5 C) 6 VGE=V 7V 6 Tvj = 5 C Tvj = 75 C 5V IC,COLLECTORCURRENT[A] 8 6 3V V 9V 7V IC,COLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=75 C) 6 8 VGE,GATEEMITTERVOLTAGE[V] Figure. Typicaltransfercharacteristic (VCE=V) 6 V.

7 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries VCEsat,COLLECTOREMITTERSATURATION[V] IC = A IC = A IC = 8A t,switchingtimes[ns] td(off) tf td(on) tr Tvj,JUNCTIONTEMPERATURE[ C] Figure 5. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) IC,COLLECTORCURRENT[A] Figure 6. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,RG=9Ω,Dynamictestcircuitin Figure E) td(off) tf td(on) tr t,switchingtimes[ns] t,switchingtimes[ns] td(off) tf td(on) tr RG,GATERESISTOR[Ω] Figure 7. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,IC=A,Dynamictestcircuitin Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=6v,vge=/5v, IC=A,RG=9Ω,DynamictestcircuitinFigure Figure E) 7 E) V.

8 IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max. E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets Tvj,JUNCTIONTEMPERATURE[ C] Figure 9. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=.9mA) IC,COLLECTORCURRENT[A] Figure. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,RG=9Ω,Dynamictestcircuitin Figure E) 7 Eoff Eoff Eon Eon Ets 6 Ets E,SWITCHINGENERGYLOSSES[mJ] 8 6 E,SWITCHINGENERGYLOSSES[mJ] RG,GATERESISTOR[Ω] Figure. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,IC=A,Dynamictestcircuitin Tvj,JUNCTIONTEMPERATURE[ C] Figure. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=6v,vge=/5v, IC=A,RG=9Ω,Dynamictestcircuitin Figure E) 8 Figure E) V.

9 IKWNCS6 Sixth generation, high speed soft switching series 9 Eoff Eon Ets 8 Tvj = 5 C Tvj = 75 C dif/dt, DIODE CURRENT SLOPE [A/µs] E, SWITCHING ENERGY LOSSES [mj] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj=75 C, VGE=/5V, IC=A, RG=9Ω, Dynamic test circuit in Figure E) Figure. Typical diode current slope as a function of gate resistor (inductive load, VCE=6V, VGE=/5V, IC=A, Dynamic test circuit in Figure E) 6 E+ VCC = V VCC = 96V Cies Coes Cres C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] 5 RG, GATE RESISTOR [Ω] QGE, GATE CHARGE [nc] Figure 5. Typical gate charge (IC=A) VCE, COLLECTOREMITTER VOLTAGE [V] Figure 6. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) 9 V.

10 IKWNCS6 Sixth generation, high speed soft switching series tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] VGE, GATEEMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure 7. Typical short circuit collector current as a function of gateemitter voltage (VCE 5V, Tvj 75 C) Figure 8. Short circuit withstand time as a function of gateemitter voltage (VCE 5V, start at Tvj 75 C) Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W]. D = single pulse. D = single pulse. i: ri[k/w]: 9.E E3.6E3 τi[s]:.5e5 3.E 3.E E E6 E5 E... i: 3 5 ri[k/w]: e3 τi[s]: 3.E.8E E E6 tp, PULSE WIDTH [s] Figure 9. IGBT transient thermal resistance (D=tp/T) E5 E... tp, PULSE WIDTH [s] Figure. Diode transient thermal impedance as a function of pulse width (D=tp/T) V.

11 IKWNCS6 Sixth generation, high speed soft switching series Tvj = 5 C, IF = A Tvj = 75 C, IF = A Tvj = 5 C, IF = A Tvj = 75 C, IF = A 7 Qrr, REVERSE RECOVERY CHARGE [µc] trr, REVERSE RECOVERY TIME [ns] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure. Typical reverse recovery time as a function of diode current slope (VR=6V) 6 8 Figure. Typical reverse recovery charge as a function of diode current slope (VR=6V) 3 Tvj = 5 C, IF = A Tvj = 75 C, IF = A dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] dif/dt, DIODE CURRENT SLOPE [A/µs] 5 5 Tvj = 5 C, IF = A Tvj = 75 C, IF = A dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 3. Typical reverse recovery current as a function of diode current slope (VR=6V) 6 8 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=6V) V.

12 IKWNCS6 Sixth generation, high speed soft switching series. 6 Tvj = 5 C Tvj = 75 C IF, FORWARD CURRENT [A] Erec, SWITCHING ENERGY LOSSES [mj] Tj=5 C, IF = A Tj=75 C, IF = A dif/dt, DIODE CURRENT SLOPE [A/µs] 3 5 VF, FORWARD VOLTAGE [V] Figure 5. Typical reverse energy losses as a function of diode current slope (VR=6V) Figure 6. Typical diode forward current as a function of forward voltage 3.5 IF = A IF = A IF = 8A VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure 7. Typical diode forward voltage as a function of junction temperature V.

13 IKWNCS6 Sixth generation, high speed soft switching series Package Drawing PGTO73 3 V.

14 IKWNCS6 Sixth generation, high speed soft switching series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC % IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t E off = t VCE x IC x dt E t t on = VCE x IC x d t % VCE t3 t t3 t t Figure B. V.

15 IKWNCS6 Sixth generation, high speed soft switching series Revision History IKWNCS6 Revision:, Rev.. Previous Revision Revision Date Subjects (major changes since last revision). Final data sheet 5 V.

16 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 8. All Rights Reserved. Important Notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( Please note that this product is not qualified according to the AEC Q or AEC Q documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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